658128 Search Results

HM658128ALP-10

Abstract: HM658128ALFP-8l HM658128ALFP-8 HM658128ALP-8 N1308 HM658128ALFP-12 HM658128ALP12
Contextual Info: 658128A Series 131072-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-188H Z Rev. 8.0 Jun. 5, 1995 Description The Hitachi HM 658128A is a pseudo-static RAM organized as 131,072-word x 8-bit. HM 658128A realizes low power consumption and high speed access time by employing 1.3 [Am CMOS process technology. The

Contextual Info: 658128A Series 131,072-W ord x 8 -B it High S p eed Pseudo S tatic RA M I FEATURES Single 5V ±10% High speed Access time CE access time: 80/100/120 ns Cycle time Random read/write cycle time: 130/160/190 ns Low power 250 mW typ. Active 350 |iW typ. Standby (L-version, LL-version)

KM658128

Contextual Info: m s« 658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

km658128

Abstract: 658128 PSEUDO SRAM
Contextual Info: 658128/L/L-L/LD/LD-L Pseudo SRAM 12 8 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random ReadfWrite Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

Contextual Info: 658128/L7L-ULD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast AcceM Time: — SE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle T im e . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

658128

Contextual Info: 658128A Series 131072-word x 8-bit High Speed CMOS Pseudo Static RAM The Hitachi 658128A is a pseudo-static RAM organized as 131,072-word x 8-bit. 658128A realizes low power consum ption and high speed access time by employing 1.3 nm CMOS process technology.

658128ALFP-8

Abstract: 658128ALFP-12 658128 M658128A HM658128ALP 658128alfp HM658128ADFP-10 m65812
Contextual Info: 658128A Series 131,072-Word x 8-Bit High Speed Pseudo Static RAM I FEATURES Single 5V ±10% High speed Access time CE access time: 80/100/120 ns Cycle time Random read/write cycle time: 130/160/190 ns Low power 250 mW typ. Active 3 5 0 jiW typ. Standby (L-version, LL-version)

658128

Abstract: hitachi eprom HMCS6800 Hitachi Transparent Conductive Transfer Film HM658128 Static Column & Page-Mode Detector time-base corrector "magnetic tape"
Contextual Info: • APPLICATIO N 1.2. Data Retention Mode and Battery Back-up System The data in RAM is destroyed at power off. How­ ever, CMOS static RAM has a data retention mode. In this mode, power consumption at standby is ex­ tremely low and supply voltage can be reduced to

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KM658128

Contextual Info: PRINTED IN KOREA Circuit diagrams utilizing SAMSUNG products are included as a means of illustrating typical semiconductor applications; consequently, complete information sufficient for construction purposes is not necessarily given. The information has been carefully checked and is believed

658128

Abstract: KM658128A
Contextual Info: Pseudo SRAM 658128A/AL/AL- L 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

658128

Abstract: KM658128-8 km658128-10
Contextual Info: 658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — E l Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

658128

Abstract: 32PIN GW-12L
Contextual Info: - 1531M P s e u d o * m « it £ ìm x w -C 4 S t a t i c 1- TAAC max (ns) TCAC max (ns) TOE •ax (ns) TOH ■in (ns) y ? & RAM ( 1 3 1 0 7 2 x 8 ) $ a TOD max (ns) TUP min (ns) TDS min (ns) TDH min (ns) TWD ■in (ns) TIR max (ns) V D D or V C C (V) 3 2 P I N

658128

Contextual Info: 658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: — CE A ccess Tim e . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle Tim e . 130,160,190ns (Max.) • Low Power Dissipation . 200m W typ. (Active)

658128

Abstract: 6S81 hm658128lp-12 HM658128LFP-10 HM658128LP-10
Contextual Info: HM6S8128 Series 131072-word x 8-bit High Speed C M O S Pseudo Static R A M The Hitachi 658128 is a pseudo-static RAM organized as 131,072-word x 8-bit. 658128 realizes low power consump­ 658128P Series tion and high speed access time by employing 1.3£im CMOS