THMY721661 Search Results

THMY721661 Datasheets (7)

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Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
THMY721661BEG		Toshiba	16,777,216-Word BY 72-BIT SYNCHRONOUS DRAM MODULE	Scan	PDF	659.42KB	13
THMY721661BEG-10		Toshiba	DRAM Module, SDRAM, 128MByte Density, 3.3V Supply, DIMM Package	Scan	PDF	860.82KB	13
THMY721661BEG-10		Toshiba	16,777,216-Word BY 72-BIT SYNCHRONOUS DRAM MODULE	Scan	PDF	860.83KB	13
THMY721661BEG-10		Toshiba	16,777,216-Word BY 72-BIT SYNCHRONOUS DRAM MODULE	Scan	PDF	659.42KB	13
THMY721661BEG-80		Toshiba	DRAM Module, SDRAM, 128MByte Density, 3.3V Supply, DIMM Package	Scan	PDF	860.82KB	13
THMY721661BEG-80		Toshiba	16,777,216-Word BY 72-BIT SYNCHRONOUS DRAM MODULE	Scan	PDF	659.42KB	13
THMY721661BEG-80		Toshiba	16,777,216-Word BY 72-BIT SYNCHRONOUS DRAM MODULE	Scan	PDF	860.83KB	13

THMY721661 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661 beg-80 216-word 72-bit +2thmy721661beg tc59s6408bft/bftl	PDF
A1 D036 Contextual Info: TO SH IB A THMY721661EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661eg-10 216-word 72-bit thmy721661eg +3tc59s6408ft thmy721661 a1 d036	PDF
Contextual Info: TOSHIBA THMY721661 BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661 beg-80 216-word 72-bit +2thmy721661beg tc59s6408bft/bftl	PDF
Contextual Info: TOSHIBA THMY721661 EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661 eg-10 thmy721661eg 216-word +272-bit tc59s6408ft	PDF
Contextual Info: TO SH IB A THMY721661EG-10 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661eg-10 216-word 72-bit thmy721661eg +2tc59s6408ft 168-pin	PDF
EG 8010 Abstract: D018 D019 D032 THMY721661BEG 1d049 Contextual Info: TOSHIBA T H M Y 7 2 1661 BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661 beg-80 216-word 72-bit +7thmy721661beg tc59s6408bft/bftl eg 8010 d018 d019 d032 1d049	PDF
EG 8010 Abstract: D018 D019 D032 D051 THMY721661BEG Contextual Info: TOSHIBA THMY721661 BEG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	thmy721661 beg-80 216-word 72-bit +7thmy721661beg tc59s6408bft/bftl eg 8010 d018 d019 d032 d051	PDF
TC554161FTL-85L Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90 Contextual Info: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L	Original	tc551001csri-85l tc551001cst-55 tc551001cst-55l tc551001cst-70 +14tc551001cst-70l tc551001cst-85 tc551001cst-85l tc551001csti-70 tc551001csti-70l tc551001csti-85 tc554161ftl-85l tc55257dpl-70l tc55257dfl-70l tc55257dpl-85l tc55257dfi-85l tc551001cf tc55257dfl-85l tc58f400fti-90	PDF
toshiba toggle mode nand Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit	Original	64m128m 66mhz 100mhz 200mhz +15500/600mhz 800mhz 400mhz x16/x18x32 photopc550 toshiba toggle mode nand tc518128 tc518129 tc551001 equivalent 551664 tc518512 sgs-thomson power supply toggle ddr nand flash jeida 38 norm apple a5 chip	PDF