2SA1127 Search Results

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

transistor 2sc2634

Abstract: 2SA1127 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 4.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 5.1±0.2 ● Low noise characteristics. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings

2SA1127

Abstract: Low-Frequency Low-Noise PNP transistor 2SC2634 2SC263
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter Symbol

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

transistor 2sc2634

Abstract: 2SA1127 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter Symbol

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.2 • Features 12.9±0.5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)