0820F Search Results

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

Contextual Info: K6F2008V2M, K6F2008S2M, K6F2008R2M Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 2, 1996 Advance 0.1 Revise - Remove sTSOP1 from product

K6X1008C2D-GF55

Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
Contextual Info: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.

K6T1008C2E-GB70

Abstract: K6T1008C2E-TB55
Contextual Info: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.

KM68V512ALTE-10L

Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.

Contextual Info: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible

Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply

Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product

EN25QH

Abstract: 1AEF00 cFeon* SPI Flash
Contextual Info: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages

K6X1008

Abstract: K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70
Contextual Info: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.

km68512lg

Abstract: km68512l 68512 KM68512LT
Contextual Info: KM68512ÜL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 1(VW (typ.) L-Version 5(iW (typ.) LL-Version Operating : 35mW (typ.)

Contextual Info: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and

Contextual Info: K M 6 8 V 2 0 0 0 , K M 6 8 U 2 0 0 0 Fami l y CM OS SRAM Dacuro ent T\t\ 2 56 Kx 8 bit Low Power and Low Voltage C M O S Static RAM R e v is io n N o . H is to ry D raft D ata R em ark 0.0 Design target January 30th 1997 Advance 0.1 Initial draft April 7th 1997

Contextual Info: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8

Contextual Info: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

KM681000AL-L

Abstract: KM681000ALT
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

KM68S2000LT-12L

Abstract: KM68S2000LT-15L
Contextual Info: KM68S2000 Family Preliminary CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft September 30, 1997 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6T4008V1C-VF70

Abstract: K6T4008U1C K6T4008V1C K6T4008V1C-B KM68U4000C
Contextual Info: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns

package tsop1

Abstract: K6T2008U2M K6T2008V2M K6T2008V2M-B KM68U2000 KM68V2000
Contextual Info: K6T2008V2M, K6T2008U2M Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 30, 1997 Advance 0.1 Initial draft April 7, 1997 Preliminary 1.0 Finalize

K6T2008U2A

Abstract: K6T2008U2A-B K6T2008U2A-F K6T2008V2A K6T2008V2A-B K6T2008V2A-F K6T2008V2A-YF70
Contextual Info: K6T2008V2A, K6T2008U2A Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target May 26, 1998 Advance 1.0 Finalize October 8, 1998 Final 2.0 Revised - Add FBGA type package

KM68U2000A

Abstract: KM68U2000ALI-L KM68U2000AL-L KM68V2000A KM68V2000ALI-L KM68V2000AL-L KM68V2000ALTGI-8L
Contextual Info: KM68V2000A, KM68U2000A Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target May 26, 1998 Advance 1.0 Finalize October 8, 1998 Final 2.0 Revised - Add FBGA type package

km681000clg-5l

Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
Contextual Info: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA