BA1S Search Results

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

ba1s

Abstract: QS500 BD7 274 FP 801 CRC-16 DS5001FP DS5002FP dallas nvram cmos
Contextual Info: Bi b4E » DALLAS 2bl4130 0 0 0 7 ^ 2 SEMI CONDUCT OR S3b « D A L DS5001FP CORP DALLAS SEMICONDUCTOR DS5001FP 128K Soft Micro Chip FEATURES PIN ASSIGNM ENT • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM In-system programming via on-chip serial port

46LR32640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: Fast recovery silicon diodes. 1 Amp. to 1.5 Amps. The plastic material carries U/L recognition 94V-0. TY PE Axial Lead | S.M .D. Maximum Average Forward Rectified Current I fca v Ta A) I ( °C) Max. Recurrent Reverse Voltage V rrm (V) Repetitive Peak Forward

46LR16640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR32640A

Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
Contextual Info: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

104 k5k capacitor

Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
Contextual Info: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4

KM28U800

Abstract: ba1g KM28U800-T
Contextual Info: Preliminary FLASH MEMORY KM28U800-T/B 8M Bit 1M X8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V tor Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90 ns

Telemecanique LIMIT SWITCH XCK-J

Abstract: Telemecanique LIMIT SWITCH NFC 63-140 Telemecanique LIMIT SWITCH nfc 63-145 y2 XCK-J EN 60947-5-1 XCM NFC 63-145 y2 Telemecanique LIMIT SWITCH XCK-J 59 Telemecanique LIMIT SWITCH XCK-p Telemecanique LIMIT SWITCH XCK-J IEC 337-1 NFC 63 telemecanique xck-p IEC 60947-5-1 xck-j
Contextual Info: Farnell Codes 423 2884-2902 425 3711-3723 Table of Contents 425 3772-3784 Section 19 425 3814-4557 Limit Switches 425 4569-4594 Current Ratings and Application Data 9007C 19-2 Heavy Duty Industrial Limit Switches Class 9007 Type C oiltight, watertight switches, compact and reed

an 7073

Abstract: clb25 CX1-B0-14-810-32A-10C CA2-B0-34 magnetic switch 1480 BA 5991 AA1-BO-34-625-3B1-C CA2-B0
Contextual Info: 1279-2012.qxp:QuarkCatalogTempNew 8/31/12 9:51 AM Page 1279 14 Circuit Breakers and Thermal Circuit Protectors RoHS RoHS Carling Technologies offers a full line of highly efficient hydraulic/magnetic circuit breakers that guarantee maximum protection. CS Series circuit breakers are ideal for integration into renewable energy

Contextual Info: IS43/46LR32200B Preliminary Information 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

Contextual Info: IS43/46LR16160F Advanced Information 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

ba1s

Abstract: GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
Contextual Info: BIPOLARICS, INC. Part Number BA1 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: DESCRIPTION AND APPLICATIONS: Bipolarics' BA1 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a

Contextual Info: IS43/46LR16160F 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

fagor fbu4 bridge rectifier

Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
Contextual Info: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1

RGP15T

Abstract: RGP30T RGP10t rgp10s
Contextual Info: FAGOR ^ G lass The plastic material carries U L recognition 94V-0. Peak Average Rectified Inverse Current Voltage Type VR R M at T a ^ ',v A (°C) (V) Surge Repetitive Peak Forward Forward Current Current VF at Wi r (A) Max. Forward Voltage Drop at Ta = 25°C

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

Contextual Info: I S43/ 46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

IS46LR16320B

Contextual Info: IS43LR16320B, IS46LR16320B Advanced Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

IS46LR16400B-6BLA2

Contextual Info: IS43/46LR16400B Preliminary Information 1M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16400B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

4PR24

Abstract: GCR1440
Contextual Info: Cable Solutions FOR THE INDUSTRIAL AUTOMATION MARKET • Industrial Ethernet • Industrial Communication Protocols • Instrumentation and Control • Portable Power and Cord • Variable Frequency Drive Industrial Automation SERVING THE NEEDS OF THE INDUSTRIAL AUTOMATION MARKET

IS43LR16160F-6BL

Abstract: LPDDR2 2Gb Memory
Contextual Info: IS43/46LR16160F Preliminary Information 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted