514100 Search Results

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ˚C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time

Contextual Info: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The 514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the 514100B/BL is OKI's CMOS silicon gate process technology.

514100A

Contextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated

Contextual Info: SIEM ENS 4M x 9-Bit Dynamic RAM Module HYM 94500S/-60/-70/-80 HYM 94500L/-60/-70/-80 Advanced Inform ation • • 4 194 304 words by 9-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle tim e (-70 version)

Contextual Info: TOSHIBA 514100ASJL/AFIL60/70/80 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The 514100A SJL/A FTL is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The 514100A SJL/A FTL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit

ZIP20-P-400

Abstract: msm514100c
Contextual Info: O K I Semiconductor MSM5141OOC/CL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514100C/CL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 514100C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The 514100C/CL is

514-120

Abstract: 514 transistor PA111 514-140 514230
Contextual Info: perm-o-pads TO-5 Mounts Material Specifications: Nylon, per ASTM D4066 PA111, UL Rated 94V-2 Oxygen Rating Index: Over 28% 514 Series Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X =

Nippon capacitors

Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-725A Z Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

hb56d436br

Abstract: HB56D436BR-6
Contextual Info: HB56D436BR/SBR-6B/7B/8B Preliminary 4,194,304-Word x 35-Sit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (514100CS) sealed in

hitachi sr 302

Contextual Info: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi 514100 is a CMOS dynamic RAM organized 4,194,304 word x

Contextual Info: 4,194,304 I'.'ORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DE S CRIPTION The 514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The 514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as

ASJ-10

Abstract: ATR10 ATR80
Contextual Info: - 230C M O S X Ä m £ tt £ CO -f- >• D y y ft tt TRAC max ns TRCY min (ns) TCAD min (ns) TAH min (ns) TP min ¡ns) n C 3 m R A M ( 4 1 9 4 TDH mir (ns) TRWC nin (ns) V D D or V C C (V) 4 X 1 ) Â m M HCÏ min (ns) 3 I DD max (mA) CL O CM 4 M I DD STANDBY

Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION T H E 514100A is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514410ASJ/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

Contextual Info: SIEM ENS HYB 514400BJ -60/-70/-80 HYB 514400BJL -60/-70/-80 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM Advanced Inform ation • • • • • • • • • • • • • 1 048 576 w ords by 4-bit organization 0 to 70 "C operating temperature

94500S

Abstract: 94500L
Contextual Info: SIEMENS 4 M X 9-Bit Dynamic RAM Module HYM 94500S/-60/-70/-80 HYM 94500L/-60/-70/-80 Advanced Information • 4 194 304 words by 9-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

HM514100

Abstract: HM514100BS
Contextual Info: HM5141OOB/BL Series 4,1 9 4 ,3 0 4 -w o rd x 1-b it D y n a m ic R a nd o m A c c e s s M em ory The Hitachi 514100B is a CMOS dynamic RAM o rganized 4 ,1 9 4 ,3 0 4 w ords x 1 bits. 514100B has realized higher density, higher performance and various functions by employing

MSM6388

Abstract: J380 1h 514100A M6588 MSM6588 MSM6691 MSM6691GS-2K m514100a 529A1
Contextual Info: ¡ Semiconductor MSM6691 ¡ Semiconductor MSM6691 DRAM Interface IC GENERAL DESCRIPTION DRAMs can be used for voice storage by connecting the MSM6691 with OKI's integrate R/W Read/Write ICs, the MSM6388, and the MSM6588. The MSM6691 translates the signals

HM514100

Contextual Info: 514100L Series Low Power Version 4,194,304-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION 514100UP Series The Hitachi 514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. 514100 has realized high density, higher performance and various func­