BL70 Search Results

Contextual Info: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

PLCC IC le 9148

Abstract: 9152 sot-89 C3622 SFG450 60F10 la1832 and tuner pack N4040 FM TV Stereo Radio Receiver ICs transistor fp 1016 fm 1016
Contextual Info: MC13029A Advance Information Advanced Medium Voltage IF and C-QUAM AM Stereo Decoder with FM Amplifier and AM/FM Internal Switch C–QUAM AM STEREO ADVANCED MEDIUM VOLTAGE IF AND DECODER FOR E.T.R. RADIOS The MC13029A is a third generation C–QUAM stereo decoder targeted

taa 723

Abstract: DS16
Contextual Info: O K I Semiconductor MSC23232B/BL-XXBS16/DS16 2,097,152-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M SC 23232B/BL -xxBS16/D S16 is a fully decoded 2,097,152-word x 32-bit CM OS Dynamic Ran­ dom Access Memory Module composed of sixteen 4-M b DRAMs in SOJ M SM 514400B/BL packages

oa-1160

Abstract: MSC23136 2k240
Contextual Info: O K I Semiconductor M SC 23136B/BL-XXBS 12/DS 12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages and

LA1832M

Abstract: BL-70 MG46A Motorola C-QuAM LA1832 equivalent MC13028AD LA1832 MC13028AP MC145151 MC145151DW2
Contextual Info: Order this document by MC13028A/D MC13028A Advanced Wide Voltage IF and C-QUAM AM Stereo Decoder The MC13028A is a third generation C–QUAM stereo decoder targeted for use in low voltage, low cost AM/FM E.T.R. radio applications. Advanced features include a signal quality detector that analyzes signal strength,

AK5702VN

Contextual Info: [AK5702] AK5702 PLL & MIC-AMP内蔵4-Channel ADC 1 概 要 AK5702はマルチチャネル録音用に開発された4チャネル A/Dコンバータです。AK5702はマイクアン プおよびALC Auto Level Control 回路を内蔵していますので、マイクアレイアプリケーションに最適で

GM7IC4256

Abstract: 71c4256
Contextual Info: G M 7 1C 4 2 5 6 B /B L LG Semicon Co.,Ltd. 262,144 W ORDS x 4 BIT CMOS DYNAM IC RAM Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM 71C4256B/BL has realized higher density, higher performance and various functions by utilizing

murata sfe10.7ma

Abstract: KO387 2SK212E BFU450c la1265 B.P.F sny sfz450 BFU450CN sfz450b mitsumi variable coil 455KHz
Contextual Info: Ordering number : EN1820D LA1265 Monolithic Linear IC FM/AM Tuner of Electronic Tuning Type Features • Minimum number of external parts required. • Excellent S/N. • Local OSC with ALC. • Local OSC buffer. • Tuning indicator pin common with narrow-band stop signal and muting drive output .

Contextual Info: O K I Semiconductor MSC23132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23132B/BL-xxBS8/DS8 is a fully decoded 1,048,576-w ord x 32-bit CMOS D ynam ic R andom Access M em ory M odule com posed of eight 4-M b DRAM s in SOJ MSM51440QB/BL packages m o u n ted

Contextual Info: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23108B/BL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages mounted

Contextual Info: O K I Semiconductor MSC23240B/BL-XXBS20/DS20 2,097,152-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23240B / BL-xxBS20 /D S 2 0 is a fully decoded 2,097,152-w ord x 40-bit CM OS Dynamic Ran­ dom Access M em ory M odule com posed of twenty 4-M b DRAM s in SOJ M SM 514400B/BL packages

GM71C4256B

Abstract: MQ5A
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B/BL has realized higher density, higher performance and various functions fay utilizing advanced CMOS process technology.

GM71C4400B

Abstract: GM71C4400BJ GM71C4400 GM71C4100C GM71C4100 GM71C44 gm71c4400bz
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C4400B/BL is the new generation dynamic RAM organized 1,048,576 x 4 bit. GM71C4400B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The

JIS B 7512

Abstract: 2SC536 C1513 2sc930 LA1135 BL-70 BFU450CN YT-30202 LA-1500 sfp450h
Contextual Info: 注文コード No. N 1 2 7 2 G 半導体ニューズNo.N1272Fをさしかえてください。 LA1135 LA1135M モノリシックリニア集積回路 カーラジオホームステレオ用 AM チューナシステム 概要 LA1135,1135MはAM電子同調チューナ用に開発された高性能ICで、混変調特性を大幅に改善している。

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 4-M b DRAM s in SOJ M SM 514100B/BL packages, mounted

diagram of hi 3520

Contextual Info: O K I Semiconductor MSC23408B/BL-XXPS8 4,194,304-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23408B/BL-xxDS8 is a fully decoded 4,194,304-w ord x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514100B/BL packages m ounted

TT 104 N 14 KOF

Abstract: SC2313
Contextual Info: O K I Semiconductor MSC23136B/BL-xxBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and

Contextual Info: O K I Semiconductor MSC23236B/BL-XXBS24/DS24 2,097,152-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23236B / BL-xxBS24 /D S24 is a fully decoded 2,097,152-w ord x 36-bit CMOS Dynamic Ran­ dom Access Memory Module composed of sixteen 4-Mb DRAMs in SOJ M SM 514400B/BL packages and

Contextual Info: O K I Semiconductor MSM5110 OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-w ord x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

215730

Contextual Info: Index by P a rt N u m b e r Index Part* Type pg Part# Type 01.0001 B2N 215 02.0014 BL30N 216 050204 SP10AR-N/35 223, 257 08.0111 Mu 0.8d/M20 312 01.0002 B3N 215 02.0015 BL35N 216 050205 SP10AR-N/50 223,257 08.0112 Mu 0.8d/M24x2 312 01.0003 B4N 215 BL40N 216