514400 Search Results

Contextual Info: SIEMENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50 -60 -70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature Low power dissipation max. 660 mW active -50 version

514400B

Contextual Info: Prelim inary H B 5 6 D 1 3 6B W /S B W -6B /7B /8B 1 ,0 4 8 ,5 7 6 -W o r d x 3 6 -B it H ig h D e n s ity D y n a m ic R A M M o d u le Rev.O Dec.20 .19 93 HITACHI T h e H B 56D 136 is a 1M X 36 d y n a m ic RAM m odule, m ounted 8 pieces of 4M bit DRAM H M 514400B S sealed in SO J package and 2

HM511000J

Contextual Info: HB56D136B/S Series 1,048,576-W ord x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 1 3 6 B /S B /B R /S B R /B S /S B S is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM H M 514400JP/AJ sealed in S O J package and 4 pieces of

taa 723

Abstract: DS16
Contextual Info: O K I Semiconductor MSC23232B/BL-XXBS16/DS16 2,097,152-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M SC 23232B/BL -xxBS16/D S16 is a fully decoded 2,097,152-word x 32-bit CM OS Dynamic Ran­ dom Access Memory Module composed of sixteen 4-M b DRAMs in SOJ M SM 514400B/BL packages

cs5d

Contextual Info: O K I Semiconductor MSC23132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 23132B/BL -xxBS8/D S8 is a fully decoded 1,048,576-word x 32-bit CM OS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages mounted

oa-1160

Abstract: MSC23136 2k240
Contextual Info: O K I Semiconductor M SC 23136B/BL-XXBS 12/DS 12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages and

Contextual Info: HB56D236 Series 2,097,152-word x 36-bit High Density Dynamic RAM Module HITACHI Description The H B 56D 236 is a 2M x 36-bit dynam ic RAM m odule, m ounted 16 pieces o f 4 M bit DRA M HM 514400CS/CLS sealed in SO I package and 4 pieces o f 2 M bit DRAM (HM 512200BS/BLS) sealed in

514400

Abstract: V7777 M514400
Contextual Info: 514400JP/ZP-8/10/12 4 Megabit DRAM 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi H M 514400 is a C M O S dynam ic RAM organized 1,048,576 word x 4 bit. H M 514400 has realized higher density, higher perform ance and various functions by employing 0.6 /<m C M O S

Contextual Info: O K I Semiconductor MSC23240B/BL-XXBS20/DS20 2,097,152-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23240B / BL-xxBS20 /D S 2 0 is a fully decoded 2,097,152-w ord x 40-bit CM OS Dynamic Ran­ dom Access M em ory M odule com posed of twenty 4-M b DRAM s in SOJ M SM 514400B/BL packages

dg7-1

Contextual Info: SIEM ENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50/-60/-70 Advanced Inform ation • 1 048 576 w ords by 4-bit organization 0 to 70 'C operating tem perature • Fast access and cycle tim e RAS access time:

siemens FLH

Abstract: 514400 514400J-10 514400J-80 514400J
Contextual Info: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80

M514400

Abstract: m5144 hitachi 12.1 hm514400b M514400BS M514400B
Contextual Info: 514400B/BL Series 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it D y n a m ic R a n d o m A c c e s s M e m o ry T he H itach i H M 514400B is a CM O S dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b its. HM 514400B has realized higher density, higher perform ance and various functions by employing

Contextual Info: O K I Semiconductor MSC23236B/BL-XXBS24/DS24 2,097,152-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23236B / BL-xxBS24 /D S24 is a fully decoded 2,097,152-w ord x 36-bit CMOS Dynamic Ran­ dom Access Memory Module composed of sixteen 4-Mb DRAMs in SOJ M SM 514400B/BL packages and

3s132

Contextual Info: O K I Semiconductor MSC23S132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23S132B/BL-xxBS8/DS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Ran­ dom Access M emory M odule com posed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages

Contextual Info: HYUNDAI HY 514400 B S eries 1Mx4-bit CMOS DRAM PRELIMINARY DESCRIPTION The 514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. "Hie 514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM HYB 514400BJ-50/-60 Advanced Inform ation • 1 048 576 words by 4-bit organization • 0 to 70 °C operating tem perature • Fast Page Mode Operation • Performance: -50 -60 ^RAC RAS access time 50 60 ns fCAC CAS access tim e

Contextual Info: O K I Semiconductor MSC23236B/BL-XXBS24/DS24 2,097,152-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23236B/BL -xxBS24/D S24 is a fully decoded 2,097,152-word x 36-bit CMOS Dynamic Ran­ dom Access Memory M odule composed of sixteen 4-M b DRAM s in SOJ M SM 514400B/BL packages and

Contextual Info: O K I Semiconductor MSC23136B/BL-XXBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS Dynamic Ran­ dom Access Memory M odule com posed of eight 4-M b DRAMs in SOJ M SM 514400B/BL packages and

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

SMD BJ ET

Abstract: L60 SMD IC 1mx4 aram
Contextual Info: SIEMENS 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM HYB 514400BJ -60/-70/-80 HYB 514400BJL -60/-70/-80 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ‘ C operating temperature • Fast access and cycle time RAS access time:

bj 94 131- 6

Abstract: smd MARKING code AOC Q67100-Q756 Q67100-Q973 SMD MARKING code ASC smd marking BJ
Contextual Info: SIEM ENS 1 M x 4-Bit Dynamic RAM Low Power 1 M x 4-Bit Dynamic RAM HYB 514400BJ/BJL -50/-60/-70 A d v a n c e d In fo rm a tio n • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Fast Page Mode Operation • Performance: -50

Contextual Info: O K I Semiconductor MSC23S136B/BL-XXBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23S136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS dynamic Ran­ dom Access Memory module com posed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages and

Contextual Info: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23108B /B L -xxD S2 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of two 4-Mb DRAM s in SOJ M SM 514400B/BL packages mounted