AS131 Search Results

AS1310

Abstract: XPL7030-682M GRM31CR60J475K
Contextual Info: Data sheet AS1310 U l t r a L o w Q u i e s c e n t C u r r e n t , H y s te r e t i c D C - D C S t e p - U p C o n v e r t e r 1 General Description 2 Key Features Input Voltage Range: 0.7V to 3.6V The AS1310 is an ultra low IQ hysteretic step-up DC-DC converter

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

XPL2010-682M

Abstract: XPL7030-682M AS1310-BTDT-20 AS1310
Contextual Info: Data sheet AS1310 U l t r a L o w Q u i e s c e n t C u r r e n t , H y s te r e t i c D C - D C S t e p - U p C o n v e r t e r 1 General Description 2 Key Features Input Voltage Range: 0.7V to 3.6V The AS1310 is an ultra low IQ hysteretic step-up DC-DC converter

Contextual Info: Datasheet AS1310 U l t r a L o w Q u i e s c e n t C u r r e n t , H y s te r e t i c D C - D C S t e p - U p C o n v e r t e r 1 General Description 2 Key Features Input voltage range: 0.7V to 3.6V The AS1310 is an ultra low IQ hysteretic step-up DC-DC converter

Contextual Info: GaAs SPDT Non-Reflective Switch DC-2.5 GHz EBAlpha AS131-59 F eat ur e s • Low DC Power Consumption M S O P -8 0 .0 2 5 6 0 .6 5 m m TYP. ■ High Isolation (45 dB @ 0.9 GHz) 0 .1 1 8 (3 .0 0 m m ) ■ Non-Reflective 0 .0 0 4 (0.1 m m ) 0 .1 9 3 (4 .9 0 m m )

Contextual Info: A S1 3 1 2 Ul tr a L o w Q u ie s c e n t Cu rr e n t , H y s te r e ti c D C- DC St ep - U p C o n v e r te r 1 General Description 2 Key Features The AS1312 is an ultra low IQ hysteretic step-up DC-DC converter. Input voltage range: 0.7V to 5.0V The AS1312 achieves an efficiency of up to 94% and is designed to

AS131-59

Contextual Info: GaAs SPDT Non-Reflective Switch DC–2.5 GHz AS131-59 Features MSOP-8 • Low DC Power Consumption 0.0256 0.65 mm TYP. ■ High Isolation (45 dB @ 0.9 GHz) PIN 1 INDICATOR 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. ■ Non-Reflective Description PIN 1 The AS131-59 is a high isolation IC FET SPDT

AS131-59

Contextual Info: GaAs SPDT Non-Reflective Switch DC-2.5 GHz EHAlpha AS131-59 Features MSOP-8 Low DC Power Consumption 0.0256 0.65 mm TYP. High Isolation (45 dB @ 0.9 GHz) 0.118 (3.00 mm) 0.004 (0.1 mm) SQ. Non-Reflective II Description 0.012 (0.30 mm) The AS131-59 is a high isolation IC FET SPDT

Contextual Info: Data sheet AS1310 U l t r a L o w Q u i e s c e n t C u r r e n t , H y s te r e t i c D C - D C S t e p - U p C o n v e r t e r 1 General Description 2 Key Features Input Voltage Range: 0.7V to 3.6V The AS1310 is an ultra low IQ hysteretic step-up DC-DC converter

AS131-59

Contextual Info: GaAs SPDT Non-Reflective Switch DC–2.5 GHz AS131-59 Features MSOP-8 • Low DC Power Consumption 0.0256 0.65 mm TYP. ■ High Isolation (45 dB @ 0.9 GHz) PIN 1 INDICATOR ■ Non-Reflective Description 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. PIN 1 The AS131-59 is a high isolation IC FET SPDT

Contextual Info: GaAs SPDT Non-Reflective Switch DC-2.5 GHz EBAlpha AS131-59 Features MSOP-8 • Low DC Power Consumption 0.0256 0.65 mm TYP. ■ High Isolation (45 dB @ 0.9 GHz) PIN 1 INDICATOR ■ Non-Reflective 0.193 (4.90 mm) REF. Description 0.012(0.30 mm) The AS131-59 is a high isolation IC FET SPDT

M40Z300

Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply

as4301

Abstract: AS1201F-M5-06 AS2201F AS2301F-01-06S AS1201F-M3-23 AS1201F-M3 0104S AS1201F-M3-04 AS430 AS2201F-01-06S
Contextual Info: Speed Controller with One-touch Fittings Elbow Type/Universal Type Applicable tubing O.D.: Metric Size Connection thread: M, R How to Order 01 06 S AS 2 2 1 1F Electroless nickel plated specifications Body size 1 M3, M5 standard 2 1/8, 1/4 standard 3

Contextual Info: AS131A 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS WITH ADDRESS REGISTERS D2661, APRIL 1982 - REVISED MAY 1986 SN 74AS 131A . D OR N PACKAGE Combines Decoder and 3-Bit Address Register TOP VIEW Incorporates 2 Enable Inputs to Simplify Cascading AC 1 ^ 1 6 ] v c c

Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

UY-6

Abstract: SN74AS131A
Contextual Info: AS131A 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS WITH ADDRESS REGISTERS D2661, A P R IL 1982 - R E V IS E D M A Y 1986 • Combines Decoder and 3-Bit Address Register AS131A . . . D OR N PACKAGE TOP VIEW Incorporates 2 Enable Inputs to Simplify Cascading

M48Z128

Abstract: M48Z128V M48Z128Y SOH28 TSOP32
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

SOH28

Abstract: TSOP32 M48Z128 M48Z128V M48Z128Y
Contextual Info: M48Z128 M48Z128Y, M48Z128V 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M40Z300

Abstract: M48Z128 M48Z128V M48Z128Y D 4242 CP1621
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

M48Z128V

Abstract: M48Z128Y SOH28 TSOP32 M48Z128 M68Z128
Contextual Info: M48Z128 M48Z128Y, M48Z128V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE