DDR266 Search Results

DDR200

Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Contextual Info: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).

DDR200

Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
Contextual Info: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).

Contextual Info: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

DDR200

Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66
Contextual Info: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted

64MX64

Abstract: DDR266 DDR333 DDR400B PC2100 PC2700 PC3200
Contextual Info: P64M648HHJ - 512MB, P64M648IGJ-512MB, P128M6416HHJ –1GB SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR

Contextual Info: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

Contextual Info: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V58C2256 804/404/164 SG HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns

Contextual Info: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5D 5B 5 6 7 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5 ns 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5)

BA 5053

Contextual Info: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns 7.5ns Clock Cycle Time (tCK2.5)

V58C2512

Contextual Info: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

VDDSPD

Abstract: IC PIN CONFIGURATION OF 74 47
Contextual Info: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability

100-pin dimm

Abstract: SU5326485D8F0CU
Contextual Info: SU5326485D8F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5326485D8F0CG 64Mx32 256MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5326485D8F0CG 64Mx32 (256MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,

Contextual Info: SU5722885D8DRCU02 October 1, 2004 Ordering Information Part Numbers Description Module Speed SM5722885D8DRCG02 128Mx72 1GB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, ECC, 128Mx8 Based (Stacked - two 64Mx8), DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5

1376408-1

Contextual Info: SU5646485D8NRCU01 September 23, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NRCG01 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, Non-ECC, 64Mx8 Based (Stacked - two 32Mx8), DDR266A, 35.56mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5

G5723

Contextual Info: SU5726485D8D6CU July 19, 2006 Ordering Information Part Numbers Description Module Speed SM5726485D8D6CG 64Mx72 512MB , DDR, 184-pin DIMM, Unbuffered, ECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SG5726485D8D6CG 64Mx72 (512MB), DDR, 184-pin DIMM, Unbuffered, ECC,

Contextual Info: SU5726485D8DZCU02 October 5, 2004 Ordering Information Part Numbers Description Module Speed SM5726485D8DZCG02 64Mx72 512MB , DDR, 200-pin SODIMM, Unbuffered, PLL, 64Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5726485D8DZCG02

Contextual Info: SU5725645DHE8CU02 November 9, 2004 Ordering Information Part Numbers Description Module Speed SM5725645DHE8CG02 256Mx72 2GB , DDR, 184-pin DIMM, Registered, 256Mx4 Based (Stacked - two 128Mx4), ECC, DDR266A, 30.48mm, 22Ω DQ termination, Low Power. PC2100 @ CL 2.0, 2.5

Contextual Info: SM6472RDDR301 September 30, 2005 Ordering Information Part Numbers Description Module Speed SM6472RDDR301 64Mx72 512MB , DDR, 184-pin DIMM, Registered, ECC, 32Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SU5721685D4D0CU July 6, 2006 Ordering Information Part Numbers Description Module Speed SM5721685D4D0CG 16Mx72 128MB , DDR, 184-pin DIMM, Unbuffered, ECC, 16Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SG5721685D4D0CG 16Mx72 (128MB), DDR, 184-pin DIMM, Unbuffered, ECC,

Contextual Info: White Electronic Designs W3EG72255S-D3 -JD3 -AJD3 PRELIMINARY* 2GB-256Mx72 DDR SDRAM REGISTERED ECC FEATURES DESCRIPTION n Double-data-rate architecture n DDR200, DDR266 and DDR333; The W3EG72255S is a 256Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM

256mb ddr333 200 pin

Abstract: DDR266 DDR333 WV3EG6434S-BD4
Contextual Info: White Electronic Designs WV3EG6434S-BD4 ADVANCED* 256MB – 32Mx64 DDR SDRAM UNBUFFERED, w/PLL FEATURES DESCRIPTION DDR266 and DDR333 The WV3EG6434S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight

NT256D64S8HA0G

Abstract: NT256D64S8HA0G-7K PC2100
Contextual Info: NT256D64S8HA0G 256MB : 32M x 64 PC2100 / PC1600 Unbuffered DIMM 184pin Two Bank Unbuffered DDR SDRAM MODULE Based on DDR266/200 16Mx8 SDRAM Features • 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module • DRAM DLL aligns DQ and DQS transitions with clock transitions.