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    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: -16Mx4 with 2Banks 8Mx8 with 2Banks 4Mx16 with 2Banks 103 113 123 135 153 - Device Operations - It , . - . . -16Mx4 with 4Banks 8Mx8 with 4Banks 4Mx16 , 4Mx16 with 4Banks 255 265 275 285 E. 2Mx32 SDRAM (B-die) - Datasheets · KM432S2030BT "' 2Mx32 with , . . . 4Mx64 of 4Mx16 with 4Banks 8Mx64 of 8Mx8 with 4Banks 8Mx64 of 4Mx16 , . - - - . . . 4Mx64 of 4Mx16


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: ., 4Banks, 3.3V 8Mx8-bit, 4K Ref., 4Banks, 3.3V 4Mx16-bit , 4K Ref., 4Banks, 3.3V 4Mx16-bit , 4K Ref., 4Banks, 3.3V, ET_Part 4Mx16-bit , 4K Ref., 4Banks, 3.3V 2Mx32-bit, 4K Ref., 4Banks, 3.3V 2M x32-bit, 4K Ref , 635HG (L)T6 HYM7V65401 B(L)TQG H YM 76V8M 655HG (L)T6 DATA BOOK 1 4Mx64, 4Mx16 based, PC100, Normal Power & Low Power 4Mx64, 4Mx16 based, PC133, Normal Power & Low Power 4Mx64, 4Mx16 based, PC100, Low Power 8Mx64, 4Mx16 based, PC100, Normal Power & Low Power 8Mx64, 4Mx16 based, PC133, Normal Power & Low Power


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: 2Mx32 32Mx4 16Mx8 8Mx16 64Mx4 32Mx8 16Mx4 8Mx8 4Mx16 16Mx4 8Mx8 4Mx16 16Mx4 8Mx8 4Mx16 Org. 4Mx4 2Mx8 , *16pcs 2Mx8*9pcs 2Mx8*18pcs 4Mx16 *4pcs 4Mx16 *4pcs 8Mx8*8pcs 8Mx8*8pcs 4Mx16 *8pcs 4Mx16 *8pos 8Mx8*9pcs , 374S3323T 2Mx8*8pcs 2Mx8*9pcs 2Mx8*16pcs 2Mx8*18pcs 4Mx16 *4pcs 8Mx8*8pcs 4Mx16 *8pcs 8Mx8*9pcs 8Mx8*16pcs , *8pcs 1Mx16*8pos 4Mx16 *4pcs 8Mx8*8pcs 4Mx16 *8pcs 8Mx16*4pcs 8Mx16*8pcs 4Mx16 *8pcs 16M 4th 16M 4th 18M


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    2007 - 4MX16

    Abstract: No abstract text available
    Text: 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ Pin Identification , module. It consists of A0~A11 Address inputs 8pcs of 4Mx16 DRAMs assembled on the printed DQ0 , . 1 60ns 15ns 110ns 25ns 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ A , 0.913 E A 23.20 D D 1.291 C B 32.80 2 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ A0~A11 A0~11 DQ48~63 /RAS0 /WE /OE /RAS 4Mx16 /WE DRAM /OE


    Original     		PDF 4Mx16 TS8MES64V6EZ TS8MES64V6EZ 64-bit TS8MES64V6EV
    EM658160TS-4

    Abstract: EM658160 EM658160TS-5 e-tron
    Text: . EtronTech 4Mx16 DDR SDRAM EM658160 Block Diagram Row Decoder Column Decoder 1MX16 CELL , . 2002 EtronTech 4Mx16 DDR SDRAM EM658160 Pin Descriptions Table 1. Pin Details of EM658160 , . 2002 EtronTech 4Mx16 DDR SDRAM EM658160 VDD Supply Power Supply: +3.3V ±0.3V VSS , EM658160 4Mx16 DDR SDRAM Operation Mode Fully synchronous operations are performed to latch the , Confidential 5 Rev. 1.1 Jan. 2002 EtronTech EM658160 4Mx16 DDR SDRAM Mode Register Set


    Original     		PDF EM658160 300/285/250/200/166/143/125MHz 16-bit 4Mx16 EM658160TS-4 EM658160 EM658160TS-5 e-tron
    2003 - Not Available

