PSMN4 Search Results

PSMN4

Contextual Info: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

4C530

Abstract: 003A MARKING PSMN4R5-30YLC PSMN4R5 4C530L
Contextual Info: PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK Rev. 02 — 30 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN4R6-60PS

Contextual Info: PSMN4R6-60PS N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

MO-235

Abstract: PSMN4R0-30YL
Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: LF PA K PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: D2 PA K PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 12 April 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on,

AF514

Abstract: PSMN4R0-25YLC JESD22-A115
Contextual Info: PSMN4R0-25YLC N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN4R0-30YL

Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN4R0-30YL

Contextual Info: LF PA K PSMN4R0-30YL N-channel 30 V 4 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

175C

Contextual Info: I2P AK PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 01 — 28 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: I2P AK PSMN4R3-100ES N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: TO -22 0A B PSMN4R3-100PS N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product

Contextual Info: LF PA K PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 5 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: TO -2 20A B PSMN4R2-60PL N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78 5 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools.

Contextual Info: LF PA K 56 PSMN4R0-30YLD N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPower Technology 2 August 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed

Contextual Info: LF PA K 33 PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: PA K 33 PSMN4R4-30MLC LF N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

Contextual Info: TO -2 20A B PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package 11 July 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand

PSMN4R6-60PS

Contextual Info: PSMN4R6-60PS N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Rev. 01 — 11 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

PSMN4R5-40PS

Contextual Info: PSMN4R5-40PS N-channel 40 V 4.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

175C

Contextual Info: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 03 — 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

4C130L

Abstract: max3092 4c130
Contextual Info: LF PA K PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 12 February 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: D2 PA K PSMN4R6-60BS N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: D2 PA K PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 26 March 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on,