2010 - PF38F4060M0Y3DF
Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
Text: X16D - 105ball 9x11 mm 1Gb + 128P MUX PF38F6060M0Y3DE 1Gb 128Mb M PSRAM Uniform , PF38F5060M0Y0CF 512Mb 128Mb M PSRAM Uniform 1.8 1.8 Paralell x16 x16 X16C - 107ball 8x11 mm 512Mb + 128PS MUX PF38F5060M0Y3CF 512Mb 128Mb M PSRAM Uniform , 512Mb 128Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D - 105ball 9x11 mm 512Mb + 128DDR MUX PF38F5060M0Y1EE 512Mb 128Mb M DDR Uniform 1.8 1.8
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1024Mb
PF58F0062M0Y1BF
105ball
PF58F0033M0Y0BF
x1x16
80Ball
M36A0W5040B/
M36A0W5030B/
PF38F4060M0Y3DF
PF38F3040
PF38F5060M0Y0CF
m36w0r6050u
PF48F6000M0Y1BH
M36W0R5040
PF38F5070M0Y1EE
M36W0T5040
Pf38f3050m0y0Ce
PF38F3050M0Y3DF
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TS128MDOM40V
Abstract: Transcend TS512MDOM40V HD10 HD11 HD15 TS256MDOM40V
Text: Transcend 40-Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB , products 40-Pin IDE Flash Modules are ideal for use in the · Storage Capacity: 128MB ~ 8GB , 0.008 1 Ver 1.7 Transcend 40-Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB Input Power Pin Assignments Pin No. Pin Name Pin Pin Pin No. Name No , -Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB Block Diagram With 1
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40-Piin
128MB
40-Pin
TS128MDOM40V
Transcend
TS512MDOM40V
HD10
HD11
HD15
TS256MDOM40V
|
2001 - MT48LC4M32B2P
Abstract: marking 6a2 smd 6A 1176
Text: 18 20 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 5 Micron Technology, Inc
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128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
marking 6a2 smd
6A 1176
|
2001 - MT48LC4M32B2P
Abstract: x32SDR x32s
Text: / decoder. PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 1 Products and specifications , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 2 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 3 Micron Technology, Inc , . 80 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 4 Micron Technology, Inc , . 41 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 5 Micron Technology, Inc
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PDF
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128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
x32SDR
x32s
|
SAMSUNG NAND Flash Qualification Report
Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die , whole without Samsung`s written approval. 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory , , Reliability test methods. This report has been revised the reliability and qualification data for the 128Mb , Information · Reliability Test Results · 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 , Bits 63TBGA 1.7V ~ 1.95V 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory Quality
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128Mb
industria1980
30pcs
48TSOP1
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
NAND "read disturb" Samsung
NAND Qualification Reliability
NAND Flash Qualification Reliability
NAND qualification
NAND read disturb
63-TBGA
K9F2808U0C-YCB0
K9F2808U0C-YIB0
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1999 - MT48LC16M8A2BB
Abstract: No abstract text available
Text: 2-2-2 15 15 15 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 1 , Decoder: www.micron.com/decoder PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 , . 85 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 3 Micron , . 76 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 4 Micron , . PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 5 78 80 81 82
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
4096-cycle
4096-cycle
09005aef84baf515
x4x8x16
MT48LC16M8A2BB
|
2001 - MT48LC4M32B2P
Abstract: No abstract text available
Text: 143 3-3-3 20 20 21 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 1 , MT48LC4M32B2F51 4 Meg x 32 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef80872800 128mb_x32_sdram.pdf , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 5 Micron Technology, Inc
