32BITS Search Results

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV160B08SJ16-XX 8MB FLASH SIMM, based on AMD Am29LV160D BOTTOM BOOT DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV160B08SJ16-XX is a 3.3V SIMM organized as two banks of 1M X 32bits each. The module

Contextual Info: IS42VM32160D Advanced Information 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N32D3233LPAW 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3233LPAW are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

MA2180

Contextual Info: IS43/46LR32200B Advanced Information 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

Contextual Info: N32D3218LPAF2 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3218LPAF2 are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: IS42VM32200G 512K x 32Bits x 4Banks Low Power Synchronous DRAM Description These IS42VM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: N128D3233LPAW Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3233LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: cP IITSU July 1997 Revision 1.0 data sheet ESA8UN3242B- 50/60 (J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN3242B-(50/60)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA8UN3242B supports

Contextual Info: <p February 1997 Revision 1.1 HATA GHF FT - FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line m emory module (SIMM) package with JEDEC pinout. D M 4M 4N 320supports4K refresh.

HY5V52F

Contextual Info: Preliminary HY5V52 L F(P) Series 4Banks x 2M x 32bits Synchronous DRAM Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: cP IITSU July 1997 Revision 1.0 data sheet ESA4UN3242B- 50/60 (J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN3242B-(50/60)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA4UN3242B supports

IS42RM32400F-75BLI

Contextual Info: IS42RM32400F Preliminary Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are

un324

Contextual Info: <p June 1996 Revision 1.0 HATA fíH F F T - FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a72-pin, leadless, single-in-line memory module (SIMM) package with JEDEC pinout. DM4M4N 320 supports 4K refresh.

IS43LR32800F-6BLI

Abstract: IS46LR32800F-6BLA1 152-Ball LPD-D LPDDR2 PoP
Contextual Info: IS43/46LR32800F Preliminary Information 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR32160C

Abstract: Mobile DDR SDRAM IS43LR32160C
Contextual Info: IS43LR32160C, IS46LR32160C Preliminary Information 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

MB811

Contextual Info: July 1997 Revision 1.0 data sheet ESA2UN321 1/4 B-60(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321(1/4)B-60(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211B supports

1Mx4 EDO RAM

Abstract: ESA1UN3241A-60JS-S
Contextual Info: July 1997 Revision 1.0 data sheet ESA1UN3241A-60JS-S 4MByte 1M x 32 CMOS EDO DRAM Module General Description The ESA1UN3241A-60JS-S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

MB811

Contextual Info: February 1997 Revision 1.1 DATA SHEET FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package with JEDEC pinout. DM4M4N320 supports 4K refresh.

Contextual Info: I S43/ 46LR32400E 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: I S42SM32100C I S42RM32100C I S42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

46LR32100C

Abstract: Mobile DDR SDRAM 43LR32100C
Contextual Info: IS43LR32100C IS46LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

IS42SM32200K

Contextual Info: I S42SM/ RM/ VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/ RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

WPC8763L

Abstract: ATI M64-M QUANTA GD1 C3157 PCI8402 SAMSUNG GDDR3 quanta Neo c480 l3007 cps psi 100u 1p0
Contextual Info: 1 2 3 4 5 1 CPU MEROM GD1 Block Diagram 478 PIN micro FC-PGA P3,4 14.318MHz A A FSB 667 MHz(166X4) FSB 800 MHz(200X4) CLOCK GEN SVideo Out S-Video 32MVRAM 32bits P34 P10 S-Video LCD LVDS P7 CRT R/G/B 32bits P10 ICS9LPR363 P2 P11 LVDS 1299 Ball (micro FCBGA)

Contextual Info: HY5W2A2 L/S F / HY57W2A3220(L/S)T HY5W22F / HY57W283220T 4Banks x 1M x 32bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs