E6020A Search Results
E6020A Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
NCE6020AI
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NCEPOWER | NCE6020AI is a 60V, 20A channel enhancement mode power MOSFET with RDS(ON) less than 25mΩ at VGS=10V, designed using advanced trench technology for low gate charge and high switching efficiency in power applications. | Original | ||||
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NCE6020AK
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NCEPOWER | NCE6020AK is a channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of less than 35mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications. | Original | ||||
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NCE6020AQ
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NCEPOWER | NCE6020AQ is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 20A continuous drain current, RDS(ON) less than 23mΩ at VGS=10V, and low gate charge, suitable for high-frequency switching applications. | Original | ||||
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NCE6020A
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NCEPOWER | NCE6020A is a Pb-free N-channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. | Original | ||||
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NCE6020AL
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NCEPOWER | NCE6020AL is a channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications. | Original |
E6020A Price and Stock
Wuxi
E6020A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: E6020A Fiber Break Locator Technical Data Sheet Specifications describe the instrument´s warranted performance, measured with typical PC- type connectors. Uncertainties due to the refractive index of fiber are not considered. The following section contains both Specifications and Characteristics: |
Original |
E6020A 5988-2301EN |