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Vishay Intertechnologies


Vishay Intertechnologies RN55D2462FB14 - Bulk (Alt: RN55D2462FB14)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RN55D2462FB14	Bulk		10 Weeks	1,000	1 - 10 - 100 - 1000 $0.23 10000 $0.22	Buy Now
Vishay Intertechnologies RN55D2462FRE8 - Tape and Reel (Alt: RN55D2462FRE8)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RN55D2462FRE8	Tape & Reel		10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Vishay Intertechnologies MBB02070D2462DC100 Resistor Professional Metal Film 24.6k Ohm 0.5% 2/5W ?25ppm/K Ceramic Axial T/R - Ammo Pack (Alt: MBB02070D2462DC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBB02070D2462DC100	Ammo Pack		5 Weeks	1,000	1 - 10 - 100 - 1000 $0.30 10000 $0.24	Buy Now
Vishay Intertechnologies MBB0207VD2462BC100 Resistor Precision Metal Film 24.6k Ohm 0.1% 2/5W ?25ppm/K Ceramic Axial T/R - Ammo Pack (Alt: MBB0207VD2462BC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBB0207VD2462BC100	Ammo Pack		7 Weeks	1,000	1 - 10 - 100 - 1000 $0.65 10000 $0.58	Buy Now
Vishay Intertechnologies MMA02040D2462BB300 MMA02040D2462BB300 - Tape and Reel (Alt: MMA02040D2462BB300)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MMA02040D2462BB300	Tape & Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now

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D2462 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D2462 Abstract: 2SB1602 2SD2462 Contextual Info: D2462 東芝トランジスタシリコンNPN三重拡散形 D2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)	Original	2sd2462 2sb1602 20070701-ja d2462	PDF
D2462 Abstract: 2SB1602 2SD2462 Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602	Original	2sd2462 2sb1602 d2462	PDF
d2462 Abstract: 2SD2462 2SB1602 Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •	Original	2sd2462 2sb1602 d2462	PDF
D2462 Abstract: 2SD2462 2SB1602 Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •	Original	2sd2462 2sb1602 d2462	PDF
4BE67 Abstract: C356D E5 0D E7834 Contextual Info: 123456789 ABC9ADEDF9B9CED9 D9DF9B9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A	Original	23435671839a5bcdbe41 d4d92 84d84a5673df4 a75a904a +10a567e4 d84a57 46a646 d64fa97a 4c489a e7c52e9 4be67 c356d e5 0d e7834	PDF
D2462 Abstract: 2SB1602 2SD2462 Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •	Original	2sd2462 2sb1602 d2462	PDF
d2462 Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •	Original	2sd2462 2sb1602 d2462	PDF