SM81600E
Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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s3c2440 pin
Abstract: S3C2440A s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP ARM920T EINT20 128MBYTE
Contextual Info: Embest Mini2440-I Processor Card Features z z z z z z z z z Dimensions: 65mm x 45mm Temperature: 0~+70℃ Samsung's S3C2440A microcontroller based on a 1.33V Static ARM920T CPU core with MMU 64Mbyte SDRAM 32MB/128MB compatible 128Mbyte Nand flash (support 256Mbyte for option)
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mini2440-is3c2440aarm920t64mbyte+1332mb/128mb128mbyte256mbyte12mhz200mhz32768hzs3c2440 pins3c2440a arm920ts3c2440samsung s3c2440samsung s3c2440 arm920t coretsxpeint20
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IS42S32400D
Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Contextual Info: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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M368L1624DTL
Contextual Info: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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SpecTek
Abstract: S16008 IDD8 S80016LK7TW-8A 54-PIN S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232
Contextual Info: 128Mb: x4, x8, x16 SDRAM 3.3V ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vdd = 3.3V ± 10%V, Temp. = 25° to 70 °C Supply Current OPERATING CURRENT: ACTIVE mode, burst = 1, READ or WRITE, tRC > tRC MIN , one bank active, CL=3 STANDBY CURRENT: POWER-DOWN mode, CKE = LOW,
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128mbsyms80016lk7s16008lk954-pin+1260-ballpc100pc133s80016lk7tw-8a09005aef807827f6specteks16008idd8s40032lk8s80016lk754pin tsop sdramma3232
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M366S0924ETS-C7A
Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Contextual Info: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002
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K4S560832E
Abstract: K4S561632E
Contextual Info: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004
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DDR200
Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Contextual Info: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).
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MT48LC4M32B2P
Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Contextual Info: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive
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SCANBE
Abstract: SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604
Contextual Info: MVME2300 TM VME Processor Modules ♦ PowerPC 603 or PowerPC 604™ 32-bit microprocessor ♦ L1 cache–16KB/16KB PowerPC 603 or 32KB/32KB PowerPC 604 ♦ 16MB to 128MB of on-board ECC DRAM ♦ Up to 1MB socketed Flash for on-board firmware or user-specified requirements
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NT5DS8M16FS-5T
Abstract: NT5DS8M16FS-6K NT5DS8
Contextual Info: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T
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Nanya nt5ds8m16fs
Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
Contextual Info: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8
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NT5DS8M16FS-5T
Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
Contextual Info: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T
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NT5SV8M16FS
Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
Contextual Info: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •
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K4R271669F
Contextual Info: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4S280432F
Abstract: K4S281632F
Contextual Info: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History
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K4S280432C
Abstract: K4S280432D
Contextual Info: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM Revision History Revision 0.0 Mar., 2001
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K4R271669E
Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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AY-133
Abstract: BA1U15 mt18lsdt3272ag10 168-PIN MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B
Contextual Info: 128MB x72, ECC, SR , 256MB (x72, ECC, DR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT9LSDT1672A(I) – 128MB MT18LSDT3272A(I) – 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features • •
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k4h561638f
Abstract: DDR266 DDR333 ECC SODIMM
Contextual Info: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.1 August, 2003 Rev. 1.1 August 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release
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DELL inspiron power supply diagram
Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
Contextual Info: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for
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DDR333
Abstract: DDR400 K4H281638E-TCCC
Contextual Info: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.3 Rev. 1.3. September. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)
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MT4LSDT1664
Abstract: MT4LSDT464 MT4LSDT864 MT4LSDT1664HG-133B1 HY10
Contextual Info: 32MB, 64MB, 128MB x64, SR 144-PIN SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT464(L)H(I) – 32MB MT4LSDT864(L)H(I) – 64MB MT4LSDT1664(L)H(I) – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules
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K4S281632F
Abstract: m464s1724f K4S281632
Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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