514100BJ Search Results

Siemens MTD 95 A 08 N

Contextual Info: SIEM ENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 w ords by 1-bit organization • 0 to 70 “C operating tem perature • Fast access time RAS access time:

Contextual Info: SIEMENS 4Mx1-Bit Dynamic RAM Low Power 4Mx1-Bit Dynamic RAM HYB 514100BJ -60/-70/-80 HYB 514100BJL -60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • 4 194 304 w ords by 1-bit organization 0 to 70 "C operating tem perature

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

SIEMENS rwc 62

Abstract: Q67100-Q1029
Contextual Info: SIEM E N S 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ”C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ¿RAC

D0713

Abstract: siemens 10e 514100
Contextual Info: SIEM E N S 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 words by 1-bit organization • 0 to 70 “C operating temperature • Fast access time RAS access time:

IN60M

Contextual Info: SIEMENS HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM A d v a n c e d In fo rm a tio n • 4 194 3 0 4 w o rd s by 1 -b it o rg a n iz a tio n L o w p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

HYB514100

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAMHYB 514100BJ/BT-60/-70/-80 Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: SIEMENS 4Mx1-Bit Dynamic RAM Low Power 4Mx1-Bit Dynamic RAM HYB 514100BJ -60/-70/-80 HYB 514100BJL -60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • 4 194 304 words by 1-bit organization 0 to 70 "C operating temperature

WCs MARKING

Abstract: 514100BJ Q67100-Q759 Q67100-Q971 SMD MARKING CODE RAC code marking rah SMD MARKING code ASC
Contextual Info: 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15

514100

Abstract: hyb514100
Contextual Info: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ˚C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time

Q67100-Q765

Abstract: 514100
Contextual Info: SIE M E N S 4 M x 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 A d v a n c e d In fo rm a tio n • 4 194 304 words by 1-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time

023SbDS

Contextual Info: SIEMENS 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation ♦. Performance: -50 -60 50 60 ns o > o ?RAC RAS access time CAS access time

Contextual Info: SIEMENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 'C operating temperature • Fast Page Mode Operation • Performance: f R AC -50 -60 -70

HYB39S16400T

Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Contextual Info: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL

Q67100-Q2006

Abstract: Q67100-Q982 514100BJ
Contextual Info: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e

Q67100-Q2007

Abstract: Q67100-Q985
Contextual Info: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully

Contextual Info: SIEMENS 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 3141OOBJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast Page Mode Operation • Performance: ÍRAC RAS access time

L-SIM-72-14

Contextual Info: SIEMENS 8M X 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Advanced Inform ation • 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

Contextual Info: TopTech Semiconductors. Siemens DK> Siemens AG Österreich Postfach 326 1031 Wien 8 (01 71711-5661 El 1372-10 Fax (01) 71711-5973 Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vie. 3121 S (03) 4207111 02 30425 Fax (03) 4 2072 75 Siemens AG

Marking A2t smd

Contextual Info: SIEMENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 fRAC

Contextual Info: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ˚C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70