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PDF
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128Mb:
MT48LC4M32B2
86-pin
90-ball
PC100-compliant
09005aef80872800
MT48LC4M32B2P
|
2001 - MT48LC4M32B2P
Abstract: TP 472
Text: 15 18 18 15 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 5 Micron Technology, Inc
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PDF
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128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
TP 472
|
K4S641632k uc60
Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
Text: Refresh 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb , 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K , K4S281632I 128Mb K-die Power (V) LVTTL K4S280432I 4Banks Refresh 8M x 8 K4S641632N 128Mb I-die Interface UC75 UL75 32M x 16 Note 1 : U : TSOP(II) (Lead-free) L : TSOP(II , compatibility with PC100. - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR , ) 1Q'08 128Mb I-die 4Banks K4S281632I UI60/I75 UP60/P75 8M x 16 LVTTL 4K/64ms
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4K/64ms
128Mb,
256Mb,
8K/64ms
512Mb,
80TYP
25TYP
K4S641632k uc60
K4S561632J-UC60
K4S280832K-UC75
K4S511632D-UC75
K4S560832H
K4S510832D-UC75
K4S281632K
M390S6450HUU
K4S561632J
K4S641632N
|
1999 - siemens a55
Abstract: siemens A70 marking b28 siemens a57 siemens b38
Text: . The 128 MB Direct Rambus RIMM module consists of eight 128Mb / 144Mb Direct Rambus DRAM (Direct RDRAMTM , 256banks on each 128MB module Gold plated edge connector pad contacts Serial Presence Detect (SPD) support , x18 128MB /144MB: 64Mb x16 64Mb x16 64Mb x16 64Mb x16 64Mb x18 64Mb x18 64Mb x18 64Mb x18 256MB/288MB: 128Mb x16 128Mb x16 128Mb x16 128Mb x16 128Mb x18 128Mb x18 128Mb x18 128Mb x18 256MB 256MB 256MB 256MB , -845 HYR1612830G-840 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1812820G-840 16 16 16 16 16 16 16 16 128Mb
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HYR16xx30/HYR18xx20G
128Mb/
144Mb
600MHz
800MHz
128MB,
HYR16xx30G/HYR18xx20G
siemens a55
siemens A70
marking b28
siemens a57
siemens b38
|
2002 - MO-161
Abstract: PC133 registered reference design MT4LSDT1664AIY-133
Text: accessed, and mode register bit M3 is ignored. i = 7 for 32MB; i = 8 for 64MB and 128MB. 11 Micron , 32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM Features SDRAM Unbuffered DIMM (UDIMM) MT4LSDT464A 32MB MT4LSDT864A(I) 64MB MT4LSDT1664A(I) 128MB For component data sheets, refer to Micron , Meg x 64), 128MB (16 Meg x 64) Single +3.3V power supply Fully synchronous; all signals registered , refresh mode: 64ms, 4,096-cycle refresh for 32MB and 64MB; 64ms, 8,192-cycle refresh for 128MB
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128MB
168-Pin
MT4LSDT464A
MT4LSDT864A
MT4LSDT1664A
168-pin,
PC100-
PC133-compliant
MO-161
PC133 registered reference design
MT4LSDT1664AIY-133
|
2001 - MT48LC4M32B2P
Abstract: No abstract text available
Text: 18 20 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 5 Micron Technology, Inc
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128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
|
2001 - Not Available
Abstract: No abstract text available
Text: PRELIMINARY 128Mb , 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES · x8/x16 organization · One hundred twenty-eight 128KB erase blocks ( 128Mb ) Sixty-four 128KB erase blocks (64Mb , Asynchronous Page Mode Reads: 150ns/25ns read access time ( 128Mb ) 120ns/25ns read access time (64Mb) 100ns/25ns , · Timing 150ns ( 128Mb ) 120ns (64Mb) 100ns (32Mb) · Operating Temperature Range Extended Temperature , only exists on the 64Mb and 128Mb devices. On the 32Mb, this pin/ball is a no connect (NC). 2. A23 only
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128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
100ns/25ns
|
2004 - Not Available
Abstract: No abstract text available
