16MX32 Search Results

912b

Contextual Info: IS43/46R86400D IS43/46R16320D, IS43/46R32160D PRELIMINARY INFORMATION 16Mx32, 32Mx16, 64Mx8 SEPTEMBER 2010 512Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word

Contextual Info: WED3DL3216V White Electronic Designs 16Mx32 SDRAM Preliminary FEATURES DESCRIPTION n n n n n n The WED3DL3216V is an 16Mx32 Synchronous DRAM configured as 4x4Mx32. The SDRAM BGA is constructed with two 16Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 17mm

Contextual Info: SG532168574F63R November 11, 2005 Ordering Information Part Numbers Description SG532168574F63R 16Mx32 64MB , SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx8 Based, PC133, CL 3.0, 29.72mm, Green Module. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

IS43R86400D

Abstract: IS43R16320D-5BL IS43R32160D IS43R86400D-6TL
Contextual Info: IS43R86400D IS43/46R16320D, IS43/46R32160D ADVANCED INFORMATION 16Mx32, 32Mx16, 64Mx8 OCTOBER 2009 512Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word

45R16320D

Abstract: IS42S86400D IS42S16320D-7TLI IS42S16320D IS45S16320D-7CTLA1 is42s86400
Contextual Info: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 SEPTEMBER 2012 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

Contextual Info: K4S51323LC-MG/S CMOS SDRAM 16Mx32 Mobile SDRAM 90FBGA VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.1 Aug 2002 Rev. 1.2 Aug. 2002 K4S51323LC-MG/S CMOS SDRAM 4M x 32Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply

Contextual Info: DRAM MODULE KMM53216000AKG KMM53216000AKG Fast Page Mode 16Mx32 DRAM SIMM, 4K Refresh using 64M DRAM with 400mil G EN ER AL DESCRIPTIO N FEATURES The Samsung KMM53216000AKG is a 16M bit x 32 • Part Identification Dynamic RAM high density memory module. The

Contextual Info: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: •฀ •฀ •฀ •฀ ฀ ฀ ฀ •฀ ฀ •฀ •฀ •฀ Clock฀frequency:฀166,฀133฀MHz Fully฀synchronous฀operation Internal฀pipelined฀architecture Programmable฀Mode

IS43DR32160C

Contextual Info: IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM ADVANCED INFORMATION JULY 2012 FEATURES DESCRIPTION • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

smd w08 SOT23

Abstract: 32N03 MS-10422 L02 SOP8 SMD-3528 SOT23-6 T20 T04 p6 smd smd g1.l smd m3c micro-star
Contextual Info: 5 4 3 2 1 D D 10422: MXM-II, G3, 128/256MB, 128-bit, 8/16Mx32 DDR-3 LVDS,DVI_A, DVI_B,TV_OUT,VGA Table of Contents HISTORY: Page 1: Overview Page 2: PCI EXPRESS Interface Page 3: Frame Buffer A GPU Page 4: Frame Buffer A Memories Page 5: Frame Buffer C GPU

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY5DU113222FM

Contextual Info: HY5DU113222FM P 512M(16Mx32) GDDR SDRAM HY5DU113222FM(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

M53216

Abstract: 16Mx32-bit
Contextual Info: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification

Contextual Info: IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM FEATURES PRELIMINARY INFORMATION SEPTEMBER 2013 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle

LTRW

Contextual Info: KMM53216004BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216004BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.

64Mx4

Contextual Info: 16Mx32, 50 - 70ns, SIMM 30A173-11 2 M-Densus High Density Memory Device 512 Megabit CMOS 3.3V EDO DRAM 256 Megabit CMOS 3.3V EDO DRAM 128 Megabit CMOS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family

HY5S7B2ALFP

Abstract: RA12 HY5S7B2A
Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

KMM53216000BK

Abstract: KMM53216000BKG
Contextual Info: DRAM MODULE KMM53216000BK/BKG KMM53216000BK/BKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs

Contextual Info: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

R36100

Abstract: crt terminal interface block diagram serial controller 85c30 Centronics connector ethernet 85C30 schematic schematic sim Centronics connector drawing 85C30 DP83932 R4700
Contextual Info: R36100 EVALUATION AND DEVELOPMENT PLATFORM 79S361 Product Brief Integrated Device Technology, Inc. FEATURES • Dual serial ports through R36100 internal UART or 85C30 external UART • Provides for logic analyzer connection • Expansion connector allows all CPU signals to be

NT6SM32M16AG-S1

Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

SPRU035

Abstract: TMS320 TMS320C30 TMS320C31 nicolet TMS320C5x matrix multiplication Experiment Manual of TMS320C50 Programming the 80386
Contextual Info: TMS320C31 Embedded Control Technical Brief 1992 Digital Signal Processing Products SPRU083 TMS320C31 Embedded Control Technical Brief Literature Number SPRU083 February 1998 IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products or to

orion crt monitor circuit diagram

Abstract: IBM PC AT schematics IDT79R3041 R3051 pcb design lab manual Sonic DP83932 IDT79R3710 IDT79R37 HP16500A IBM PC schematics
Contextual Info: Evaluation Boards Integrated Device Technology, Inc. IDT 79S341 R3041 Evaluation Kit Standard Features Description ❏ Complete low-cost 20MHz RISC evaluation system for the R3041™ highlyintegrated, low-cost RISController ™ CPU The IDT79S341 Evaluation Kit is a complete kit for