514100 Search Results

Contextual Info: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The 514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The 514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Siemens MTD 95 A 08 N

Contextual Info: SIEM ENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 w ords by 1-bit organization • 0 to 70 “C operating tem perature • Fast access time RAS access time:

Contextual Info: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher

M514100D

Contextual Info: 514100D Series 4,194,304-word x 1-bit Dynamic RAM HITACHI ADE-203-680 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HM 514100D is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. 514100D has realized higher density, higher performance and various functions by employing 0.8 (im CMOS process

Contextual Info: SIEMENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time

Contextual Info: SIEMENS 4Mx1-Bit Dynamic RAM Low Power 4Mx1-Bit Dynamic RAM HYB 514100BJ -60/-70/-80 HYB 514100BJL -60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • 4 194 304 w ords by 1-bit organization 0 to 70 "C operating tem perature

Contextual Info: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types

HM514100

Contextual Info: HM 514100JP/ZP-7-4,194,304-W ord x 1-Bit Dynam ic Random A ccess M em ory • DESCR IPTIO N HM514400JP Series The Hitachi 514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. 514100 has realized higher density, higher performance and various func­

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

514100J-80

Abstract: 514100j-10
Contextual Info: El SIEMENS f l5 3 5 b 0 5 0G2G140 1 E21SIEG S IE M E N S A K T I E N 6 E S E L L S C H A F 4M X 1-Bit Dynamic RAM 4 7 E 3> HYB 514100-80/-10 Advanced Information • • • • • • • • • • • 4 194 3 04 words by 1-bit organization Fast access and cycle time

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 4-M b DRAM s in SOJ M SM 514100B/BL packages, mounted

M514100

Abstract: E130155
Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N E R A L D ESC R IP T IO N The M SM 514100A /A L is a n e w g e n e ra tio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b r ic a te th e M SM 5 1 4 1 0 0 A /A L is O K I's CM O S silic o n g a te p ro cess

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

Contextual Info: O K I Semiconductor 514100C/CL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514100C /C L is a 4 , 1 9 4 ,3 0 4 -w o r d * 1-bit dynam ic RAM fabricated in OKI's C M O S silicon gate technology. The M SM 514100C /C L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal CM O S. The M SM 514100C /C L is

Contextual Info: O K I semiconductor MSC2340-XXYS9/KS9_ 4,194,304 Word x 9 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE G EN ERAL DESCRIPTION The Oki M SC2340-XXYS9/KS9 is a fully decoded, 4,194,304 word by 9 bit C M O S dynamic random access memory composed of nine 4Mb DRAM s in S O J M SM 514100JS . The mounting of nine S O Js

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

514100J

Abstract: 514100J-80 514100
Contextual Info: SIEM ENS 4M X 1-Bit Dynamic RAM HYB 514100-80/-10 Advanced Information • 4 194 304 words by 1-bit organization • Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514100-80 100 ns access time 190 ns cycle time (HYB 514100-10) • Fast page mode cycle time

SIEMENS rwc 62

Abstract: Q67100-Q1029
Contextual Info: SIEM E N S 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ”C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ¿RAC

D0713

Abstract: siemens 10e 514100
Contextual Info: SIEM E N S 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 words by 1-bit organization • 0 to 70 “C operating temperature • Fast access time RAS access time:

DS36

Contextual Info: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESCRIPTION The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-w ord x 36-bit CM OS Dynamic Random Access Memory M odule com posed of thirty-six 4-M b DRAM s in SOJ M SM 514100B packages mounted

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-word x 9-bit CM OS D ynam ic Random Access Memory Module com posed of nine 4-Mb DRAMs in SOJ M SM 514100B/BL packages, mounted

CA58

Abstract: THM94000S THM9400QL 11ITT
Contextual Info: 4,194,304 WORD S x 9 BIT D Y N A M I C R A M M O D U L E PRELIMINARY DESCRIPTION The THM 94000S/L is a 4,194,304 words by 9 bits dynam ic RAM module w hich assem bled 9 pcs of T C 514100J on the printed circuit board. The THM 94000S/L is optim ized for application to the system s which are required high density and

IN60M

Contextual Info: SIEMENS HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM A d v a n c e d In fo rm a tio n • 4 194 3 0 4 w o rd s by 1 -b it o rg a n iz a tio n L o w p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re