81000A Search Results

AN4839

Abstract: DS2103SY DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Contextual Info: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode

Contextual Info: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to

Contextual Info: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification

DS2103SY

Abstract: DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Contextual Info: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode

CI 3060 elsys

Abstract: 175C TR2103SY TR2103SY21 TR2103SY22 TR2103SY23 TR2103SY24 TR2103SY25 TR2103SY26
Contextual Info: TR2103SY TRAN SYS m cTR om cs 11 m *t e Rectifier Diode u KEY PARAMETERS VRRM 2600V 4785A F AV 81000A FSM APPLICATIONS • Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers FEATURES ■ Double Side Cooling

Contextual Info: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification

THM81000AS80

Abstract: THM81000AS THM81000AS10
Contextual Info: 1,048,576 WORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The TH M 81000A S/ASG/AL is a 1 ,0 4 8 ,5 7 6 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 5 1 1 0 0 0 A J on the printed circuit board. The T H M 81000A S/A L is optim ized for application to

DS2103SY24

Abstract: DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY25 DS2103SY26
Contextual Info: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification

Contextual Info: @ M ITEL DS2103SY Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 KEY PARAMETERS VRRM 2600V IF av, 4785A 'fs m 81000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

DS2103SY21

Abstract: DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Contextual Info: DS2103SY/DS2103SV DS2103SY/DS2103SV Rectifier Diode Replaces December 2001 version, DS4172-5.1 DS4172-6.0 February 2003 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification

as1000a

Abstract: 74AS1000
Contextual Info: SN74AS1000A. SN54AS1000A QUADRUPLE 2-INPUT P0SIT1VE-NAND BUFFERS/DRIVERS 02 161, APRIL 1984 - REVISEO MAY 198« SN54AS1000A . . . J PACKAGE SN74AS1000A. D OR N PACKAGE (TOP VIEW AS1000A is a Driver Version of 'ASOO AS1000A Offers High Capacitive-Driver

81623B

Abstract: 81624B GE 7031 81624B-C01 Optical power meter
Contextual Info: Agilent Optical Power Meter Head Special Calibration Data Sheet January 2010 This document describes the calibration of Agilent’s optical power meter heads 81623B, 81624B, 81626B for standard products as well as the “special calibrations” C01, C02, C85, C86,

81610CC

Abstract: 81000LI 81636B DIN47256 81002LI 81634B 81628B H 547 magnetic sensor 81623b
Contextual Info: Agilent Power Sensor Modules Agilent Optical Heads Agilent Return Loss Modules Data Sheet Optical power measurement modules The Agilent optical power measurement modules provide high performance functionality to the Agilent Lightwave Measurement platform.

TCA 810

Contextual Info: DS2103SY M ITEL Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies. ■ W elding. ■ Battery C hargers. March 1998

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KMM581000A

Abstract: KM41C1000AJ KMM481000A-8
Contextual Info: 81000A/81000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung 81000A and 81000A are 1 M x 8 dynamic RAM high density memory modules.

MCM81000AS10

Abstract: motorola 30-pin simm memory dynamic mcm81000s
Contextual Info: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA 1Mx8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and M CM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bils. The modules are 30-lead single-in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP)

Contextual Info: GM23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The

Contextual Info: Agilent 8509C Lightwave Polarization Analyzer Product Overview Highly accurate and repeatable polarization measurements of signal and components 1280 nm to 1640 nm • L-Band extended wavelength option • High resolution and accuracy on narrowband devices

Contextual Info: ParBERT 81250 Parallel Bit Error Ratio Test Platform E4810A 3.35Gb/s 850nm Optical-Electrical Generator Module E4811A 3.35Gb/s 850nm Optical-Electrical Analyzer Module ParBERT Platform gains optical Features & Benefits • 21 Mb/s upto 3.35 Gb/s covers today's hot new devices

Contextual Info: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.

Contextual Info: E6020A Fiber Break Locator Technical Data Sheet Specifications describe the instrument´s warranted performance, measured with typical PC- type connectors. Uncertainties due to the refractive index of fiber are not considered. The following section contains both Specifications and Characteristics:

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81000 1M x 8 Bit Dynamic Random Access Module T h e M C M 8 1 0 0 0 is a n 8 M d y n a m ic ra n d o m a c c e s s m e m o ry D R A M m o d u le o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 x 8 b its . T h e m o d u le is a 3 0 -le a d s in g le -in -lin e m e m o ry

ICE ICC3

Abstract: KMM581000A-8 KMM581000A-10 KMM581000A10 km41c1000aj 30-pin simm memory KMM481000A-8
Contextual Info: SAMSUNG S EM ICONDUCTOR INC E3E D • 7^4142 000Ô523 S ■ T 81000A/81000A - ï b - Z Z - l ' ? MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung 81000A and 81000A are