    Abstract: No abstract text available
    Text: 168PIN PC100 Unbuffered DIMM 64MB With 4Mx16 CL3 TS8MLS64V8Z Description Placement The , TS8MLS64V8Z consists of 8pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and a 2048 bits , Inc 1 I 168PIN PC100 Unbuffered DIMM 64MB With 4Mx16 CL3 TS8MLS64V8Z Dimensions Side , Inc 2 168PIN PC100 Unbuffered DIMM 64MB With 4Mx16 CL3 TS8MLS64V8Z Pinouts: Pin Pin Pin , 4Mx16 CL3 TS8MLS64V8Z Block Diagram DQ0~DQ63 A0~A11, BA0,BA1 DQ0~DQ15 A0~A11, BA0,BA1 DQ0


    Original     		PDF 168PIN PC100 4Mx16 TS8MLS64V8Z TS8MLS64V8Z PC-100. 400mil 168-pin
    2007 - Not Available

    Abstract: No abstract text available
    Text: density memory module. The TS8MLE72V6Z consists of 8pcs of 4Mx16 bit DRAMs, 4pcs of 4Mx4 bit DRAMs and , ~A11 D0~D15 /RAS 4Mx16 /CAS DRAM /WE /OE A0~A11 D16~D19 /RAS 4Mx4 /CAS DRAM /WE /OE A0~A11 D20~D35 /RAS 4Mx16 /CAS DRAM /WE /OE B0,A1~A11 D36~D51 /RAS 4Mx16 /CAS DRAM /WE /OE B0,A1~A11 D52~D55 /RAS 4Mx4 /CAS DRAM /WE /OE B0,A1~A11 D56~D71 /RAS 4Mx16 /CAS DRAM /WE /OE A0~A11 D0~D15 /RAS 4Mx16 /CAS DRAM /WE /OE A0~A11 D16~D19 /RAS 4Mx4 /CAS DRAM /WE


    Original     		PDF TS8MLE72V6Z TS8MLE72V6Z 4Mx16 16bits 168-pin 608-word 72-bit 4Mx16
    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: /2Mx16 8Mx8/ 4Mx16 4Mx16 8Mx8 8Mx8/ 4Mx16 8Mx8/ 4Mx16 4Mx16 /2Mx32 8Mx8/ 4Mx16 8Mx8/ 4Mx16 8Mx8/ 4Mx16 8Mx8/ 4Mx16 4Mx16 /2Mx32 8Mx8/ 4Mx16 16Mx8/8Mx16 ' Features Extended Extended Extended Extended Extended


    OCR Scan     		PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    2006 - Not Available

    Abstract: No abstract text available
    Text: 32MB 144 PIN 60ns SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS4MES64V6EZ Pin Identification , . It consists of A0~A11 Address inputs 4pcs of 4Mx16 DRAMs assembled on the printed DQ0 , . 1 60ns 15ns 104ns 25ns 32MB 144 PIN 60ns SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT , 4Mx16 EDO DRAM 3.3VOLT TS4MES64V6EZ 4Mx16 DRAM /WE /OE /WE /OE 4Mx16 DRAM SDA , D0-D7 /RAS 4Mx16 DRAM DQ56-DQ63 /CAS7 DQ48-DQ55 /CAS6 /LCAS DQ40-DQ47 /CAS5 DQ32-DQ39


    Original     		PDF 4Mx16 TS4MES64V6EZ TS4MES64V6EZ 64-bit
    1998 - KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: 64M - 8Mx8 64M - 8Mx8 64M - 8Mx8 Fujitsu 64M - 4Mx16 Hitachi 64M - 4Mx16 Hyundai 64M - 4Mx16 LG GM72V66841CT-7J 9748 M5M4V64S30ATP-8 806 D4564841G5-A10-9JF 9812 , HM5264165TT-B60 9751 HY57V651620ATC10P 9803 pass all parameters tested 64M - 4Mx16 GM72V661641CT-7J 9806 pass all parameters tested Mitsubishi 64M - 4Mx16 pass all parameters tested NEC 64M - 4Mx16 Samsung 64M - 4Mx16 Toshiba 64M - 4Mx16 M5M4V64S40ATP-8 810


    Original     		PDF PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    48-pin TSOP I

    Abstract: 52-pin TSOP TSOP 48 LAYOUT R1WV6416RSD-5SI R1LV6416R R1LV3216RSD-5SI R1LV3216RSD-5SR automotive thyristor R1LV3216RSA-5SI R1LV3216RSA-5SR
    Text: 85°C R1WV6416RSD-5SR 3.3 V, 4Mx16 /8Mx8, 52-pin TSOP, 55 ns, 0°C to 70°C R1WV6416RSD-7SR 3.3 V, 4Mx16 /8Mx8, 52-pin TSOP, 70 ns, 0°C to 70°C R1WV6416RSD-5SI 3.3 V, 4Mx16 /8Mx8, 52-pin TSOP, 55 ns, -40°C to 85°C R1WV6416RSD-7SI 3.3 V, 4Mx16 /8Mx8, 52-pin TSOP, 70 ns, -40°C to 85°C R1WV6416RSA-5SR 3.3 V, 4Mx16 /8Mx8, 48-pin TSOP I, 55 ns, 0°C to 70°C R1WV6416RSA-7SR 3.3 V, 4Mx16 /8Mx8, 48-pin TSOP I , 70 ns, 0°C to 70°C R1WV6416RSA-5SI 3.3 V, 4Mx16 /8Mx8, 48-pin TSOP I, 55


    Original     		PDF R1WV6416R R1LV3216R 52-pin R1LV6416R 48-pin 48-ball 48-pin TSOP I 52-pin TSOP TSOP 48 LAYOUT R1WV6416RSD-5SI R1LV3216RSD-5SI R1LV3216RSD-5SR automotive thyristor R1LV3216RSA-5SI R1LV3216RSA-5SR
    2001 - Not Available

    Abstract: No abstract text available
    Text: HY5DV641622AT 64M( 4Mx16 ) DDR SDRAM HY5DV641622AT Revision 0.5 November 2001 Rev. 0.5 , . 64Mb ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT Revision History 2. Revision 0.5 (Nov. 01) 1 , (CL + BL/2) ticks of clock at 300/275Mhz Rev. 0.5 / Nov. 01 2 64Mb ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information , - 40 Rev. 0.5 / Nov. 01 3 64Mb ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT


    Original     		PDF HY5DV641622AT 4Mx16) 300/275Mhz 250/200Mhz 75V/2 183/166Mhz
    2007 - Not Available

    Abstract: No abstract text available
    Text: Side high density memory module. The TS8MLE72V6ZN A consists of 8pcs CMOS 4Mx16 bit and 4pcs , ~DQ15 /RAS 4Mx16 DRAM /WE /OE /RAS 4Mx16 DRAM /WE /OE 4Mx4 /RAS DRAM DQ0~DQ3 /WE /RAS DQ0~DQ15 /WE /OE /CAS /OE DRAM /UCAS /OE0 4Mx16 /RAS /LCAS /WE DRAM /UCAS /WE0 4Mx16 /LCAS /RAS 4Mx4 DRAM A0~A11 /UCAS , 4Mx16 DRAM /RAS /WE /OE /RAS3 /CAS0 /CAS1 /CAS2 /CAS3 /CAS1 /CAS4 /CAS5 CB0~CB3


    Original     		PDF TS8MLE72V6ZN TS8MLE72V6ZN 4Mx16 168-pin 608-word 72-bSDA 4Mx16
    EM7643SU16H

    Abstract: No abstract text available
    Text: Preliminary EM7643SU16H 4Mx16 Async. / Page StRAM Document Title 4M x 16Bit Asynchronous , EM7643SU16H 4Mx16 Async. / Page StRAM 4M x16 Bit Async./Page StRAM FEATURES GENERAL DISCRIPTION - , Connection 2 Rev. 0.0 Preliminary EM7643SU16H 4Mx16 Async. / Page StRAM FUNCTION BLOCK , WE OE UB LB CE1 CE CE2 3 Rev. 0.0 Preliminary EM7643SU16H 4Mx16 Async. / Page , 4 Rev. 0.0 Preliminary EM7643SU16H 4Mx16 Async. / Page StRAM DC CHARACTERISTICS(Ta = -25


    Original     		PDF EM7643SU16H 4Mx16 16Bit 100ns 120ns EM7643SU16H
    2001 - HY5DV641622AT

    Abstract: No abstract text available
    Text: HY5DV641622AT 64M( 4Mx16 ) DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr , . 64Mb ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief , - 41 Rev. 0.3 / Apr. 2001 2 64Mb ( 4Mx16 ) Double Data Rate SDRAM DESCRIPTION , DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 4Mx16 , TSOP-II interface Package Rev. 0.3 / Apr. 2001 3 64Mb ( 4Mx16 ) Double Data Rate SDRAM


    Original     		PDF HY5DV641622AT 4Mx16) 4Mx16 HY5DV641622AT
    bcr 16m

    Abstract: EMC646SP16J RBC CellularRAM Memory 4Mx16 flash
    Text: Preliminary EMC646SP16J 4Mx16 CellularRAM Document Title 4Mx16 bit CellularRAM Revision , questions, please contact the EMLSI office. 1 Preliminary EMC646SP16J 4Mx16 CellularRAM 64Mb , EMC646SP16J 4Mx16 CellularRAM Table of Contents Features , 24 25 25 26 27 28 28 28 28 29 31 35 Preliminary EMC646SP16J 4Mx16 CellularRAM , 60 61 Preliminary EMC646SP16J 4Mx16 CellularRAM List of Tables Table 1: Table 2: Table


    Original     		PDF EMC646SP16J 4Mx16 100ns 120ns bcr 16m EMC646SP16J RBC CellularRAM Memory 4Mx16 flash
    2002 - 4MX16

    Abstract: HY23V64100 mask rom 4MX16-Bit
    Text: 4MX16 BIT CMOS MASK ROM HY23V64100 Description The HY23V64100 high performance read only , 4MX16 BIT CMOS MASK ROM HY23V64100 Block Diagram A0~A21 X-PREDEC Y-PREDEC X-DECODER , OUTPUT CIRCUIT Rev0 Page 2 of 6 Q0~Q15 4MX16 BIT CMOS MASK ROM HY23V64100 Absolute Maximum , Typ ¡ VOH Min uA 10 uA 35 mA 4MX16 BIT CMOS MASK ROM HY23V64100 , CL=100pF 120 ns 50 60 ns 0 20 10 ns 0 20 10 ns ns 4MX16 BIT CMOS


    Original     		PDF 4MX16 HY23V64100 HY23V64100 100/120ns. 42DIP 100/120ns 100pF mask rom 4MX16-Bit
    1996 - 4Mx8 dram simm

    Abstract: No abstract text available
    Text: Functional Diagram REGE CKE0 CS0# DQM RAS# CAS# WE# BA0 A0~A10 CKE1 CS1# 4Mx16 Block 4Mx16 Block 4Mx16 Block 4Mx16 Block 4Mx8 Block R E G I S T E R : : : : : : : : : : JEDEC ECC 10/12/15ns 2, 3 & 4 1, 2, 4 , sides : : : Gold 6.051" x 1.750" Double-sided 4Mx16 Block 4Mx16 Block 4Mx16 Block 4Mx16 Block 4Mx8 Block DQ0~DQ15 DQ16~DQ31 DQ32~DQ47 DQ48~DQ63 DQ64~DQ71 DQ0~DQ71 , permits QWORD Write only. 2. Data is terminated using 10 series resistors. 3. Each 4Mx16 Block comprises


    Original     		PDF SM57208407UB6AU 32MByte 200-pin 4Mx8 dram simm
    Not Available

    Abstract: No abstract text available
    Text: Data Sheet 64Mbit ­ High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Description The Enhanced Memory Systems , Single 3.3V ± 5% Power Supply 54-pin TSOP-II (0.8mm pin pitch) · · · · · · · · Block Diagram ( 4Mx16 , . Revision 1.1 Page 1 of 9 64Mbit ­ High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Pin Assignments (Top View) Data Sheet 8Mx8 4Mx16 VDD DQ0 VDD NC DQ1 VSS NC DQ2 VDD NC DQ3 VSS NC VDD NC /WE /CAS /RAS /CS BA0 , . Page 2 of 9 Revision 1.1 Data Sheet 64Mbit ­ High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Pin


    Original     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-7 SM3604T-7
    1999 - Not Available

    Abstract: No abstract text available
    Text: Data Sheet 64Mbit ­ High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Description The Enhanced Memory Systems , pitch) · · · · · · · · Block Diagram ( 4Mx16 shown) ADDRESS BUFFERS ROW DECODER BA1 BA0 A , SDRAM 8Mx8, 4Mx16 HSDRAM Pin Assignments (Top View) Data Sheet 8Mx8 4Mx16 VDD DQ0 VDD NC DQ1 VSS , 64Mbit ­ High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Pin Descriptions Symbol CLK CKE Type Input Input , to change without notice. Revision 1.0 Page 3 of 9 64Mbit ­ High Speed SDRAM 8Mx8, 4Mx16


    Original     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-7 SM3604T-7
    EMC646SP16K

    Abstract: Burst CellularRAM Memory
    Text: Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Document Title 4Mx16 bit CellularRAM , 4Mx16 CellularRAM AD-MUX x16 Burst, Multiplexed Address/Data FEATURES - 16-bit multiplexed , Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Table of Contents Features , 28 29 30 32 36 Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX List of Figures , 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 Preliminary EMC646SP16K 4Mx16


    Original     		PDF EMC646SP16K 4Mx16 100ns 120ns EMC646SP16K Burst CellularRAM Memory
    1998 - KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Text: parameters tested pass all parameters tested Fujitsu 64M - 4Mx16 pass all parameters tested Hitachi 64M - 4Mx16 Hyundai 64M - 4Mx16 81F641642B-103FN 9805 MOO HM5264165TT-B60 9751 HY57V651620ATC10P 9803 LG 64M - 4Mx16 GM72V661641CT-7J 9806 pass all parameters tested Mitsubishi 64M - 4Mx16 pass all parameters tested NEC 64M - 4Mx16 Samsung 64M - 4Mx16 Toshiba 64M - 4Mx16 M5M4V64S40ATP-8 810 D4564163G5-A10-9JF 9803E9001 KM416S4030BT-GL 807 TC59S6416BFT


    Original     		PDF PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    1999 - SM3603

    Abstract: No abstract text available
    Text: 64Mbit ­ High Speed SDRAM (150 MHz) 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features , A(11:0) ADDRESS BUFFERS Block Diagram ( 4Mx16 shown) BANK A BANK B BANK C BANK D , (150 MHz) 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Pin Assignments (Top View) 8Mx8 4Mx16 , change without notice. Revision 1.0 64Mbit ­ High Speed SDRAM (150 MHz) 8Mx8, 4Mx16 HSDRAM , change without notice. Page 3 of 9 64Mbit ­ High Speed SDRAM (150 MHz) 8Mx8, 4Mx16 HSDRAM


    Original     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-6 54-pin SM3604T-6
    2001 - Not Available

    Abstract: No abstract text available
    Text: HY5DV641622AT 64M( 4Mx16 ) DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr , ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information , - 41 Rev. 0.3 / Apr. 2001 2 64Mb ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT , 4Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the , _2 400mil 66pin TSOP-II 3 64Mb ( 4Mx16 ) Double Data Rate SDRAM HY5DV641622AT PIN CONFIGURATION


    Original     		PDF HY5DV641622AT 4Mx16) 4Mx16
    1998 - KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: TMX664814A81A7ET A56877 9750KBD TC59S6408BFT-80 Fujitsu Hitachi Hyundai 64M - 4Mx16 64M - 4Mx16 64M - 4Mx16 pass all parameters tested pass all parameters tested pass all parameters tested LG Mitsubishi NEC Samsung Siemens Toshiba 64M - 4Mx16 64M - 4Mx16 64M - 4Mx16 64M - 4Mx16 64M - 4Mx16 64M - 4Mx16 81F641642B-103FN 9805 MOO HM5264165TT-B60 9751 HY57V651620ATC-10P 9803


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
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