1MX16 Search Results

K1S161611A

Abstract: K1S161611A-I
Contextual Info: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary

K1S1616B1A

Abstract: K1S1616B1A-I
Contextual Info: Preliminary UtRAM K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 6, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

s - ck5t

Abstract: CA52
Contextual Info: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

Contextual Info: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

1MX16

Abstract: CCIR601 CCIR656 PBGA388
Contextual Info: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

Contextual Info: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF

Contextual Info: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access

Contextual Info: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

642006EGM1G09TD

Abstract: DIMM 1998
Contextual Info: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM

Contextual Info: UG52W661 4 6GSG 16M Bytes (2M x 64) DRAM 168Pin DIMM based on 1M x 16 General Description Features The UG52W661(4)6GSG is a 2,097,152 bits by 64 DRAM module. The UG52W661(4)6GSG is assembled using 8 pcs of 1Mx16 1K/4K refresh DRAMs in 44-pin TSOP package,

MX29LV160CBTC-90

Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Contextual Info: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of

pc133 sdram

Abstract: HYM4V33100DTYG-75
Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one

Contextual Info: tVHITE MICROELECTRONICS 1Mx16 CMOS FPM Dynamic RAM WPD1M16-XTJX PRELIMINARY# PLASTIC PLUS FEATURES • Fast Access Time I rac : 70, 8 0 ,100ns PIN CONFIGURATION TOP VIEW ■ Power Supply: 5V±0.5V ■ Packaging Vcc C 1 DQO C 2 DQ1 C 3 DQ2 C 4 DQ3 C 5 Vcc C 6

Contextual Info: SMART SM5640230UUXUGU Modular Technologies March 31, 1997 16MByte 2M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56402300UXUGU SM56402301UXUGU SM56402308UXUGU SM56402309UXUGU

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Contextual Info: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at

16202

Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one

Contextual Info: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access

Contextual Info: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access

Contextual Info: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil