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    416C256 Search Results

    416C256 Datasheets (1)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    416C256
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.23KB 1
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    416C256 Price and Stock

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    Bristol Electronics KM416C256BLT6 94
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    Samsung Semiconductor & Electro-Mechanics KM416C256DJ-6

    DRAM Chip FPM 4Mbit 256Kx16 5V 40-Pin SOJ
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    Bristol Electronics KM416C256DJ-6 20
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    Bristol Electronics KM416C256BJ-6 16 1
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    Bristol Electronics KM416C256BJ-6 14
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    Samsung Electro-Mechanics KM416C256BLT-6

    INSTOCK
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    Chip 1 Exchange KM416C256BLT-6 1,886
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    416C256 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    16C256

    Abstract: KM416C256DJ
    Contextual Info: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    1c256d256kx1640sojkm416c256dj+116c256 PDF

    Contextual Info: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    256kx16416c256dtb4142003055b PDF

    416c256

    Abstract: j5021
    Contextual Info: 1 2 3 4 5 6 7 8 BANK 0 2 MB 9 AA[0.8] AA[0.8] 9 VMD[0.63] VMD[0.63] +5V 2 1 (-CASAH) (-CASAL) GND 16 17 18 19 22 23 24 25 26 15 11 12 30 13 14 27 28 29 21 35 40 GND DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 2 3 4 5 7 8


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    416c256soj40a10p/na0603b+6vmd10vmd11vmd12vmd13vmd14j5021 PDF

    MITAC schematic

    Abstract: mitac 5033 Trident Cyber9385 CCS C TOUCHPAD CIRCUIT CLPD6701 MITAC SO-DIMM 144-pin trident schematic keyboard and touchpad schematic ha7 msd
    Contextual Info: 5033 Circuit Diagram Index Table Sheet# 01 02 03 04 05 06 07 08 09 10 11 12 13 Description Jumper Settings CPU MTXC Cache Memory Clock Synthesizer and Driver PIIX4 Primary IDE and G.Pad Connector Trident 9385 Video Memory Bank 0 LCD Connector PCMCIA Controller


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    ess1869sw501-1vmd43vmd44+16vmd45vmd46vmd47vmd48vmd49------------------------------------vmd50mitac schematicmitac 5033trident cyber9385ccs c touchpad circuitclpd6701mitacso-dimm 144-pintrident schematickeyboard and touchpad schematicha7 msd PDF

    Contextual Info: CMOS DRAM 416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s


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    km416c256llkm416c256ll-7130nskm416c256ll-8+4150nskm416c256ll-10100ns180ns PDF

    416C256

    Abstract: KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8
    Contextual Info: PRELIMINARY CMOS DRAM 416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 416C 256 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    km416c256416c25640-leadkm416c256-7+3km416c256-10km416c256jkm416c256-8 PDF

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


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    514260

    Abstract: 4C16256 IDCT NEC uPD 833 Philips SAA713 samsung i2s SAA7131 SCR PIN CONFIGURATION picture of samsung IC 9290 micron lable information
    Contextual Info: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    saa7131saa7131aiocs16n711dfl2t+95142604c16256idctnec upd 833philips saa713samsung i2sscr pin configuration pictureof samsung ic 9290micron lable information PDF

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


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    0512d------------------------------------0512dz86e04sony cxa1191m+9philips ecg master replacement guidefzk101yd 803 sgsfzk 101 siemenscmc 707 am radio receiverphilips ecg semiconductors master replacement guidecxa1191mym2612ecg semiconductors master replacement guide PDF

    mcac

    Contextual Info: KM41 6C256DT ELECTRONICS CMOS D R A M 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    6c256dt256kx256kx16km416c256dt+1mcac PDF

    KM416C256-7

    Contextual Info: PRELIMINARY CMOS DRAM 416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 6 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess M emory. Its design is optimized for high perform ance applications


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    km416c256130ns180ns40-lead+1km416c256-7 PDF

    Contextual Info: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    256kx1616c256dj40sojkm416c256dj+17rb414h PDF

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


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    km41c4000jkm41c4000z41c4000ukm41c4000lz+14km41c4001jkm41c40012km41c4002jkm41c40022km44c1ooojkm44c1000zkm41c4000ajkm44c1000az30 pin simmkmm584000akm41c4001az1mx4 soj1mx4 nibble4mx1 nibble PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


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    41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100 PDF

    416C256J

    Abstract: 416c
    Contextual Info: PRELIMINARY 416C256 CMOS DRAM 2 5 6 K X 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 6 C 2 5 6 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess Memory. Its design is optimized for high performance applications


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    km416c2566c256j416c256j416c PDF

    Contextual Info: 416C256LL CMOS DRAM 256K x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A ccess M em ory. Its de sig n is op tim ized fo r high pe rform ance ap p lica tio n s


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    km416c256llkm416c256ll-7km416c256ll-8km416c256ll-10+5100ns130ns150ns180ns416c256ll PDF

    Contextual Info: CMOS DRAM 416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung 416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    km416c256/l/sl256kxkm416c256/usl-7130ns+5km416c256/usl-8150nskm416c256/usl-10100ns180ns PDF

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


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    71c25653c25681c100071c1000+154c102481c425671c42564c425671c44004c4001nec d273241c1000412566264 sram44256 dramnec 2732nec 4217400814400texas instruments eprom 2732 PDF

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    km41c256pkm41c256jkm41c256zkm41c257p+13km41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c464ppe 8001a23c100123c1010km68512km41c256tfk 805tfk 001 PDF

    41C464

    Abstract: 41C258 41C1000 44C256C
    Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.


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    km41c256km424c256424c256akm424c257+6km428c128428c25641c46441c25841c100044c256c PDF

    Contextual Info: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    256kx16km416v256dj0g322tmqg322bs+27tb414200322bfci PDF

    Contextual Info: CMOS DRAM 416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung 416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    km416c256/l/sl256kxkm416c256/usl130ns+6km416c256/l/sl-8150nskm416c256/l/sl-10km416c256/l/sl-7100ns180ns PDF

    514260

    Abstract: NEC uPD 833 dorsch fifo buffer video audio multiplex full empty Philips SAA713 s3 924 video SAA7131 samsung i2s t1is horizonal sync interlaced
    Contextual Info: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG 1. SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    saa7131saa7131aiocs16n110fl2fa+9514260nec upd 833dorschfifo buffer video audio multiplex full emptyphilips saa713s3 924 videosamsung i2st1ishorizonal sync interlaced PDF

    ASC 12.288

    Abstract: SAA7131 416c256-7 ISO11172 SAA7151B SAA7191B 4C1625 4C16256 SCR PIN CONFIGURATION picture scw 84
    Contextual Info: Philips Semiconductors Preliminary specification Full MPEG1 video and audio decoder FMPEG 1. SAA7131 FEATURES Features of the FMPEG: • Fully ISO 11172-1, -2 and -3 compatible single chip MPEG1 video and audio decoder • Decodes a video and/or audio stream with the system layer or without a system layer (single bitstream mode)


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    saa7131asc 12.288416c256-7iso11172+6saa7151bsaa7191b4c16254c16256scr pin configuration picturescw 84 PDF