FI23SB05 Search Results

LG 3160

Abstract: LS3180-JM LS3180-K LY3180-HL LG3160
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF S IEM EN S 47E D • fi23Sb05 0G2713Ô 2 M S I E Ü t^ h z i suPÈR-RÈD YELLOW GREEN LS 3180 LY 3180 LG 3180 T1 3 mm WIDE ANGLE LED LAMP Package Dimensions mm Maximum Ratings FEATURES * Colors: Super-Red, Yellow, Green * Lens: Red Diffused, Yellow Diffused,

x16 3 marking -ddr -sdram -rimm -sram -flash -m

Abstract: CGY52 Q68000-A8615 mmic-amplifier 7CH150
Contextual Info: SIEMENS GaAs MM IC CGY 52 Datasheet * Two stages monolithic microwave 1C MMICAmplifier * All gold metallisation *C h ip fully passivated •O perating voltage range: 2.7 to 5 V *5 0 Q input / output ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families

Contextual Info: ô2 3 5 bD 5 00 34 L7 5 ö • SIEG H7E » SIE M EN S A K T I E N G E S E L L S C H A F “T ^ c\ - 0 > '3 - O TBC 2332 TBE 2335 Dual Operational Amplifier with Darlington Input Bipolar 1C Features • • • • • • • • • High input impedance Wide common-mode range

322120S-70

Abstract: HYB514400
Contextual Info: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

tda 2572

Abstract: tda 2050 equivalent TDA 1432
Contextual Info: SIEM ENS Clock Sync Generator SDA 9257 Preliminary Data MOS 1C Features • • • • • • • • • • All settings made by I2C Bus PLL lock-in behavior can be set to TV- or VCR mode Automatic clamping of CVBS input Provides all horizontal and vertical sync signals and

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

VOC sensor

Abstract: vbb resistor 45VTYP RXJ Series
Contextual Info: Preliminary data SIEMENS BTS 620 TWO CHANNEL PROFET Description PROFET R an intelligent power switch with integrated Two independent high-side switches Overtemperature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection 2

stm siemens

Contextual Info: SIEMENS 1300 nm Laser in Receptacle Package, Medium Power STM 51004X STM 51005X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring

smd lg diode

Abstract: Q62703Q1640 Q62703-Q1608 diodes siemens Q62703-Q1657 smd code LR S25000 diode s250 S250-D0 S250
Contextual Info: L I Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-Jf SIEMENS AKTIEN6ESELLSCHAF LEDs-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70

Contextual Info: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:

4015 IC circuit diagram

Abstract: 804 1NL SIEMENS capacitor uv Y6960 arm8
Contextual Info: SIEMENS DSR QPSK-Demodulator SDA6310 Prelim inary Data Features • • • • • • • • Internal reference voltage source. Autom atic gain control AGC with integrated AG C amplifier. O utput for adjustable delayed tuner AGC. O scillator circuitry M r VCO with external varicaps.

Contextual Info: SIEMENS TEMPFET BTS114A Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab ^ < 5 = r > \ 12 Pin Type BTS114A Vm 50 V 1 2 3 G D S h ftoKcn Package Ordering Code

Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

Siemens diode Ssi

Contextual Info: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vbs 800 V b 1.5 A ffDS on Package Ordering Code 8 £2 TO-220 AB C67078-S1318-A2 Maximum Ratings Symbol Parameter Values Unit A Continuous drain current

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

K4887-K4

Abstract: B25355-K167-K4 ws dvd 290
Contextual Info: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting

photoresistor LDR 1000

Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Contextual Info: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi­ nation of extremely high-intensity light em it­ ting diodes LED as emitters and specific photocell as detectors. Both elements are

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n

SAB-C501

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller SAB-C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/20/40 MHz operating frequency 8 K x 8 ROM SAB-C501 -1R only 256 x 8 RAM Four 8-bit ports

24C04 wp

Abstract: IA 942 EEprom program eeprom 24c04 6 Q67100-H3525 Q67100-H3526 Q67100-H3527 Q67100-H3531 Q67100-H3532 DAT200 of eeprom 24c04
Contextual Info: • û235bG5 OO^Ô^bM 1 3 3 SIEM ENS 4 K bit 512 x 8 bit Serial C M O S E E P R O M s, I 2C Synchro n o us 2-W ire Bus, Page Protection Mode SLx 24C 04/P Preliminary Features • Data EEPROM internally organized as 512 bytes and 32 pages x 16 bytes • Page protection mode, flexible page-by-page