2SB160 Search Results

2SB1607

Abstract: 2SD2469
Contextual Info: Inchange Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Complement to type 2SD2469 APPLICATIONS ・For power switching applications

2SB1606

Contextual Info: SavantIC Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Good linearity of hFE APPLICATIONS ·For power switching applications PINNING

2SB1603

Abstract: 2SB1603A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

2SB1604

Abstract: 2SB1604A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1604 2SB1604A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

Contextual Info: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)

2SB1602

Abstract: 2SD2462
Contextual Info: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602

220E

Abstract: 2SB1607 2SD2469
Contextual Info: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

220E

Abstract: 2SB1605 2SB1605A
Contextual Info: Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification • Features Parameter Collector to base voltage 2SB1605A Collector to 2SB1605 Ratings –60 VCBO –80 –60 VCEO emitter voltage 2SB1605A –80 Unit

220E

Abstract: 2SB1606
Contextual Info: Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage

D2462

Abstract: 2SB1602 2SD2462
Contextual Info: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602

Contextual Info: 2SB1602 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIO NS • • U n it in mm High DC Current Gain : hFE = 300-1000 (V c e = - 5 V , I c = -0 .5 A ) Low Collector Saturation Voltage. : v C E(sat)= —0.4V (Typ.) ( Iq = —1A, lB = -1 0 m A )

PNP 100V 2A

Abstract: 2SB1606
Contextual Info: Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Good linearity of hFE APPLICATIONS ・For power switching applications

2SB1602

Abstract: 2SD2462
Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

d2462

Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •

Contextual Info: TO SHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; hjrg i = 300~ 1000 Low Collector Saturation Voltage : v CE(sat)= -0.5V (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features 4.6±0.2 Low collector to emitter saturation voltage VCE sat High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Contextual Info: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB1602

Abstract: 2SD2462
Contextual Info: TOSHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : ^FE 1 = 300~1000 Low Collector Saturation Voltage : VCE (sat)“ —0.5y (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)

220E

Abstract: 2SB1603 2SB1603A
Contextual Info: Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SB1603 base voltage 2SB1603A Collector to 2SB1603 Ratings –40 VCBO –50 –20

Contextual Info: TOSHIBA 2SB1602 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 6 Q2 High DC Current Gain : ^FE 1 = 300—1000 Low Collector Saturation Voltage • VCE (sat)= —0-5V (Typ.) Complementary to 2SD2462 • •

2SD2469

Abstract: 2SB1607
Contextual Info: SavantIC Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications

2SB1605

Abstract: 2SB1605A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

Contextual Info: Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features 4.6±0.2 Low collector to emitter saturation voltage VCE sat High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw