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    GHZ MICRO-X PACKAGE Search Results

    GHZ MICRO-X PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    GHZ MICRO-X PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rf microwave amplifier with S Parameters

    Abstract: BA2 capacitor BA11 02238
    Text: BIPOLARICS, INC. Part Number BA2 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF

    ba7 transistor

    Abstract: MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
    Text: BIPOLARICS, INC. Part Number BA7 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.4 GHz in ceramic Micro-X - DC to 2.0 GHz in plastic packages • Suitable for 5V systems


    Original     		PDF OT-143 OT-143J ba7 transistor MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier

    MMIC Amplifier Micro-X

    Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
    Text: BIPOLARICS, INC. Part Number BA3 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF

    BA4 amplifier

    Abstract: ba4 RF amplifier
    Text: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    GHZ micro-X ceramic Package

    Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		PDF ATF-10736 ATF-10736 5965-8698E GHZ micro-X ceramic Package ATF-10736-STR ATF-10736-TR1 10736

    Untitled

    Abstract: No abstract text available
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		PDF ATF-10736 ATF-10736 5965-8698E

    1820 0944

    Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s


    Original     		PDF NE681 NE681 1820 0944 NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    transistor c 2499

    Abstract: No abstract text available
    Text: m AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor H EW LETT PACKARD Features • • • • 35 micro-X Package Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz 10.0 dB typical at 4.0 GHz


    OCR Scan     		PDF AT-41435 transistor c 2499

    Untitled

    Abstract: No abstract text available
    Text: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF ATF-26836

    Untitled

    Abstract: No abstract text available
    Text: MSA-0835, -0836 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD Features • • • • 35 micro-X Package1 Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz


    OCR Scan     		PDF MSA-0835, SA-0835

    ATF13136

    Abstract: No abstract text available
    Text: ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET WKS% LETT miXM HEW PACKARD 36 micro-X Package1 Features Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB at 12 GHz Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF ATF-13136 ATF13136

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical


    OCR Scan     		PDF AT-01635 ion202 310-371-8717or310-37l-847a

    TRANSISTOR 0835

    Abstract: AVANTEK MSA-0835 S2112 AVANTEK transistor
    Text: Q avan tek MSA-0835 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1 .0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz


    OCR Scan     		PDF MSA-0835 MSA-0835 TRANSISTOR 0835 AVANTEK S2112 AVANTEK transistor

    Untitled

    Abstract: No abstract text available
    Text: ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET Whp%H EW LETT mLtíM PACKARD 36 micro-X Package1 Features • • Low Noise Figure: 1.4 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB at 12 GHz


    OCR Scan     		PDF ATF-13336 peri10

    AT01635

    Abstract: AT-01635
    Text: WKSÏÏ HEW LETT 1"EM P A C K A R D AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features • • • • 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwidth Product: 7.0 GHz typical fr


    OCR Scan     		PDF AT-01635 AT01635

    Untitled

    Abstract: No abstract text available
    Text: a v a n te k MSA-0835 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz


    OCR Scan     		PDF MSA-0835 MSA-0835

    AT-42035

    Abstract: No abstract text available
    Text: That HEWLETT mL'KÆ PACKARD AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor 35 micro-X Package Features • • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression: 14.0 dB typical Gi dB at 2.0 GHz


    OCR Scan     		PDF AT-42035

    Untitled

    Abstract: No abstract text available
    Text: Features 35 micro-X Package1 Cascadable 50 LI Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB typical at 0.5 GHz • Low Noise Figure: 2.8 dB typical at 0.5 GHz • Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF MSA-0635, H447564 MSA-0635

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK I NC 20E D 0AVANTEK . • im n b b 000^441 T * >f= „ IB Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • 16.0 dBm typical Pi dBat 2.0 GHz 10.5 dB typical Gi dBat 2.0 GHz 2.5 dB typical NFo at 2.0 GHz


    OCR Scan     		PDF AT-00535

    avantek microwave

    Abstract: Avantek rf amplifier MSA-0335 Avantek, Inc. mmic s5 S478
    Text: AVANTEK MSA-0335 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • • GROUND Cascadable 50 Q. Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz


    OCR Scan     		PDF MSA-0335 MSA-0335 avantek microwave Avantek rf amplifier Avantek, Inc. mmic s5 S478

    MSA-0335

    Abstract: No abstract text available
    Text: m HEW LETT MSA-0335, -0336 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers PACKARD 35 micro-X Package1 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB typical Gain at 1.0 GHz •


    OCR Scan     		PDF MSA-0335, MSA-0335 fabric51

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK MSA-0335 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz


    OCR Scan     		PDF MSA-0335