2013 - MICRON mcp
Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
Text: Parameter Die 256Mb VSS DQ[15:0] A[MAX:1] WAIT PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb .pdf - , 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30 , VCCQ (I/O) voltage: 1.7V to 3.6V Standy current: 65µA (TYP) for 256Mb 52 MHz continuous synchronous , ) command set compatible Common flash interface · Density and Packaging 56-lead TSOP package ( 256Mb only) 64-ball Easy BGA package ( 256Mb , 512Mb) QUAD+ and SCSP packages ( 256Mb , 512Mb) 16-bit wide
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256Mb
512Mb
256Mb/256Mb)
P30-65nm
P30-65nm)
JS28F256P30B/TFx,
RC28F256P30B/TFx,
PC28F256P30B/TFx,
RD48F4400P0VBQEx,
RC48F4400P0VB0Ex,
MICRON mcp
PC28F256P30B
PC28F256P
PC28F256P30BFF
PF48F4400P0VBQEF
PC28F256P30BFE
JS28F256P30BF
Micron 512MB NOR FLASH
PF48F
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2013 - js28f256p
Abstract: RC48F4400P0TB0EJ
Text: 256Mb and 512Mb ( 256Mb / 256Mb ), P33-65nm Features Micron Parallel NOR Flash Embedded Memory , Packaging â 56-lead TSOP package ( 256Mb only) â 64-ball Easy BGA package ( 256Mb , 512Mb) â QUAD+ and SCSP packages ( 256Mb , 512Mb) â 16-bit wide data bus ⢠Quality and reliabilty â JESD47 , current: 65µA (TYP) for 256Mb â 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667ad p33_65nm_MLC_ 256Mb-512mb .pdf - Rev. B 12/13 EN 1 Micron Technology, Inc
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256Mb
512Mb
256Mb/256Mb)
P33-65nm
P33-65nm)
RC28F256P33TFE,
RC28F256P33BFE,
RC28F256P33BFF,
PC28F256P33TFE,
PC28F256P33BFE,
js28f256p
RC48F4400P0TB0EJ
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2010 - PF38F4060M0Y3DF
Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
Text: 256Mb M PSRAM Uniform 1.8 1.8 Muxed x16 x16 LPCP - 56ball 11x8 mm 1Gb + 256SDR PF38F6070M0Y0BF 1Gb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 , PF38F5070M0Y0BE 512Mb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D- 105ball 9x11 mm 512MB + 256DDR MUX PF38F5070M0Y1EE 512Mb 256Mb M DDR Uniform 1.8 1.8 , 256Mb M DDR Uniform 1.8 1.8 Muxed x16 x16 X16SB - 165ball 9x11 mm 512Mb
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1024Mb
PF58F0062M0Y1BF
105ball
PF58F0033M0Y0BF
x1x16
80Ball
M36A0W5040B/
M36A0W5030B/
PF38F4060M0Y3DF
PF38F3040
PF38F5060M0Y0CF
m36w0r6050u
PF48F6000M0Y1BH
M36W0R5040
PF38F5070M0Y1EE
M36W0T5040
Pf38f3050m0y0Ce
PF38F3050M0Y3DF
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2013 - RC48F4400P0VB0E
Abstract: PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE
Text: 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30 , VCCQ (I/O) voltage: 1.7V to 3.6V Standy current: 65µA (TYP) for 256Mb 52 MHz continuous synchronous , ) command set compatible Common flash interface · Density and Packaging 56-lead TSOP package ( 256Mb only) 64-ball Easy BGA package ( 256Mb , 512Mb) QUAD+ and SCSP packages ( 256Mb , 512Mb) 16-bit wide , without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb and 512Mb ( 256Mb / 256Mb ), P30
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256Mb
512Mb
256Mb/256Mb)
P30-65nm
P30-65nm)
JS28F256P30B/TFx,
RC28F256P30B/TFx,
PC28F256P30B/TFx,
RD48F4400P0VBQEx,
RC48F4400P0VB0Ex,
RC48F4400P0VB0E
PC28F256P30BFF
MICRON mcp
pf48f4400p0vbqe
rc28F256P30TFE
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2013 - Not Available
Abstract: No abstract text available
Text: /T PF48F4400P0VBQEF 512Mb ( 256Mb / 256Mb ) PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb , 16 KWord Block 0 512Mb ( 256Mb / 256Mb ), World Wide x16 Mode PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb , 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory , and Packaging â 56-lead TSOP package ( 256Mb only) â 64-ball Easy BGA package ( 256Mb , 512Mb) â QUAD+ and SCSP packages ( 256Mb , 512Mb) â 16-bit wide data bus ⢠Quality and reliabilty â
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256Mb
512Mb
256Mb/256Mb)
P30-65nm
P30-65nm)
JS28F256P30B/TFx,
RC28F256P30B/TFx,
PC28F256P30B/TFx,
RD48F4400P0VBQEx,
RC48F4400P0VB0Ex,
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2013 - PC48F4400P0VB0EE
Abstract: No abstract text available
Text: PF48F4400P0VBQEF 512Mb ( 256Mb / 256Mb ) PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb .pdf - Rev. C 12/13 EN , 16 KWord Block 0 512Mb ( 256Mb / 256Mb ), World Wide x16 Mode PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb , 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory , and Packaging â 56-lead TSOP package ( 256Mb only) â 64-ball Easy BGA package ( 256Mb , 512Mb) â QUAD+ and SCSP packages ( 256Mb , 512Mb) â 16-bit wide data bus ⢠Quality and reliabilty â
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256Mb
512Mb
256Mb/256Mb)
P30-65nm
P30-65nm)
JS28F256P30B/TFx,
RC28F256P30B/TFx,
PC28F256P30B/TFx,
RD48F4400P0VBQEx,
RC48F4400P0VB0Ex,
PC48F4400P0VB0EE
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sandisk micro SD Card 2GB
Abstract: sandisk micro sd SanDisk SDHC kingston sd 2GB kingston micro sd sd card 4gb sandisk sandisk 4Gb micro sd sandisk SD Card 2GB data sheet kingston micro SD card sd card kingston 4gb
Text: 128-01-010 MEDIAFO SD Personal Storage Disc 128 128 SD 256MB list 256-01-001 SILICON , Ultra+ My Flash 60X 128 128 Mini SD 256MB list 256-01-001 SAMSUNG Mini SD PLEOMAX , Micro SD 256 128 My flash super 128 128 Micro SD 256MB list 256-01-003 A-DATA , 256MB list 256-01-001 SAMSUNG MMC PLEOMAX 256 256-01-002 PalmOne MMC Memory , RS_MMC 256MB list RS MMC PLEOMAX 256 RS_MMC 512MB list 512-01-001 Kingston RS MMC 512
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SDC-16M
SDC-32M
128MB
S02G-72-021
S032-81-021
S064-81-021
S128-81-021
128MB
S256-81-021
256MB
sandisk micro SD Card 2GB
sandisk micro sd
SanDisk SDHC
kingston sd 2GB
kingston micro sd
sd card 4gb sandisk
sandisk 4Gb micro sd
sandisk SD Card 2GB data sheet
kingston micro SD card
sd card kingston 4gb
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K4S641632k uc60
Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
Text: Refresh 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb , 8K/64ms 51 : 512Mb, 8K , 16 K4S561632H 256Mb J-die LC50/C60/C75 LL50/L60/L75 K4S560432H 4Banks 4K/64ms LVTTL K4S281632K 256Mb H-die Avail. 8M x 8 K4S280432K 4Banks Package 4M x 16 , compatibility with PC100. - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR , (II)*4 Now 256Mb H-die 4Banks K4S561632H UI60/I75 UP60/P75 16M x 16 LVTTL 8K
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4K/64ms
128Mb,
256Mb,
8K/64ms
512Mb,
80TYP
25TYP
K4S641632k uc60
K4S561632J-UC60
K4S280832K-UC75
K4S511632D-UC75
K4S560832H
K4S510832D-UC75
K4S281632K
M390S6450HUU
K4S561632J
K4S641632N
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1999 - Not Available
Abstract: No abstract text available
Text: 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 1 tRCD (ns , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 2 Micron Technology, Inc. reserves the right to change , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 5 78 80 82 83 84 85 86
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef8091e6d1
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512m pc133 SDRAM DIMM
Abstract: PC133 SDRAM registered DIMM 512MB samsung 1gb pc133 SDRAM DIMM 256Mb sdram dimm layout 64Mb samsung SDRAM sdram pcb layout M390S1723CTU-C75 M390S3253BTU-C75 M390S6450BTU-C75
