2SD669A Search Results

2SD669

Abstract: 2SD669A ALL 2SD669A DSA003644
Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C)

2SD669A

Abstract: 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

VCEO160V

Abstract: HS669A 14014B 2SD669A transistor 160v 1.5a npn
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD669A HS669A █ 主要用途 █ 外形图及引脚排列 作低频功率放大。 █ 极限值（Ta=25℃） TO-126 T stg ——贮存温度………………………………… -55~150℃

2SD669A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669A TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD669A

Abstract: 2SD669
Contextual Info: 2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol 2SD669 2SD669A Unit Collector-Emitter Voltage VCBO 180 180 V Collector-Base Voltage VCEO 120 160

2SD669 hitachi

Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO -126 MOD Ì 1 Emitter 2 Collector 3 Base 2SD669,2SD669A Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD669 C ollector to base voltage

2SD669A

Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB649/A Outline 2SD669, 2SD669A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage ^C B O

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126C TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector- Base Voltage

2SD669

Abstract: 2sd669 hitachi Hitachi DSA00164 2SD669A
Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD669 2SD669A

2SD669

Abstract: 2SD669A 2DS669
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO- 126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD669Al

Abstract: 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L transistor 160v 1.5a npn 2sd669ag-x-aa3-r 2SD669AG 1.5A NPN power transistor TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A Lead-free: 2SD669L/2SD669AL Halogen-free: 2SD669G/2SD669AG „ ORDERING INFORMATION

Contextual Info: 2SD669,2SD669A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB649/A Outline 2SD669, 2SD669A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage ^G B O

2SD669

Abstract: 2SD669A 649a 2SB649A 2SB649
Contextual Info: Inchange Semiconductor Product Specification 2SD669 2SD669A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SB649/649A ・High breakdown voltage VCEO:120/160V ・High current 1.5A ・Low saturation voltage,excellent hFE linearity

2SD669A

Abstract: 2sd669 2DS669
Contextual Info: 2SD669/2SD669A NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.200 3 10.60 0 11.00 0 2 1 Features — 3.900 4.100 3.000 3. BASE 0.000 0.300 2.100 2.300 Low frequency power amplifier complementary pair with 2SB649/A

2SD66A

Abstract: 2SD669 2SD669A HITACHI
Contextual Info: HITACHI 2SD669, 2SD669A SILICON NPN EPITAXIAL LOW FR EQ U EN C Y PO W ER AM PLIFIER COM PLEM ENTARY PAIR WITH 2SB649/A ; I: «-t !. r g t. lim k ic r 2. 0>iUxu<r X Ü.S.VÍ II '¿.3±03 {JE D E C TO-126 MOD. • A B SO LU T E MAXIMUM RATINGS Ta=2S°C) item

transistor 160v 1.5a pnp

Abstract: 2SD669 2SB649A 2SD669A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649A DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-160V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669A

2SD669A

Contextual Info: 2SD669A 2SD669A TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: 1.5 A Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

2SD669A

Abstract: 2DS669 transistor 2sb649 2SD669 equivalent 2SD669
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO- 126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD669

Contextual Info: 2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES 2.7±0.2 7.6±0.2 1.3±0.2 Power dissipation PCM : 1mW（Tamb=25℃） Collector current

2sd669

Abstract: 2sd669 hitachi Hitachi DSA00279 2sd669a
Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD669 2SD669A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669A TRANSISTOR NPN TO-126C FEATURES Power dissipation 1 PCM: W (Tamb=25℃) 1. EMITTER Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range