175C Search Results

PSMN4

Contextual Info: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: KEMET Part Number: T499X336K035ATE600 Capacitor, tantalum, 33 uF, 7343, +/-10% Tol, 35V@85C General Information Manufacturer: Miscellaneous Electrical: KEMET Max Ripple Current Rating at +175C = 104.8 mA Electrical Specifications Capacitance: 33 uF Voltage DC @ 85C:

1N957

Abstract: 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N962B-1 1N986B 1N986B-1
Contextual Info: • 1N962B-1 THRU 1N986B-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N957 thru 1N986B and • METALLURGICALLY BONDED -1 1N962B-1 thru 1N986B-1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175C>C Storage Temperature: -65°C to +175°C

175C

Abstract: IC300A
Contextual Info: SML300HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/ Electrical Properties Collector-emitter Voltage Y Vce 600 V Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom

2000A power diode

Abstract: DIODE 200A 600V ic 7800 175C
Contextual Info: SML200HB12 Attributes: -Aerospace build standard -High reliability -Lightweight -Metal matrix base plate -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties Vce Y Collector-emitter Voltage 1200 V Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom

Contextual Info: KEMET Part Number: T499D226K025AGE800 Capacitor, tantalum, 22 uF, 7343, +/-10% Tol, 25V@85C General Information Manufacturer: Miscellaneous Electrical: KEMET Max Ripple Current Rating at +175C = 86.6 mA Electrical Specifications Capacitance: Voltage DC @ 85C:

th d560

Abstract: d560 mosfet d571 transistor d571 D560 transistor 175C
Contextual Info: PSMN7R0-100ES N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Rev. 03 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN9R5-100PS

Abstract: 175C
Contextual Info: PSMN9R5-100PS N-channel 100 V 9.6 mΩ standard level MOSFET in T0220 Rev. 02 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

175C100B

Abstract: 175C120B 175C60B 175C80B
Contextual Info: Seríes 175C Silicon Controlled Rectifier Dim Inches Minim um Z -Y r x v " , u t T T*=r ^ i i i H l TO-209AB T093 Notes: 1. 3 /4 - 1 6 UNF-3A 2. Full thread within 2 1 /2 threads 3. For insulated cathode lead, add suffix ” IL” to catalog number „ Microsemi,

Contextual Info: D2 PA K PSMN027-100BS N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 October 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: TO -22 0A B PSMN016-100PS N-channel 100V 16 mΩ standard level MOSFET in TO220 Rev. 2 — 21 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

PSMN013-100ES

Contextual Info: I2P AK PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: TO -2 20F PSMN5R6-100XS N-channel 100V 5.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 2 — 26 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.

PSMN013-100PS

Contextual Info: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: D2 PA K PSMN034-100BS N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: D2 PA K PSMN016-100BS N-channel 100V 16 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

175C

Abstract: PSMN3R5-80ES
Contextual Info: I2P AK PSMN3R5-80ES N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

th d560

Abstract: d560 D560 transistor mosfet d571 175C PSMN7R0-100ES D571
Contextual Info: PSMN7R0-100ES N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Rev. 01 — 17 September 2009 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode MOSFET in a I2PAK package qualified to 175C. This product is designed and qualified for use in computing, communications,

175C

Contextual Info: SML300HB12 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/Electrical Properties Vce 1200 V Y Collector-emitter Voltage Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom

Contextual Info: KEMET Part Number: T499C106K016ATE1K8 Capacitor, tantalum, 10 uF, 6032, +/-10% Tol, 16V@85C General Information Manufacturer: Miscellaneous Electrical: KEMET Max Ripple Current Rating at +175C = 49.4 mA Electrical Specifications Capacitance: Symbol Voltage DC @ 85C:

MIFARE DESFire

Contextual Info: PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F SOT186A 12 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 4 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

175C

Contextual Info: PSMN016-100PS N-channel 100V 16 mΩ standard level MOSFET in TO220 Rev. 01 — 1 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

175C

Contextual Info: I2P AK PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 01 — 28 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic