JEP106 Search Results

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

Contextual Info: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.

r2a3

Abstract: r1a10 M1367 M4589
Contextual Info: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

TCK-1000

Abstract: D038 toshiba M7
Contextual Info: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TM4EN64KPU, TM4EN64NPU 4194304 BY 64-BIT TM8EN64KPU, TM8EN64NPU 8388608 BY 64-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 Organization - TM4EN64xPU-xx . , . 4194304 x 64 Bits - TM8EN64xPU-xx . . . 8388608 x 64 Bits

AT45DB081D

Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
Contextual Info: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency • • • • • • • • • • • • • • – SPI Compatible Modes 0 and 3 User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

Contextual Info: TM8SR64JPU, TM16SR64JPU TM8SR72JPU, TM16SR72JPU SYNCHRONOUS DYNAMIC RAM MODULES SMMS688 - AUGUST 1997 Organization: - TM8SR64JPU . . . .8 388 608 x 64 Bits - TM16SR64JPU . . 16 777 216 x 64 Bits - TM8SR72JPU . . . .8 388 608 x 72 Bits - TM16SR72JPU . . 16 777 216 x 72 Bits

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.

ic ap 6928

Abstract: sam4l SENSE16 10v regulator 7910 c QFN64 0x400A0000 swdp B-0100 embedded c programming of fibonacci series pulse width modulation tester diagram
Contextual Info: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling

energy tapping identifier wireless data acquisition

Abstract: interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram
Contextual Info: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

THMY25E10C70

Contextual Info: TOSHIBA THMY25E10C70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E10C is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808CFT DRAMs and PLL/Registers on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TO SH IB A THLY648031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT/BFTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 7 2 8 0 F 1 B E G is a 8,3 8 8 ,6 0 8 -w o rd by 7 2 -b it synchronous dynam ic RAM module consisting of

Contextual Info: TOSHIBA THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SH IB A THMY728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.