KM48C124 Search Results

ra5e

Contextual Info: KM48C124 CMOS DRAM 128K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 131,072x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time 55, 60, or 70 and power consumption

Contextual Info: KM48C124 CMOS DRAM 128K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 131,072x 8 bit Extended Data Out CM O S DRAMs. Extended Data O ut offers high speed random access of m em ory cells within the sam e row. A ccess tim e 55, 60, or 70 and pow er consum ption

KM416C60-7

Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Contextual Info: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55

1mx1 DRAM DIP

Abstract: KM44V1000C KM41V4000CL
Contextual Info: FUNCTION GUIDE MEMORY ICS DRAM For Reference Org. Density 1M bit pow*«\ Supply jNPPNÍ 1Mx1 5V±10% 256KX 4 5V±10% KM44C2Ö6D# 128Kx8 5V±10% KM48C128# KM41C1ÖOOD# I ' 60/70/80 Fast Page P:18 Pin DIP (1Mx1) 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

Contextual Info: KM4 8 C 124DJ CMOS DRAM ELECTRONICS 128K x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 131,072x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time 55, 60, or 70 and power consumption

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

km44c2560

Abstract: KM48V2104B-6 KM44C16004A-5
Contextual Info: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8