D038 Search Results

Contextual Info: N E C ELECTRONICS INC bSE D t.457S5S D03800Ö SSI « N E C E PRELIM INARY DATA SHEET NEC LASER DIODE MODULE NDL5603P ELECTRON DEVICE 1 310nm O P T IC A L FIBER C O M M U N IC A T IO N S InG aA sP P H A S E -S H IF T E D D F B -D C -P B H LASER D IO D E M O D U L E

UG-2828GDEDF11

Abstract: SSD1351U3 SSD1351 DFE2828CNCF38
Contextual Info: Product Specification Preliminary Part Name: OEL Display Module Part ID: UG-2828GDEDF11 Doc No.: SAS1-D038-A Customer: Approved by From: Univision Technology Inc. Approved by Univision Technology Inc. 8, Kebei RD 2, Science Park, Chu-Nan, Taiwan 350, R.O.C.

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

TCK-1000

Abstract: D038 toshiba M7
Contextual Info: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

PIC18F example code CAN bus

Abstract: 18f14k50 PIC18f external interrupt example codes PIC18F sleep mode example 3 phase pwm generator pic18f PIC18f clearing ram pic18f for 3 phase inverter pic 18f14k50 PIC18f example codes PIC18F45k20 examples
Contextual Info: PIC18F/LF1XK50 Data Sheet 20-Pin USB Flash Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41350D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

sound Processor acp 2371

Abstract: MAC198 SI 1340H MSP2400 ACP 2371 1030h vcu2133a SI 1020H dma2275 TPU2740
Contextual Info: MICRONAS INTERMETALL DMA 2275, DMA 2286 C/D/D2-MAC Descrambler MICRONAS Edition May 20, 1992 6251-330-1E DMA 2275, DMA 2286 Contents Page Section Title 4 4 4 1. 1.1. 1.2. Introduction General Information Environment 5 2. Chip Architecture 6 6 6 6 6 3. 3.1.

ecap

Contextual Info: AM1810 SPRS709B – NOVEMBER 2010 – REVISED DECEMBER 2011 www.ti.com AM1810 ARM Microprocessor For PROFIBUS Check for Samples: AM1810 1 AM1810 ARM Microprocessor 1.1 Features 12 • Highlights – 375-MHz ARM926EJ-S RISC Core – ARM9 Memory Architecture

Contextual Info: TMS320C6746 SPRS591C – NOVEMBER 2009 – REVISED OCTOBER 2011 www.ti.com TMS320C6746 Fixed/Floating-Point DSP Check for Samples: TMS320C6746 1 TMS320C6746 Fixed/Floating-Point DSP 1.1 Features 12 • Highlights – 375/456-MHz C674x Fixed/Floating-Point

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community AM1806 SPRS658F – FEBRUARY 2010 – REVISED MARCH 2014 AM1806 ARM Microprocessor 1 AM1806 ARM Microprocessor 1.1 Features 1 • 375- and 456-MHz ARM926EJ-S RISC MPU

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

lcd controller 2 x 16 HD44780

Contextual Info: AM1808 SPRS653C – FEBRUARY 2010 – REVISED DECEMBER 2011 www.ti.com AM1808 ARM Microprocessor Check for Samples: AM1808 1 AM1808 ARM Microprocessor 1.1 Features 12 • Highlights – 375/456-MHz ARM926EJ-S RISC Core – ARM9 Memory Architecture – Programmable Real-Time Unit Subsystem

0.5-4B

Abstract: 2322 156 239 sprufe8
Contextual Info: TMS320C6746 SPRS591C – NOVEMBER 2009 – REVISED OCTOBER 2011 www.ti.com TMS320C6746 Fixed/Floating-Point DSP Check for Samples: TMS320C6746 1 TMS320C6746 Fixed/Floating-Point DSP 1.1 Features 12 • Highlights – 375/456-MHz C674x Fixed/Floating-Point

ad5251

Contextual Info: FEATURES AD5251: Dual 64-position resolution AD5252: Dual 256-position resolution 1 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Nonvolatile memory1 stores wiper setting w/write protection Power-on refreshed with EEMEM settings in 300 µs typ EEMEM rewrite time = 540 µs typ

6283 ic

Abstract: SPRS658 AC97 AM1806 ARM926EJ-S CP15 H100 hd44780 lcd controller 7 day timer controller bit 3715
Contextual Info: AM1806 www.ti.com SPRS658 – FEBRUARY 2010 AM1806 ARM Microprocessor Check for Samples: AM1806 1 AM1806 ARM Microprocessor 1.1 Features 12 via software to save power Register 30 of each PRU is exported from the subsystem in addition to the normal R31 output of the PRU cores.

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.

OQ45

Abstract: D018 D019 D032
Contextual Info: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.

ra2b

Contextual Info: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.