Text: , 256MB , 512MB and 1GB. · The Best Solution for Slim / 1U Server System - Low Profile Registered DIMM , 1U RDIMM - Density: 128Mbyte & 256Mbyte - Status . The initial evaluation result shows no , . · x4 base 1U RDIMM - Density: 256Mbyte , 512Mbyte, 1Gbyte - Status . Under Evaluation . External , ( Composition ) # of Row (16Mb x8 * 9ea) 128Mb TSOP 1 (32Mb x4 * 18ea) 256MB (32Mx72) 1,200 mil 0.150 inch (3.810mm) 256Mb TSOP 1 (32Mb x8 * 9ea) 512MB (64Mx72) 1GB (128Mx72
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MPP-Feb-2001
1200mil,
PC133/PC100
1700mil/1500mil.
168pin
128MB,
256MB,
512MB
512m pc133 SDRAM DIMM
PC133 SDRAM registered DIMM 512MB samsung
1gb pc133 SDRAM DIMM
256Mb
sdram dimm layout
64Mb samsung SDRAM
sdram pcb layout
M390S1723CTU-C75
M390S3253BTU-C75
M390S6450BTU-C75
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2012 - PC133 registered reference design
Abstract: PPAP level submission requirement table 09005aef8091e6d1
Text: 0.8ns 0.8ns 0.8ns PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 1 Products , /decoder. PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 2 Micron Technology , . 88 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 3 Micron Technology , . 78 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 4 Micron Technology , . 79 81 83 84 85 86 87 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 5
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
256Mb
09005aef8091e6d1)
PC133 registered reference design
PPAP level submission requirement table
09005aef8091e6d1
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2011 - TN-48-05
Abstract: MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 MT48LC64M4A2TG PC133 registered reference design 63 ball Vfbga thermal resistance
Text: . 0.8ns 0.8ns PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN Setup CL = 2 CL = 3 Time , available at www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 2 Micron , . 86 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 3 Micron Technology, Inc , . 49 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 5 Micron Technology, Inc
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
54-pin
60-ball
54-ball
TN-48-05
MT48LC16M16A2
MT48LC32M8A2
MT48LC64M4A2
MT48LC64M4A2TG
PC133 registered reference design
63 ball Vfbga thermal resistance
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1999 - Not Available
Abstract: No abstract text available
Text: 20 -7E 133 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN , 256Mb_sdr.pdf - Rev. V 07/14 EN 2 Micron Technology, Inc. reserves the right to change products or , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 5 78 80 82 83 84 85 86
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PDF
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef8091e6d1
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2002 - Not Available
Abstract: No abstract text available
Text: ADVANCE 256Mb : x16 MOBILE SDRAM MOBILE SDRAM MT48V16M16LFFG, MT48H16M16LFFG 4 Meg x 16 , : 1. See page 58 for FBGA Device Marking Table. KEY TIMING PARAMETERS 256Mb SDRAM PART NUMBERS , (READ) latency 256Mb : x16 Mobile SDRAM MobileRamY26L_A.p65 Pub. 5/02 1 Micron Technology , MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS. ADVANCE 256Mb : x16 MOBILE SDRAM 256Mb SDRAM , 54-BALL FBGA GENERAL DESCRIPTION The 256Mb SDRAM uses an internal pipelined architecture to
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256Mb:
MT48V16M16LFFG,
MT48H16M16LFFG
192-cycle
54-ball,
MobileRamY26L
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2008 - ELPIDA mobile dram LPDDR2
Abstract: LPDDR2 SDRAM micron infineon power cycling
Text: : 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 1 Products and specifications discussed , marking decoder is available at www.micron.com/decoder. PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 3 Micron , . 94 94 94 94 95 95 95 95 95 95 96 96 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev , ) . 90 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 5 Micron
