2SC263 Search Results

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

2SC2636

Abstract: 2SC263
Contextual Info: Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9±0.1 1.5 Ta=25˚C 1.0 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SA1124

Abstract: 2SC2632
Contextual Info: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● ● • Absolute Maximum Ratings 0.7±0.1 0.7+0.3 –0.2 ● Satisfactory foward current transfer ratio hFE collector current IC

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

2SC2637

Abstract: AS131
Contextual Info: 2SC2637 2SC2637 '> i zj > N P N H jE iS ffcy u —•^"JF^/Si NPN Triple Diffused Planar ^ 7 - TV $ ■ i# v ttj^ jffl/C o lo r TV Chroma Output p S /F e a tu re s • 3 • z i ) s 7 7 i f k 9 i Pc ^ ^ - X i ■ ’y ; ? 1E J ± V C E O ^ i | ^ V > 0 / H i g h

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

transistor 2sc2634

Abstract: 2SA1127 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 4.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

2SA1123

Abstract: 2SC2631 SC-43A
Contextual Info: Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage Base open VCEO

2SA1124

Abstract: 2SC2632
Contextual Info: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● • Absolute Maximum Ratings 0.7±0.1 +0.3 ● 0.7–0.2 ● Satisfactory foward current transfer ratio hFE collector current IC

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 6 3 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm FU

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2SC2879

Abstract: 150PEP
Contextual Info: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

2SA1123

Abstract: 2SC2631 2sa1123 transistor
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

UPA75HA

Abstract: 2SC2602 2SC2611B 2SC2650 2SC2601 2sc2335 2SC2534 2SC2625 upa75 2SC3082K
Contextual Info: - 142 - £ m € a T yp e No. «5 T 2SC 2591 « 2SC 2592 M anuf. T 2SC 2595 «i T 2SC 2596 T i* = SANYO 3K *£ TO SH IBA h 2SC 2605 w 2SC 2SC 2SC r 2SC1657 /' i B B 2SC 2620 ✓ im 2SC 2621 / ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL •ti 2SC 2618 A 2SC2634

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

2SC2636

Contextual Info: Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9±0.1 1.5 Ta=25˚C 1.0 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SC2632

Abstract: 2SA1124 TO-92L-A1 2sa112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 4.9±0.2 0.7±0.1 0.7+0.3 –0.2 • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/

BF456

Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A

2SC2631

Abstract: 2SA1123
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.