X16BITS Search Results

Contextual Info: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one

Contextual Info: HYM72V32M636T6 32Mx64, 16Mx16 based, PC133 DESCRIPTION The H Y M 72V32M 636T6 Series are 32M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 16M x16bits CM O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in Bpin TS SO P package on a 168pm glass-epoxy

A9 npn

Contextual Info: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynamic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write

Contextual Info: HYM71V16635AT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix HYM 71V16635AT6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAMs in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin glass-epoxy

Contextual Info: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: HYM76V4635HGT6 4Mx64, 4Mx16 based, PC133 DESCRIPTION The H ynix H Y M 76V 4635A T6 Series are 4M x64bits Synchronous D R AM M odules. T he m odules are com posed o f fo u r 4M x16bits C M O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EE PR O M in 8pin TS S O P package on a 168pin glass-epoxy

Contextual Info: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynam ic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write

cc1c

Abstract: 6655h
Contextual Info: HYM71V16655HCT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix H Y M 71V16655HC T6 Series are 16M x64bits Synchronous DRAM Modules. T he m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

ci5 5t

Contextual Info: HYM71V16635HCT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix H YM 71V16635HC T6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CMOS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TS SO P package on a 168pm glass-epoxy

cq60

Contextual Info: HYM71V8655AT6 8Mx64, 8Mx16 based, PC100 DESCRIPTION The H ynix HYM 71V8655AT6 Series are 8M x64bits Synchronous DRAM M odules. The m odules are com posed o f four 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TS SO P package on a 168pln glass-epoxy

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte

TC59SM

Contextual Info: TOSHIBA TENTATIVE TC59S M 816/08/04B FT/B FTL-70,-75f-80 TOSHIBA MOS DIGIDAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4.194.304-W ORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1 .0 4 8 .5 7 6 -W O R D S X 4 B A N K S x 16-BITS SYN C H R O N O U S D Y N A M IC R A M 2 ,0 9 7 ,1 5 2 -W O R D S X 4 B A N K S X 8 -B IT S SYN C H R O N O U S D Y N A M IC R AM

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

AMd 939 pinout

Abstract: pin diagram AMD Athlon 939 athlon 30474 939-Pin pin diagram AMD Athlon 64 939 939 pinout PS2251 638 pin micro PGA AMD Functional amd k9 pin
Contextual Info: AMD Functional Data Sheet, 939-Pin Package Publication # Issue Date: 31411 May 2005 Revision: 3.03 Advanced Micro Devices Trademarks AMD, the AMD Arrow logo, AMD Athlon, AMD Opteron, and combinations thereof, and 3DNow! are trademarks of Advanced Micro Devices, Inc.

TLCS-90

Abstract: 0P-61F "PWM Controllers" UC 3842 FMN5 lear layout of 4 channel 315 rf transmitter TMP91C820AF tlp 748 ah202f ay- 8500 system philips semiconductor data handbook
Contextual Info: Data Book 16bit Micro controller TLCS-900/L1 series TMP91C820AF Rev. 2.5 07/December/2001 contents - Contents -TLCS-900/L1 LSI DEVICES TMP91C820AF 1. 2. Outline and Device Characteristics Pin Assignment and Pin Functions 2.1 Pin Assignment Diagram

CogniBlox

Abstract: CogniBlox-4K
Contextual Info: CogniBlox-4K High Performance Pattern Recognition, 3D Stackable Module CogniBlox is a stackable module allowing the design of versatile, massively parallel pattern recognition architectures for high-performance cognitive computing, sensor fusion, video analytics, and more. It is composed of 4 CM1K chips 4096 neurons , a

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC59S6416AFT, TC59S6408AFT, TC59S6404AFT 1,048,576 WORDS X 4 BANK X 16 BITS 2,097,152 WORDS X 4 BANK X 8 BITS 4,194,304 WORDS X 4 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S6416FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x4-banks x16-bits and

Contextual Info: STA680 HD Radio baseband receiver Datasheet − production data Features • IBOC in-band on-channel digital audio broadcast signal decoding for AM/FM hybrid and all-digital modes ■ Dual-channel HD 1.5 for background scanning and data services ■ HD codec (HDC) audio decompression

29lv640

Abstract: CTS1B MC74HC125AD HEADER10X2 PDIUSBP11A M68SZ328ADS MC68SZ328 29lv640du 29LV640DU/A
Contextual Info: M68SZ328ADS Application Development System User’s Manual Revision 1.2 January 29, 2002 Motorola, Inc. M68SZ328ADS Application Development System User’s Manual Revision 1.2 Jan 29, 2002 Motorola reserves the right to make changes without further notice to any product herein to improve

AS4DDR264M72PBG

Abstract: AS4DDR232M72APBG
Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

AS4DDR264M72PBG

Abstract: H11M1
Contextual Info: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM