44V16 Search Results

Contextual Info: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: CMOS DRAM 44V16000B, 44V161OOB 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consum ption(Norm al or Low power) are

ICE ICC3

Abstract: 44v16100
Contextual Info: 44V16000A, 44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,

44v16100

Contextual Info: DRAM MODULE KM M 372 V 1 60 8 0AK1 /AS 2 16Mx72 Buffered DIMM (16Mx4 base) Revision 0.0 Nov. 1997 DRAM MODULE KM M 372 V 1 60(8)0AK1 /AS 2 Re v i s i on Hi s t or y Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM372V160(8)0AK/AS to KMM372V160(8)0AK1/AS2 caused by PCB revision .

Contextual Info: KM4 4 V 16 0 0 0 AK C MOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

ti727

Contextual Info: KM44V 16004AS ELECTRONICS CMOS DRAM 16M x 4 Bit CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

KM44V16104A

Abstract: 7t41hh a5e 104
Contextual Info: 44V16004A, 44V16104A CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data O ut M ode CM OS DRAM s. Extended Data Out Mode otters high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: KMM374F1680AK KMM374F1600AK DRAM MODULE KMM374F1680AK & KMM374F1600AK EDO Mode without buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F168 0 0AK is a 16M bit x 72 Dynamic RAM high density memory module. The

dc/SMD ad34a

Contextual Info: K M 4 4 V 16004AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

KM44V16104AK

Abstract: 44v16104
Contextual Info: KMM372F1600AK/AS KMM372F1680AK/AS DRAM MODULE KMM372F1600AK/AS & KMM372F1680AK/AS Fast Page with EDO Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, G ENER AL D ES C R IPTIO N FEATURES The Samsung KMM372F160 8 0A is a 16M bit X 72 Dynamic RAM high density memory module. The

44v16104

Contextual Info: 44V16004B, 44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al

KM44V16100A

Abstract: KM44V16000A
Contextual Info: 44V16000A, 44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page M ode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells w ithin the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,

Contextual Info: K M M 3 6 6 F 1 60 8 0B K3 DRAM MODULE 16Mx64 Unbuffered DIMM (16Mx4 base) Revision 0.0 Nov. 1997 -1 Rev. 0.0 (Nov. 1997) - K M M 3 6 6 F 1 60( 8) 0B K3 DRAM MODULE Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision .

km44v16004ak

Abstract: UG34
Contextual Info: KM44V 16004AK E LE C T R O N IC S CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

Contextual Info: 44V16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

44v16104

Contextual Info: KMM366F1680AK KMM366F1600AK DRAM MODULE KMM366F1680AK & KMM366F1600AK EDO Mode without buffer 16Mx64 DRAM DIMM based on 16Mx4, 8K & 4K Refresh, 3.3V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM366F168 0 0AK is a 16M bit x 64 Dynamic RAM high density memory module. The