OQ45 Search Results

tc 97101

Abstract: D472
Contextual Info: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out

TME 87

Abstract: 1ZD12 tme 126 30 oc9 002
Contextual Info: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based

Contextual Info: " H Y U H D A I — • HYM5V64404C K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V64404C K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V16404C in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy

Contextual Info: MITSUBISHI LSIs Some contents are subject to change without notice. MH1 S64CXJJ-12,-15 67108864-B IT 1048576-W Q RD BY 64-BIT SynchronousDRAM DESCRIPTION The MH1S64CXJJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1Mx16 Synchronous DRAMs in

Contextual Info: HYUNDAI HYM5V72A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 5V 72A 214A is a 2M x 72-bit EDO m ode C M O S DRAM module consisting of nine H Y51V 17804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board. 0 ln F and 0.01 uF

bt 1690 transistor

Abstract: bt 1696 lc 945 p transistor NPN TO 92 bt 1690 philips of bt 1696 bt 1696 transistor lc 945 p transistor C 3355 transistor transistor bt 667 transistor 2028
Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION <01 ' / SLE D • g BFQ51 711GflBb 0D454fc>7 421 B I P H I N PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF

CLAA141XB01

Abstract: 71-22T00-D03 TLR303 LP141X5 cy4h Z768 LP133X7 IK04 JC283 ht13x
Contextual Info: Schematic Diagrams Appendix B: Schematic Diagrams Mainboard 71-22T00-D03 Sheet 1 of 31 OVCCT H 0*3 635 l U ifl AMO S _ d A l i _AW L S _-£iA*2_AMU \ ;iA * . . \ _ AfcLUL V_ H M 2 _ AL2_ \ _ HAJL1G_Afctfe. _ K _ H A I l i t _ A tti\ . H A lL i. AkL

FS DMO 365 RN

Abstract: mxj A1 connector LS 2027 audio amp MA81C WDA42 lx4 d09 st3pc 13T4 0601N D1661
Contextual Info: Model : F17P R:1 Intel Pentium 4 LGA775 +PT880+VIA8235 C E PCB STACK UP LAY1 LAY 2 LAY 3 LAY 4 LAY 5 LAY 6 LAY 7 LAY 8 LAY 9 LAY10 TOP GND INI IN2 GND1 VCC IN3 IN4 GND2 BOTTOM Revision History A O R IG IN A L RE LEA SE fe . cCL V?, o . ^ •Pff' j L

Contextual Info: HYMA6V32730E14HGTG 32MX72, 3.3V, 4K Ref, EDO Description The HYMA6V32730E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in

Contextual Info: DRAM MODULE KMM364V41 OAK/AS KMM364V41 OAK/AS Fast Page Mode 4Mx64 DRAM DIMM , 2K Refresh, 3.3V G EN E R A L D ES C R IPTIO N FEATURES The Samsung KMM364V410A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V410A consists of sixteen CMOS