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    2SB160 Search Results

    2SB160 Datasheets (41)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SB160
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 36.65KB 1
    2SB160
    Unknown The Japanese Transistor Manual 1981 Scan PDF 106.88KB 2
    2SB160
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 184.45KB 2
    2SB160
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.31KB 1
    2SB160
    Unknown Vintage Transistor Datasheets Scan PDF 48.29KB 1
    2SB160
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.87KB 1
    2SB160
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.2KB 1
    2SB1600
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.84KB 1
    2SB1601
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.84KB 1
    2SB1602
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.23KB 1
    2SB1602
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.84KB 1
    2SB1602
    Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF 209.85KB 4
    2SB1602
    Toshiba TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Scan PDF 190.45KB 3
    2SB1602
    Toshiba PNP transistor Scan PDF 209.85KB 4
    2SB1603
    Panasonic Silicon PNP epitaxial planar type Original PDF 53.91KB 3
    2SB1603
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.23KB 1
    2SB1603
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.84KB 1
    2SB1603
    Panasonic Silicon Medium Power Transistors Scan PDF 108.94KB 1
    2SB1603A
    Panasonic Silicon PNP epitaxial planar type Original PDF 53.91KB 3
    2SB1603A
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.23KB 1
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    2SB160 Price and Stock

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    nVent ERIFLEX 561162 (SB160AL)

    POWER BLOCK, 1 LINE, 1 LOAD CONNECTIONS, 200A, UL, TINNED ALUMINUM, SB SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 561162 (SB160AL) Bulk 46 1
    • 1 $37.22
    • 10 $31.08
    • 100 $31.08
    • 1000 $31.08
    • 10000 $31.08
    Buy Now

    KYOCERA Corporation CX5032SB16000D0DPJ01

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA CX5032SB16000D0DPJ01 1,000
    • 1 -
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    2SB160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1607

    Abstract: 2SD2469
    Contextual Info: Inchange Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Complement to type 2SD2469 APPLICATIONS ・For power switching applications


    Original
    2sb1607o-220f2sd246910mhz PDF

    2SB1606

    Contextual Info: SavantIC Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Good linearity of hFE APPLICATIONS ·For power switching applications PINNING


    Original
    2sb1606o-220f10mhz PDF

    2SB1603

    Abstract: 2SB1603A
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION


    Original
    2sb16032sb1603ao-220f PDF

    2SB1604

    Abstract: 2SB1604A
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1604 2SB1604A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION


    Original
    2sb16042sb1604ao-220f PDF

    Contextual Info: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2sd24622sb1602 PDF

    2SB1602

    Abstract: 2SD2462
    Contextual Info: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602


    OCR Scan
    2sd24622sb1602 PDF

    220E

    Abstract: 2SB1607 2SD2469
    Contextual Info: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original
    2sb16072sd2469220e PDF

    220E

    Abstract: 2SB1605 2SB1605A
    Contextual Info: Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification • Features Parameter Collector to base voltage 2SB1605A Collector to 2SB1605 Ratings –60 VCBO –80 –60 VCEO emitter voltage 2SB1605A –80 Unit


    Original
    2sb16052sb1605a220e PDF

    220E

    Abstract: 2SB1606
    Contextual Info: Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage


    Original
    2sb1606120ma220e PDF

    D2462

    Abstract: 2SB1602 2SD2462
    Contextual Info: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602


    Original
    2sd24622sb1602d2462 PDF

    Contextual Info: 2SB1602 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIO NS • • U n it in mm High DC Current Gain : hFE = 300-1000 (V c e = - 5 V , I c = -0 .5 A ) Low Collector Saturation Voltage. : v C E(sat)= —0.4V (Typ.) ( Iq = —1A, lB = -1 0 m A )


    OCR Scan
    2sb1602--60v--10ma--10v PDF

    PNP 100V 2A

    Abstract: 2SB1606
    Contextual Info: Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Good linearity of hFE APPLICATIONS ・For power switching applications


    Original
    2sb1606o-220f10mhzpnp 100v 2a PDF

    2SB1602

    Abstract: 2SD2462
    Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2sd24622sb1602 PDF

    Contextual Info: Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original
    2sb1606 PDF

    d2462

    Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •


    OCR Scan
    2sd24622sb1602d2462 PDF

    Contextual Info: TO SHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; hjrg i = 300~ 1000 Low Collector Saturation Voltage : v CE(sat)= -0.5V (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2sb16022sd2462 PDF

    Contextual Info: Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features 4.6±0.2 Low collector to emitter saturation voltage VCE sat High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw


    Original
    2sb16042sb1604a PDF

    Contextual Info: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original
    2sb16072sd2469 PDF

    2SB1602

    Abstract: 2SD2462
    Contextual Info: TOSHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : ^FE 1 = 300~1000 Low Collector Saturation Voltage : VCE (sat)“ —0.5y (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2sb16022sd2462100ms PDF

    220E

    Abstract: 2SB1603 2SB1603A
    Contextual Info: Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SB1603 base voltage 2SB1603A Collector to 2SB1603 Ratings –40 VCBO –50 –20


    Original
    2sb16032sb1603a220e PDF

    Contextual Info: TOSHIBA 2SB1602 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 6 Q2 High DC Current Gain : ^FE 1 = 300—1000 Low Collector Saturation Voltage • VCE (sat)= —0-5V (Typ.) Complementary to 2SD2462 • •


    OCR Scan
    2sb16022sd2462 PDF

    2SD2469

    Abstract: 2SB1607
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications


    Original
    2sb1607o-220f2sd2469-15ter+110mhz PDF

    2SB1605

    Abstract: 2SB1605A
    Contextual Info: SavantIC Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION


    Original
    2sb16052sb1605ao-220fcollec-30v PDF

    Contextual Info: Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features 4.6±0.2 Low collector to emitter saturation voltage VCE sat High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw


    Original
    2sb16032sb1603a PDF