Text: 32MB, 64MB, 128MB (x64, SR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE Features · · · · · · · , (4 Meg x 64), 64MB (8 Meg x 64), 128MB (16 Meg x 64) Single +3.3V power supply Fully synchronous; all , Self Refresh Mode: 64ms, 4,096-cycle refresh for 32MB and 64MB; 64ms, 8,192-cycle refresh for 128MB , ) 64MB MT4LSDT1664A(I) 128MB Figure 1: 168-Pin DIMM (MO-161) Standard 1.00in. (25.40mm , , BA1) 128Mb (8 Meg x 16) 4K (A0-A11) 512 (A0-A8) 1 (S0#, S2#) 128MB 8K 4 (BA0, BA1) 256Mb (16 Meg x 16
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128MB
168-PIN
168-pin,
PC100-
PC133-compliant
096-cycle
192-cycle
128MB
|
|
tsop-56 samsung
Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
Text: Density Process Pkg-Pins 128Mb 128Mb 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 1Gb 1Gb 1Gb 2Gb 2Gb 4Gb , THNCF1G02DG THNCF1G02DGI 128MB 128MB 128MB 256MB 256MB 256MB 512MB 512MB 512MB 1GB 1GB 1GB , SD-M6404 SD-M1284 SD-F1284 SD-M2564 SD-F2564 SD-M5124 SD-F5125 SD-M01GS *1 Capacity 64MB 128MB 128MB 256MB 256MB 512MB 512MB 1GB MP MP MP MP MP MP MP MP Standard (blue) Standard , 128Mbit 0.175µm 8Mx16 2.7 BGA(9x12) MP TC51YNM716AXBN 128Mbit 0.175µm 8Mx16 1.8 BGA(9x12) CS *1
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576Mb
256Mb
tsop-56 samsung
TC58DVM72A1FTI0
tc58fvm5t2atg
TSOP1-48
THNCF1G02DG
THNCF1G02DGI
SD-M512
TC58NVG0S3AFTI5
THNCF128MMG
toshiba Nand flash bga
|
2002 - fw209
Abstract: No abstract text available
Text: 128Mb , 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES · x8/x16 organization · One hundred twenty-eight 128KB erase blocks ( 128Mb ) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks , /25ns read access time ( 128Mb ) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) · , 64-Ball FBGA OPTIONS · Timing 150ns ( 128Mb ) 120ns (64Mb) 110ns (32Mb) · Operating Temperature Range Commercial Temperature (0ºC to +85ºC) Extended Temperature (-40ºC to +85ºC) 128Mb , 64Mb, 32Mb
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128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
110ns/25ns
fw209
|
2004 - MT48LC8M16A2P
Abstract: 100-PIN 3CK10
Text: 16MB (x32, SR); 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U 16MB MT4LSDT832UD 32MB MT4LSDT1632UD 64MB MT4LSDT3232UD 128MB For the latest data , · 16MB (4 Meg x 32) , 32MB (8 Meg x 32), 64MB (16 Meg x 32), and 128MB (32 Meg x 32) · Utilizes , ,096-cycle refresh (15.625µs refresh interval); 128MB modules; 64ms, 8,192-cycle refresh (7.81µs , _4C4_8_16_32x32UDG.fm - Rev. A 12/04 EN 16MB 32MB 64MB 128MB 4K 4K 4K 8K 4 (BA0BA1) 4
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128MB
100-PIN
MT2LSDT432U
MT4LSDT832UD
MT4LSDT1632UD
MT4LSDT3232UD
100-pin,
PC133-compliant
MT48LC8M16A2P
3CK10
|
2001 - Not Available
Abstract: No abstract text available
Text: 128Mb : x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC100-, and PC133-compliant · Fully , Marking Table. *CL = CAS (READ) latency 128Mb : x4, x8, x16 SDRAM 128MSDRAM_E.p65 Rev. E; Pub. 5/01 , MICRON WITHOUT NOTICE. 128Mb : x4, x8, x16 SDRAM FBGA PIN ASSIGNMENT (Top View) 32 Meg x 4 8 x 16mm , Depopulated Balls 128Mb : x4, x8, x16 SDRAM 128MSDRAM_E.p65 Rev. E; Pub. 5/01 2 Micron Technology , , Inc. 128Mb : x4, x8, x16 SDRAM 128Mb SDRAM PART NUMBERS PART NUMBER MT48LC32M4A2TG MT48LC32M4A2FC
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128Mb:
PC100-,
PC133-compliant
096-cycle
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
60-pin,
11x13
|
2001 - Not Available
Abstract: No abstract text available
Text: 128Mb : x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM Features: ⢠⢠⢠⢠⢠⢠⢠â , FC2 Timing Types: PC100 (3-3-3) PC133 (3-3-3) -8A -75A Part number example: The 128Mb , .) PDF: 09005aef807827f6 / Source: 09005aef807825bd 128Mb SDRAM Rev: 11/29/2004 1 www.spectek.com , SpecTek 128Mb : x4, x8, x16 SDRAM 3.3V coincident with the READ or WRITE commands are used to select , is initiated at the end of the burst sequence. The 128Mb SDRAM uses an internal pipelined
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128Mb:
PC-100
PC133
096-cycle
optS80016LK7
S16008LK9
54-pin
60-ball
PC100
|
2004 - MT4VDDT1664HY-335
Abstract: MT46V32M16 MT46V16M16
