2SB644
Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 2.5±0.1 Parameter Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to
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2sb06432sb06442sb6432sb644+42sd06382sd6382sd06392sd639
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2sb644
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings
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2sd06382sd06392sd6382sd639+42sb06432sb6432sb06442sb644
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2sb644
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to 2SD0638
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2sd06382sd06392sd6382sd639+42sb06432sb6432sb06442sb644
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2SB644
Abstract: 2SB0643 2SB0644 2SB643
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) 2SB0643 Collector-base voltage (Emitter open) 2SB0644 Collector-emitter voltage 2SB0643 (Base open)
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2SB644
Abstract: transistor 2sd638 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639 transistor 2sb643
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) M Di ain sc te on na tin nc ue e/ d Unit: mm 2.5±0.1 Parameter Symbol Collector to
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2sd06382sd06392sd6382sd639+62sb06432sb6432sb06442sb644transistor 2sd638transistor 2sb643
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2SB644
Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to
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2sd06382sd06392sd6382sd639+42sb06432sb6432sb06442sb644
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2SB644
Abstract: 2SB0643 2SB0644 2SB643
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 Symbol Rating Unit VCBO −30 V (0.85) −60 2SB0644 Collector-emitter voltage 2SB0643 (Base open)
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2SB644
Abstract: 2SD0638 2SB0643 2SB0644 2SB643 2SD0639 2SD638 2SD639 transistor 2sb643 transistor 2sd638
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 6.9±0.1 Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to 2SB0643
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2sb06432sb06442sb6432sb644+62sd06382sd6382sd06392sd639transistor 2sb643transistor 2sd638
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2SB644
Abstract: transistor 2sb643 2SB643 2sd638 2SD639 2sb643 complementary
Contextual Info: Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 Unit: mm 6.9±0.1 Symbol Collector to 2SB643 base voltage 2SB644 Collector to 2SB643 Ratings –30 VCBO –60 VCEO emitter voltage 2SB644
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2sb6432sb6442sd6382sd639+2transistor 2sb6432sb643 complementary
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2SB0643
Abstract: 2SB0644 2SB643 2SB644
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.5) Unit −30 V Emitter-base voltage (Collector open) VEBO Peak collector current Collector power dissipation Junction temperature
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2sb644
Abstract: 2SD639
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 • Absolute Maximum Ratings Ta = 25°C 2SB0643 Collector to emitter voltage 2SB0643 Symbol Rating Unit VCBO −30 V −60
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2SB644
Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 • Absolute Maximum Ratings Ta = 25°C 2SB0643 Collector to emitter voltage 2SB0643 Symbol Rating Unit VCBO −30 V −60
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2SB0643
Abstract: 2SB0644 2SB643 2SB644 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings
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2sb644
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 VEBO
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SD588
Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*
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000-5a2sd5602sd57115khz+162sd5862sd7182sd7262sd7272sd7282sd7312sd5882sb6512sb669a2sb618a2sb6412sb6152sb6692sd588a2sb6182sb616 2sd586
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3sk241t0220fk 2411k2411+8ix 3354a699a3sk24112sa1950t092l2sb07743sk271c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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o-1262sc22582sc30632sc5340+10o-202t0-220o-220f2sc29232sc47142sc39422sb07742sa20042sb1602sb642
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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t0-92t092lt0220ft0220+10t092nla1534t0922sb6422sb0774ss-mini 32sa14952sb9462sa1124a1534a
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2SB641 r
Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
Contextual Info: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #
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2sb6032sb6052sb6212sb621a+152sb6242sb631-0b6482sd668ao-1262sb648a2sb641 r2sb6412sd6592sd6892sb6782sb647b2sb646a2sb6462sb686
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2sc46092sc48082sa18062sc4627+162sa17902sc46262sc46552sd23452sc4612sa1d1276ab1419d638 transistorb1361ic 1271ad1273d1985ab947ab11781985a
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2SD636 R
Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b
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2sd5262sd5452sd5522sd553+162sd5602sd5682sd5692sd5712sb639h2sd629h2sd636 r2sd6362sb6152sd650h2sb6132sd5112sd6462sd6372sb6312sd601
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