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    09005AEF809F284B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MICRON BGA PART MARKING

    Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		288mbmt49h32m9mt49h16m18mt49h8m36+309005aef80a41b46/source09005aef809f284bmicron bga part marking PDF

    09005aef809f284b

    Contextual Info: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288mbmt49h8m36mt49h16m1809005aef80a41b46/zip+109005aef809f284b PDF

    MICRON BGA PART MARKING

    Abstract: NF 034 T6N 700 MT49H16M18
    Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		288mbmt49h32m9mt49h16m18mt49h8m36+509005aef80a41b46/source09005aef809f284bmicron bga part markingnf 034t6n 700 PDF

    MICRON BGA PART MARKING

    Abstract: 195u MT49H16M36
    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576mbmt49h64m9mt49h32m18mt49h16m36+409005aef80a41b46/source09005aef809f284bmicron bga part marking195u PDF

    MT49H16M18

    Contextual Info: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288mbmt49h8m36mt49h16m18mt49h32m9+3144-ball09005aef80a41b46/zip09005aef809f284b PDF

    smd transistor marking HT1

    Abstract: MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM
    Contextual Info: 576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576mbmt49h64m9mt49h32m18mt49h16m36+609005aef80a41b46/source09005aef809f284bsmd transistor marking ht1micron bga part markingmarking smd x9rldram PDF

    smd code marking x18

    Abstract: MT49H16M36
    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576mbmt49h64m9mt49h32m18mt49h16m36+309005aef80a41b46/source09005aef809f284bsmd code marking x18 PDF

    MT49H16M18

    Contextual Info: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288mbmt49h8m36mt49h16m18 PDF

    MT49H16M18

    Contextual Info: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288mbmt49h8m36mt49h16m18 PDF

    MT49H16M18

    Contextual Info: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		288mb09005aef809f284bmt49h8m36mt49h16m18 PDF

    MICRON BGA PART MARKING

    Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
    Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		288mbmt49h32m9mt49h16m18mt49h8m36+709005aef80a41b59/source09005aef809f284bmicron bga part markingsmd transistor marking ht1a191a201rldram mt49h PDF

    MICRON BGA PART MARKING

    Abstract: RLDRAM 09005aef809f284b MT49H16M36
    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576mbmt49h64m9mt49h32m18mt49h16m36+409005aef80a41b46/source09005aef809f284bmicron bga part markingrldram PDF

    09005aef809f284b

    Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9


    Original     		288mbmt49h8m36mt49h16m18mt49h32m9+209005aef80a41b46/source09005aef809f284b PDF

    MT49H16M36

    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576mbmt49h64m9mt49h32m18mt49h16m36+209005aef80a41b46/source09005aef809f284b PDF

    transistor SMD DKL

    Abstract: BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c
    Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		288mbmt49h8m36mt49h16m18mt49h32m9+1209005aef80a41b46/source09005aef809f284btransistor smd dklba5 markingmarking smd x9micron ddr marking h12smd coda22 smd marking codea53 smd marking codemarking baxmarking code a02 smd transistormarking d1c PDF

    MICRON BGA PART MARKING

    Abstract: MT49H16M36
    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		576mbmt49h64m9mt49h32m18mt49h16m36+309005aef80a41b46/source09005aef809f284bmicron bga part marking PDF