Text: 64MB, 128MB , 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT4VDDT864H 64MB1 MT4VDDT1664H 128MB MT4VDDT3264H 256MB For component data sheets, refer to Micron's Web site , rates: PC2100, PC2700, or PC3200 · 64MB (8 Meg x 64), 128MB (16 Meg x 64), or 256MB (32 Meg x 64) · VDD , ); 7.8125µs ( 128MB , 256MB) maximum average periodic refresh interval · Serial presence-detect (SPD) with , discussed herein are subject to change by Micron without notice. 64MB, 128MB , 256MB (x64, SR) 200
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128MB,
256MB
200-Pin
MT4VDDT864H
64MB1
MT4VDDT1664H
128MB
MT4VDDT3264H
200-pin,
MT4VDDT1664HY-335
MT46V32M16
MT46V16M16
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1999 - TN-48-09
Abstract: PC133 registered reference design SMD marking B44 MT48LC16M8A2BB
Text: : 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 1 Products and specifications discussed herein are subject to , Meg x 8 16 Meg x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef8091e66d 128Mb_sdr.pdf , . 84 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 4 Micron Technology, Inc , . 78 80 82 83 84 85 86 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 5 Micron
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
4096-cycle
4096-cycle
09005aef8091e66d
TN-48-09
PC133 registered reference design
SMD marking B44
MT48LC16M8A2BB
|
1999 - micron marking MT48LC8M16A2B4
Abstract: MT48LC16M8A2BB
Text: ) CL (ns) 18 20 15 18 20 15 18 20 15 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 1 , x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1 , . 84 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 4 Micron Technology, Inc , . 78 80 82 83 84 85 86 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 5 Micron
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Original
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PDF
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
4096-cycle
4096-cycle
09005aef8091e66d
micron marking MT48LC8M16A2B4
MT48LC16M8A2BB
|
1999 - MT48LC16M8A2BB
Abstract: No abstract text available
Text: 15 15 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 1 Micron , Note: 1. FBGA Device Decoder: www.micron.com/decoder PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf , . 83 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 3 Micron Technology , . 77 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 4 Micron Technology , . PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 5 79 81 82 83 84 85
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Original
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PDF
|
128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
4096-cycle
09005aef8091e66d
x4x8x16
MT48LC16M8A2BB
|
2008 - 8M16
Abstract: MT48H4M32
Text: 3 5ns 5.4ns 1. CL = CAS (READ) latency PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev , available at www.micron.com/decoder. PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN , . 85 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 3 Micron , . 85 85 85 85 85 85 85 86 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN , . 42 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 5 Micron
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PDF
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128Mb:
MT48H8M16LF
MT48H4M32LF
09005aef832ff1ea
8M16
MT48H4M32
|
2008 - MT48H4M32
Abstract: MT48H4M32LF 8M16 MT48H8M16LF 4M32 Compound
Text: 5ns -75 104 133 8ns 5.4ns Note: PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf , /decoder. PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 2 Micron Technology , . 85 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 3 Micron , . PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 4 85 85 85 85 85 , . 42 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 5 Micron
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128Mb:
MT48H8M16LF
MT48H4M32LF
54-ball
90-ball
09005aef832ff1ea
MT48H4M32
MT48H4M32LF
8M16
MT48H8M16LF
4M32
Compound
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