KM48S2020 Search Results

km48s2020ct

Abstract: KM48S2020CT-G
Contextual Info: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.

Contextual Info: KM48S2020C CMOS SDRAM Revision History Revision ,4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.

KM48S2020AT

Abstract: KM48S2020AT-F km48s2020a H14s
Contextual Info: KM48S2020AT SDRAM 1M x8 B it x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. ■ LVTTL compatible with multiplexed address. ■ Dual Bank. • MRS cycle with address key programs. -.CAS Latency 1, 2, 3 -. Burst Length (1, 2, 4, 8 & Full page)

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

km48s2020ct

Abstract: KM48S2020CT-G
Contextual Info: KM48S2020C CMOS SDRAM 1M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S2020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­

KM48S2020bt

Abstract: KM48S2020BT-G XC5L KM48S2020b
Contextual Info: KM48S2020B CMOS SDRAM 1M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3 3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1,2 & 3 Burst Length (1, 2, 4, 8 & full page)

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

KM48S2020A

Abstract: km48s2020at K/A8-A10 050S53 1994 sdram 002G5 D02g DD2054 samsung AND 1994 AND sdram
Contextual Info: PRELIMINARY * KM48S2020A CMOS SDRAM 2M X 8 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEA TU RES - JED EC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse RAS. - W CBR cycle with address key programs. •Latency Access from column address

KM48S2020bt

Abstract: 48S2020 44-TS0P2 KM48S2020 48S20 km48s2020btg
Contextual Info: KM48S2020BT SDRAM ELECTRONICS 1M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

KM48S2020

Abstract: km48s2020ct KM48S2020CT G10 KM48S2020CT-G
Contextual Info: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.

CDC2509

Contextual Info: Preliminary KM M378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs FEATURE G ENER AL D ESCRIPTION • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

KMM374S403BTN-G0

Abstract: KMM374S403BTN-G2
Contextual Info: KMM374S403BTN NEW JEDEC SDRAM MODULE KMM374S403BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

KMM366S403BTN-G2

Abstract: KMM366S403BTN-G0
Contextual Info: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

TCC15

Contextual Info: K M 4 8 S 2 0 2 1B T SDRAM ELECTR ONICS 1M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

KMM466S203BT-F0

Abstract: KMM466S203BT-F2
Contextual Info: KMM466S203BT NEW JEDEC SDRAM MODULE KMM466S203BT S D R A M SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203BT is a 2M bitx 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.

KMM366S403CTL-GO

Contextual Info: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

U655

Contextual Info: KMM374S203CTL PC66 SDRAM MODULE KMM374S203CTL SDRAM DIMM 2Mx72 SDRAM DIMM with ECC based on 2Mx8,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S203CTL is a 2M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

KM48S2020CT-G10

Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
Contextual Info: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

CDC2509

Abstract: KM48S2020 KMM378S203CT-G0 KMM378S203CT-G8 KMM378S203CT-GH KMM378S203CT-GL MA3910
Contextual Info: Preliminary KMM378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

KMM374S403CTS-G8

Abstract: KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct
Contextual Info: PC100 Unbuffered DIMM KMM374S403CTS KMM374S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

km48s2020ct

Abstract: KMM374S403CTL-G0 KM48S2020
Contextual Info: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM374S203CTL-G0

Contextual Info: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM374S403CT

Abstract: KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39
Contextual Info: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.