514256 Search Results

HYB514256B-50

Abstract: HYB514256B-60 HYB514256B-70 HYB514256BJ-50 HYB514256BJ-60 HYB514256BJ-70 HYB514256BL-50 514256 514256b-70
Contextual Info: 256 K x 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

MSM51C256A

Abstract: MSC2321B-70YS18
Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/DS18 is a fully decoded 524,288-w o rd x 36-bit CMOS D ynam ic R andom Access M em ory M odule com posed of sixteen 1-Mb DRAMs in SOJ M SM 514256B packages an d eight

514256a

Abstract: MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80
Contextual Info: i O rder this docum ent by M CM 514256A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The 514256A is a 1,0|x CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS

514256-10

Abstract: HM514256 hitachi HM514256
Contextual Info: 514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ­ ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g

P5501

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 A d v a n c e d In fo rm a tio n 2 62 144 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in f 'BB

Contextual Info: 524,288 W O R D S x 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTIO N T he TH M 325120BS/BSC/AS/ASG is a 524,288 words by 32 b its dynam ic RAM m odule w hich assem bled 16 pcs of T C 514256A J/B J on the p rin te d circu it board. T hese m odules can be as w ell used

m514256a

Contextual Info: 514256A/AL Series 262,144-Word x 4-Bit CM O S Dynamic RAM • DESCRIPTION 514256A/ALP Series The Hitachi HM 514256A/AL is a C M O S dynamic RAM organized 262,144-word x 4-bit. HM 514256A/AL has realized higher density, higher performance and various functions by employing 1.3 jj.m C M O S technology and some new C M O S circuit de­

BL-70

Abstract: 514256B-80 514256B-70 514256BZ-70
Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJUBZL-60/-70 Advanced Information • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

514256

Abstract: 514256BJ-70 Q67100-Q1044 514256b-60
Contextual Info: 256 K x 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M S C 2333B -xxY S 16/D S 16 is a fully d eco d ed 524,288-w o rd x 32-b it CM OS D ynam ic R an dom A ccess M em ory M odule com p osed of sixteen 1-Mb D RAM s in SOJ M SM 514256B p ack ages m ounted

m514256

Abstract: M514256A MCM514256AP70 M514256A-80 MCM514256AP80 MCM514256AJ70 M514 MCM514256AJ70R2 M51425 L42S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256K x 4 Bit CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The M C M 514256A is a 1 .0 ^ CM OS high-speed dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated w ith C M OS silicon-gate pro­

YS16

Abstract: JTS5
Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2333B-xxY S16/D S16 is a fully decoded 524,288-w ord x 32-bit CM O S D ynam ic Random Access M em ory M odule com posed of sixteen 1-Mb DRAM s in SOJ M SM 514256B packages mounted

Contextual Info: SIEM ENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advanced Inform ation • • • • • • • • • • 262 144 w ords by 4-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60

bl70

Abstract: q542 514256B-80
Contextual Info: SIEMENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advanced Inform ation • • • • • • • • • • 262 144 words by 4-bit organization Fast access and cycle time 60 ns access tim e 110 ns cycle tim e HYB 514256B/BL-60

514256

Abstract: HM514256 m514256 M 514256 hitachi HM514256 514256P HM514256-10
Contextual Info: Preliminary H M 514256 S e rie s 262144-word x 4-bit CMOS Dynamic Random Access Memory The Hitachi H M 5 1 4 2 5 6 Series is a C M O S dynam ic R A M or­ ganized 262144-w ord x 4-bit. H M 5 1 4 2 5 6 has realized higher density, higher performance and various functions by em ploying

M514256B

Abstract: *m514256B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­

514256

Abstract: 514256A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM94256 256K x 9 Bit Dynamic Random Access Memory Module The M CM 94256 is a 2.25M dynam ic random access m em ory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line m em ory module (SIM M) consisting of tw o M C M 514256A DRAMs housed in 20/26 J-lead

514256A

Abstract: l 7251 3.1
Contextual Info: nOTOROLA M SC { N E M O R Y / A S I bSE D • b 3 b ? 5 S l 00flT203 325 M O T O R O LA 514256A Advance Information Commercial Plus and Mil/Aero Applications 256K x 4 CMOS Dynamic RAM Page Mode E L E C TR IC A LLY T E S T E D PER: M P G 514256A The 514256A is a 1.0^ CMOS high-speed, dynamic random access memory.

MCM514256A-10

Abstract: MCM514256AP10 MCM514256AJ80 MCM514256AZ80 MCM514256AJ70 CM514256 MCM51L4256A-80 M514256A MCM514256AJ10 MCM51L4256
Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA 514256A MCM51L4256A Advance Information 2 5 6 K X 4 CMOS Dynamic RAM P PACKAGE PLASTIC CASE 738A T h e M C M 514256A is a 1.2p C M O S high-speed, d y n a m ic random access m e m o ry. It is organized as 262,144 fo u r-b it w o rd s a n d fa b ric a te d w ith C M O S silic o n -g a te process te c h ­

514256

Abstract: 514256A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM36512 512K x 36 Bit Dynamic Random Access Memory Module The M CM 36512 is an 18M dynam ic random access m em ory DRAM module organized as 524,288 x 36 bits. The module is a 72-lead double-sided single-in-line m em ory module (SIMM) consisting of sixteen M C M 514256A DRAMs housed in 20/26

Contextual Info: SIEMENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 A d va n c e In fo rm atio n • • 262 144 w o rd s by 4 -b it org a n iza tio n F ast a cce ss and cycle tim e 60 ns acce ss tim e 110 ns cycle tim e H Y B 5142 5 6B /B L -60

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2320B-xxY S9/D S9 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access Memory M odule . It is com posed of eight 1-Mb DRAM s in SO J M SM 514256B packages, and four 256Kb