S23SBOS Search Results

pj 989

Contextual Info: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code

ABE 422

Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Contextual Info: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

BF256

Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
Contextual Info: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.

CU4032K275G

Abstract: CU4032K300G CU4032K30G CU4032K250G CU4032K40G CU4032K25G CU4032K14G CU4032K CU4032K11G CU4032K17G
Contextual Info: SIEMENS A K T I E N G E S E L L S C H A F bOE D • S23SbOS 0051405 346 « S I E Í SIEMENS SURFACE MOUNT METAL OXIDE VARISTORS ELECTRICA L SPECIFICATIONS CONTINUED MAXIMUM RATINGS (8 5 * C ) CONTINUOUS TR A N SIEN T A VER A G E AC PA RT NUMBER DC PO W ER

4 pin hall sensor

Abstract: 4 pin package hall sensor 137 hall SENSOR MINIATURE CIRCUIT BREAKER siemens KSY14 hall effect sensor 4 pin A 02 hall effect sensor 3 PIN hall effect sensor 175 hall sensor hall effect sensor for current measurement
Contextual Info: SIEMENS Hall Position Sensor KSY 14 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature package Low inductive zero component

Transistor BFR 97

Abstract: bfr 49 transistor BFR34A
Contextual Info: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1

siemens ts 4140

Abstract: slma PEB2040 TS01S HSCC "digital switching system" TI344
Contextual Info: SIEMENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS IC Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines

Contextual Info: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:

Contextual Info: fl2 3 S b 0 5 0 0 f ll0 7 f l ESO SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515A / 83C515A-5 Preliminary SAB 83C515A-5 SAB 80C515A • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

BFQ70

Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: SIEMENS TV-Stereo Processor TDA 6812-5 Preliminary Data Bipolar IC rm TDA6812Features • High quality stereo signal processing • High S/N ratio • I2C Bus • Clipping detector and clock generator • NICAM or AM sound inputs • Volume control • Universal audio interface for DOLBY, EQUALIZER,

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

MSC SDA

Abstract: SDA9092 DS011 DD011
Contextual Info: 1 -5 2 S IE H E N S A K T IE N G E S E LLS C H A F S IE D • fl2 3 S b G 5 QOMMSET 2 4 5 « S I E G SIEMENS Memory Output Interface SDA 9092 Preliminary Data MOS 1C Type Ordering code Package SDA 9092 Q67100-H8353 PL-CC-68 In conjunction with the integrated circuits MIIF Memory Input Interface MSC (Memory

Siemens PEB 2040

Abstract: Siemens PEB 2045 TS127 08 PLCC-40 CDIP40 D55A PEB2045 P 30B4 PL-CC-44 tsco4
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • S IE M E N S 623SbDS 0035^31 5 ■ ISIEG -T -7 5 -//' Memory Time Switch CMOS MTSC Preliminary Data PEB 2045 PEF 2045 CMOS 1C Type Ordering Code Package PEB 2045 P PEB 2045 C PEB 2045 N PEF 2045 P PEF 2045 C PEF 2046 N

Contextual Info: LH1521, LH1523 SIEMENS Dual 1 Form B Absolute M axim um Ratings Ta =25°C Stresses in excess of the Absolute M aximum Ratings can cause perm anent dam age to the device. These are absolute stress ratings only. Functional operation of the Symbol Test Conditions

DL 1416B

Abstract: 1416B garry DIP SOCKET garry socket dishwasher siemens siemens schematic codes DL1416B SN63 TP35 AN8080
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D S 2 3 5 b G 5 OGEbfl^b b « S I E G SIEM EN S D L 1416B ^ ' 37 .160" Red, 4-Digit 16-Segment Plus Decimal ALPHANUMERIC Intelligent Display With Memory/Decoder/Driver l l So 5 5? Package Dimensions in Inches mm ^ .1 u - 16*02

SAB82C206

Abstract: 82c206f 82C206
Contextual Info: 47E D • ÖE3SbOS 0031522 1 ■ SIEG SIEMENS AKTI ENGESELLSCHAF SAB 82C206 Integrated Peripheral Controller -r-'5'3r'b'S>-\5 P re lim in a ry • P rogram m able w a it states fo r the D M A cycle and internal register access • 8 MHz DMA clock • 16 Mbytes o f D M A address space

Contextual Info: SIEMENS BLUE LINE 3 mm T1 LED LB 3331 Vorläufige Daten / Preliminary Data Besondere Merkmale • • • • • • • klares, farbloses 3-mm Kunststoffgehäuse als optischer Indikator einsetzbar in SiC-Technologie gefertigt in der Spektroskopie einsetzbar

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

HD-11310

Abstract: hd11310 HD-11330 HD11330 1133R HD11330 R HD1133R HD1131R HD-1131R HD1131-R
Contextual Info: SIE M EN S A K T I E N G E S E L L S C H A F 47E D S IE M E N S • 3 E 3 5 bO S 0 0 2 7 0* H 7 « S I E 6 HD1131R/1133R s u p e r - r e d HD11310/11330 YELLOW HD1131Y/1133Y GREEN HD1131G/1133G red 0.51" 13 mm SEVEN SEGMENT NUMERIC DISPLAY _

inductor neosid

Abstract: CFWM 450 SIEMENS BST h 05 90 SMD CODE L01 45S15B sj27 PMB2430 SIEMENS BST F 05 8 PIN SMD IC L02 Neosid Inductor
Contextual Info: SIEMENS Narrowband FM Receiver PMB 2430 Preliminary Data Bipolar 1C Features • Double conversion heterodyne receiver with limiter/ demodulator Low current consumption Reduced external components Low-noise temperature compensated internal reference voltages