5116400J Search Results

Contextual Info: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )

Contextual Info: TopTech Semiconductors. Siemens DK> Siemens AG Österreich Postfach 326 1031 Wien 8 (01 71711-5661 El 1372-10 Fax (01) 71711-5973 Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vie. 3121 S (03) 4207111 02 30425 Fax (03) 4 2072 75 Siemens AG

80ns55

Contextual Info: NEWPRODUCT HB56A44QB Series 4 ,194,304-Word X 40-B it H igh D ensity D ynam ic RAM Module Under development - 0H IT A C H I R ev.3 M ay. 2 2 .1 9 9 2 D e sc r ip tio n T h e H B 56A 440B is a 4M X 40 d y n am ic RAM m o d u le, m o u n te d 10 pieces o f 16M bit DRAM

M5116400

Contextual Info: H M 5116400 S e rie s Product Preview 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION The Hitachi H M 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1