5118160 Search Results

Contextual Info: SIE M EN S 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50

5118160

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

5118160

Abstract: AG71S 0071547 d0715 Q67100-Q1072 Q67100-Q1073 Q67100-Q1074
Contextual Info: SIEM ENS Olk -R e fiih DynamiC RAM HYB 5118160b s j -50/-60/-70 Advanced Inform ation 1 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle tim e RAS access time: 50 ns -50 version) 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: 5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers

Contextual Info: 5118160I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-756A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM 51181601 Series are CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 5118160I

smd code marking rac

Abstract: HYB3118160 HYB5118160 RAD SMD MARKING CODE
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC

m5118160

Abstract: m51161 S-024BB
Contextual Info: HM5116160 Series 5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576word X 16-bit. They employ the most advanced CMOS technology for high performance and low power.

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 ¿RAC RAS access time 50 60 70 ns ¿CAC CAS access time 13

TC5118160B

Contextual Info: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • 5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT

ADE-203-634C

Contextual Info: HM5116160 Series 5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634C Z Rev, 3.0 Feb. 21, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The

CD4530

Abstract: M5118160 Nippon capacitors 5118160
Contextual Info: HB56G232 Series, HB56G132 Serie 2,097,152-word x 32-bit High Density Dynamic RAM Module 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-701A Z Rev.1.0 Dec. 27, 1996 Description The HB56G232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (H M 5118160)

TC5118160

Abstract: TC5118160B
Contextual Info: TOSHIBA 5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

AX. A431

Abstract: TC5118160A TOSHIBA 5118160 TC5118160AJ 5118160AJ
Contextual Info: TOSHIBA TC511816QAJ/AFT -70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The T C 5118160 AJ/A FT is the new generation dynam ic RAM organized 1,048,576 word by 16 bit. The 5118160A J/A FT utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit

5118160BSJ

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 'C operating temperature • Performance: -50 -60 -70 fRAC RAS access time 50 60 70 ^CAC CAS access time 13 15

Nippon capacitors

Contextual Info: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)

Contextual Info: HB56G236 Series, HB56G136 Series 2,097,152-word x 36-bit High Density Dynamic RAM Module 1,048,576-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-702B Z Rev.2.0 Jun. 20, 1997 Description The HB56G236 is a 2M x 36 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (5118160)

Contextual Info: HB56G236 Series, HB56G136 Series 2,097,152-word x 36-bit High Density Dynamic RAM Module 1,048,576-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-702A Z Rev.1.0 Dec. 27,1996 Description The HB56G236 is a 2M x 36 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (5118160)

5118160

Abstract: HYB3118160 HYB5118160
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

SB6B

Contextual Info: HB56G232B/SB-6B/7B 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-547A Z Rev. 1.0 Feb. 20,1996 Description The HB56G232 is a 2M x 32 dynamic RAM module, mounted 4 pieces o f 16-Mbit DRAM (5118160BJ) sealed in SOJ package. An outline o f the HB56G232 is 72-pin single in-line package. Therefore, the HB56G232 makes high

Contextual Info: HM5116160 Series 5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634B Z Rev. 2.0 Dec. 5,1996 Description The Hitachi HM5116160 Series, 5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

Contextual Info: SIEM ENS 1 M X 1 6 - B it D y n a m ic R A M H Y B 5 1 1 8 1 6 0 B S J -5 0 /-6 0 /-7 0 1 k -R e fre s h A d v a n c e d In fo rm a tio n • 1 04 8 57 6 w o rd s by 16-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

5118160

Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
Contextual Info: 1M x 16-Bit Dynamic RAM 1k-Refresh 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20