IDD8 Search Results
IDD8 Price and Stock
Analog Devices Inc LT3650IDD-8.2#PBFBattery Management Hi V 2 Amp Mono 2-Cell Li-Ion Bat Chr |
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LT3650IDD-8.2#PBF | 207 |
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LT3650IDD-8.2#PBF | 11,440 |
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Analog Devices Inc LT3650IDD-8.4#PBFBattery Charger IC Lithium Ion/Polymer 8.4V 12-SON Tube |
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LT3650IDD-8.4#PBF | 115 | 1 |
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LT3650IDD-8.4#PBF | 10,714 |
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Analog Devices Inc LT3650IDD-8-4-PBF |
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LT3650IDD-8-4-PBF | 12,010 |
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Analog Devices Inc LT3650IDD-8-2-TRPBF |
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LT3650IDD-8-2-TRPBF | 10,700 |
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Analog Devices Inc LT3650IDD-8.2#TRPBFPower Supply Support Circuit, Adjustable, 1 Channel, PDSO12 |
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LT3650IDD-8.2#TRPBF | 10,434 |
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IDD8 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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mpc5566
Abstract: MPC5566MZP80 mpc5566mzp132 MPC5566MVR144 spc5566 mpc5566mzp144 MPC5566M MPC5566 instruction set MPC556 G38-87
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mpc5566mpc5566mzp80mpc5566mzp132mpc5566mvr144+6 | |
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology |
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pd48288209288m-bit432-wordpd48288218+1 | |
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Contextual Info: Preliminary User’s Manual V850ES/JF3-L 32-bit Single-Chip Microcontrollers Hardware PD70F3735 μPD70F3736 Document No. U18952EJ1V0UD00 1st edition Date Published February 2008 N 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U18952EJ1V0UD |
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v850es/jf3-l32-bitpd70f3735pd70f3736+3 | |
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Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. |
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m474b5173bh0m474b1g73bh0204pin78fbga+3 | |
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Contextual Info: Preliminary User’s Manual V850ES/SG2 32-Bit Single-Chip Microcontroller Hardware µPD703262HY µPD703263HY µPD70F3263HY µPD703272HY µPD703273HY µPD70F3273HY µPD703282HY µPD703283HY µPD70F3283HY Document No. U17644EJ1V0UD00 1st edition Date Published September 2005 N CP(K) |
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v850es/sg232-bitpd703262hypd703263hy+6 | |
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Contextual Info: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual |
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240-pinmt18kdf51272pdzpc3-12800pc3-10600+4 | |
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Contextual Info: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module |
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240-pinmt18jsf1g72pzpc3-14900pc3-12800+5 | |
MICRON BGA PART MARKINGContextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate |
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288mbmt49h32m9mt49h16m18mt49h8m36+3 | |
SpecTek
Abstract: S16008 IDD8 S80016LK7TW-8A 54-PIN S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232
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128mbsyms80016lk7s16008lk954-pin+12 | |
ba1sContextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data |
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is43lr32400e32bitsfigure3890ball+4 | |
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Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010E *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V. |
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mn101c457qfp044-p-1010e | |
PA120
Abstract: PC123 Series COM161 NJU6825
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nju6825162common128rgb096-color+5 | |
MTI BDContextual Info: ADVANCE 8, 16 MEG x 72 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872A, MT18VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • 184-pin dual in-line memory module DIMM • Utilizes 100 MHz and 133 MHz DDR SDRAM |
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mt9vddt872amt18vddt1672a184-pin128mb+1 | |
k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
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k4b2g1646q96fbgaddr3 2133k4b2g1646q-bck0+1 | |
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MPC5533
Abstract: mpc5554 emios MPC500 MPC5500 MPC5534 MPC565
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mpc5533mpc5534mpc5554 emiosmpc500+2 | |
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Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. |
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m471b5173bh0m471b1g73bh0204pin78fbga+3 | |
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Contextual Info: TinyPowerTM A/D Type Smart Card OTP MCU with DAC, ISO 7816 and USB Interfaces HT56RB27 Revision: 1.20 Date: April 26, 2013 Contents Table of Contents Technical Document .7 Features .7 |
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ht56rb27 | |
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Contextual Info: TinyPowerTM A/D Type with LCD 8-Bit OTP MCU HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 Revision: V1.40 Date: ���������������� October 31, 2013 HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 TinyPowerTM A/D Type with LCD 8-Bit OTP MCU |
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ht56r62/ht56r65ht56r642/ht56r644/ht56r654/ht56r656 | |
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Contextual Info: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM |
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ht67f30/ht67f40/ht67f50/ht67f60 | |
NUC100LE3AN
Abstract: NuMicroTM NUC100 series Technical Reference Manual NUC100RE3AN NUC100LD1BN NUC100RC1BN ARMv6-M NUC100LD2BN NUC100RD1BN 5 pin LDO IC - pd11 NUC100LC1BN
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nuc10032-bitnuc100le3annumicrotm nuc100 series technical reference manual+8 | |
NUC122ZC1AN
Abstract: LQFP-64 footprint NUC122LD2AN QFN footprint
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nuc12232-bitnuc122zc1anlqfp-64 footprint+2 | |
SGCT
Abstract: sgm switch MSM7586-01TS-K MSM7586-03TS-K P600 P900 TQFP100-P-1414-0 mcu dtmf generator
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e2u0034-28-82msm7586-01/03msm7586tqfp100-p-1414-0+7 | |
LA 7673
Abstract: amplifier b7 6368 LA 7830 k 717 PA120 NJU6825 NJU6825CJ 128xR display 7 seg
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nju6825162-common4096-color128xrgb+10 | |
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Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4 |
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w94ad6kbw94ad2kba01-004 | |