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256Mb:
MT46H16M16LF
MT46H8M32LF
09005aef834bf85b
ELPIDA mobile dram LPDDR2
LPDDR2 SDRAM micron
infineon power cycling
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1999 - Not Available
Abstract: No abstract text available
Text: 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 1 tRCD (ns , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 2 Micron Technology, Inc. reserves the right to change , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 5 78 80 82 83 84 85 86
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Original
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PDF
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef8091e6d1
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2001 - PC133 registered reference design
Abstract: No abstract text available
Text: 256Mb : x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC66-, PC100-, and PC133-compliant · , (READ) latency MT48LC16M16A2TG-75 256Mb : x4, x8, x16 SDRAM 256MSDRAM_D.p65 Rev. D; Pub. 6/01 , MICRON WITHOUT NOTICE. 256Mb : x4, x8, x16 SDRAM FBGA PIN ASSIGNMENT (Top View) 64 Meg x 4 SDRAM 8mm , are identicle to the listing of the 54-pin TSOP table on page 8. 256Mb : x4, x8, x16 SDRAM 256MSDRAM , specifications without notice. ©2001, Micron Technology, Inc. 256Mb : x4, x8, x16 SDRAM 256 Mb SDRAM PART
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256Mb:
PC66-,
PC100-,
PC133-compliant
192-cycle
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
MT48LC64M4A2FB-75
MT48LC64M4A2FB-7E
PC133 registered reference design
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2008 - Elpida LPDDR2 Memory
Abstract: elpida lpddr2 lpddr2 samsung* lpddr2 micron lpddr2 lpddr2 datasheet samsung lpddr2 Datasheet LPDDR2 SDRAM infineon power cycling sac105
Text: ] Column addressing 1 4K Row addressing PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 2 Micron Technology , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 3 Micron , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 4 94 94 94 94 , ) . 90 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 5 Micron
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256Mb:
MT46H16M16LF
MT46H8M32LF
60-ball
90-ball
09005aef834bf85b
Elpida LPDDR2 Memory
elpida lpddr2
lpddr2
samsung* lpddr2
micron lpddr2
lpddr2 datasheet
samsung lpddr2
Datasheet LPDDR2 SDRAM
infineon power cycling
sac105
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2012 - Not Available
Abstract: No abstract text available
Text: PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 1 Micron Technology, Inc , : www.micron.com/decoder. PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 2 Micron , . 87 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 3 Micron Technology , . 77 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 4 Micron Technology , . PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 5 78 80 82 83 84
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef848d99e8
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1999 - 09005aef8091e6d1
Abstract: PC133 registered reference design
Text: 20 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 1 Products and specifications , -ball FBGA 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q , . 85 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 4 Micron Technology, Inc , . 79 81 83 84 85 86 87 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 5 Micron
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef8091e6d1
PC133 registered reference design
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2010 - W3J2256M72-XPBX
Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
Text: Size 256MB 256MB 512MB 512MB 1GB 1GB Organization 32M x 64 32M x 72 64M x 64 64M x 72 , x 72 W3H128M72ER-XNBX DDR SDRAM MCPs Size 128MB 128MB 128MB 128MB 256MB 256MB 256MB 256MB 256MB 512MB Organization 64M x 16 64M x 16 16M x 64 16M x 72 32M x 64 32M x 64 32M x , Registered DDR SDRAM MCPs Size 128MB 256MB Organization 16M x 72 32M x 72 SSRAM MCPs Size 2MB , Size Organization Conventional 16MB 2M x 64 Page Mode 32MB 64MB 256MB 512MB 8M x 32 8M x
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W3J128M64G-XPBX
W3J128M72G-XPBX
W3J256M72G-XPBX*
W3J2256M72-XPBX*
W3H32M64E-XSBX
W3H32M72E-XSB2X
W3H64M64E-XSBX
W3H64M72E-XSBX
W3H128M72E-XSBX
W3H128M64E-XSBX
W3J2256M72-XPBX
W3J128M64G-XPBX
DDR1 512M
W3J128M72G-XPBX
256mb EEPROM Memory
ddr3 sdram chip 128mb
W3H128M72
w3j128m72
BGA NAND Flash
W72M64VB-XBX
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2008 - elpida lpddr2
Abstract: samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 MT46H16M16LF MT46H8M32LF sac105 micron LPDDR2 X32 elpida memory lpddr2
Text: ] Column addressing 1 4K Row addressing PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 2 Micron Technology , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 3 Micron , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 4 94 94 94 94 , . 50 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 5 Micron
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256Mb:
MT46H16M16LF
MT46H8M32LF
60-ball
90-ball
09005aef834bf85b
elpida lpddr2
samsung* lpddr2
Elpida LPDDR2 Memory
lpddr2
samsung lpddr2
MT46H16M16LF
MT46H8M32LF
sac105
micron LPDDR2 X32
elpida memory lpddr2
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1999 - 09005aef8091e6d1
Abstract: 63 ball Vfbga thermal resistance PC133 registered reference design 54 ball vfbga
Text: : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 1 Products and specifications discussed herein are subject , : www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 2 Micron Technology, Inc , . 86 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 3 Micron Technology, Inc , . 79 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 4 Micron Technology, Inc , . 80 82 84 85 86 87 88 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 5 Micron
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef8091e6d1
63 ball Vfbga thermal resistance
PC133 registered reference design
54 ball vfbga
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2003 - 75Z1
Abstract: B908
Text: : 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N, Core DDR: Rev. B 9/08 EN 1 Micron Technology , . PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N, Core DDR , : www.micron.com. PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N , .92 PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDRTOC.fm - 256Mb DDR: Rev. N, Core DDR , PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. N, Core DDR
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256Mb:
MT46V64M4
MT46V32M8
MT46V16M16
DDR400)
09005aef80768abb/Source:
09005aef80768abb
x4x8x16
256Mb
75Z1
B908
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THNCF1G02DG
Abstract: thncf128mdgi SD-M256 SD-M512 NAND Flash part number toshiba sandisk nand usb THNCF512MMG temperature control of 8096 sandisk Memory Stick 2gb SDM01G
Text: , 256MB , 512MB, 1GB 2Mbytes/s 7Mbytes/s New and fast growing card form factor designed primarily for consumer products SD High Speed 24mm x 32mm x 2.1mm 128MB, 256MB , 512MB 10Mbytes/s 10Mbytes/s New High , 20mm x 21.5mm x 1.4mm 32MB, 64MB, 128MB, 256MB 2Mbytes/s 4Mbytes/s The miniSD TM Memory card compact , 36.4mm x 3.3mm 32MB, 64MB, 128MB, 256MB , 512MB, 1GB, 2GB, 4GB 1,5Mbytes/s 6Mbytes/s Ideal for embedded and industrial designs. Table 2. CompactFlash Performance DENSITY PART NUMBER 128MB 256MB 512MB
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