8X13MM Search Results

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

C0603X7R500-102KNE

Abstract: C0805X7R160-105KNE how to test smd MOSFET with digital multimeter R101-R103 lug thermistor ntc lug p26 smd S4 SMD diode mark smd schottky diode s4 smd schottky diode s4 SOD-123
Contextual Info: ISL6308EVAL1: Three Phase Buck Converter with Integrated High Current 5-12V Drivers Application Note July 11, 2005 AN1199.0 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low

C49-C54

Abstract: 12V 10A voltage regulators 805 smd code capacitor ntc lug SMD capacitors CODES C0805COG500-101JNE R38-R42 transistor SMD p12 transistor SMD p23 BAV99TA-T
Contextual Info: ISL6310EVAL1Z: Two Phase Buck Converter with Integrated High Current 5V to 12V Drivers Application Note December 12, 2006 AN1197.1 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low

M12L64322A-5TG

Abstract: M12L64322A M12L64322A-6T M12L64322A-6TG M12L64322A-7T m12l64322a7tg
Contextual Info: ESMT M12L64322A Revision History Revision 0.1 Dec. 28 1998 -Original Revision 0.2(Jan. 29 1999) -Add page 45 "Packing Dimension" Revision 0.3(Apr. 20 2000) -Modify 6 tss from 2 to 1.5ns.(Page 7) Revision 0.4(May. 09 2001) - 64ms refresh period (4K cycle) -> 15.6 s refresh interval (P.1)

IS42S32160C

Abstract: 42S32160C is42s32160 IS42S32160C-75BLI
Contextual Info: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page

Contextual Info: IS42S32160A1 4M Words x 32 Bits x 4 Banks 512-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (4M x 32bit x 4bank) · Programmable Mode

16MX32

Abstract: IS42RM32160C
Contextual Info: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full

Contextual Info: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital

IS42S32800D-7BLI

Abstract: IS42S32800D IS42S32800D-7TLI IS42S32800D-6BL IS42S32800D-6TL IS42S32800D-7TL IS42S32800D-6TLI
Contextual Info: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION NOVEMBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)

Contextual Info: W9425G6EB 4 M x 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION. 4 2. FEATURES . 4

M53D128168A

Contextual Info: ESMT M53D128168A Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x 16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe DQS

Contextual Info: IS42S32800 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM P JANUARY 2008 FEATURES DESCRIPTION •฀ •฀ •฀ •฀ •฀ •฀ The ISSI IS42S32800 is a high-speed CMOS configured as a quad 2M x 32 DRAM with asynchronous interface (all signals are registered on the positive

29LV160

Contextual Info: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

29LV160

Abstract: 29lv160 Flash
Contextual Info: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

IS42VM32160C

Contextual Info: IS42VM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full

IS42S32800B-6BLI

Abstract: IS42S32800B IS42S32800B-6TLI
Contextual Info: ISSI IS42S32800B 2M Words x 32 Bits x 4 Banks 256-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank)

AN1211

Abstract: smd schottky diode s4 SOD-123 1211 transistor PDF DOWN LOAD c0805x7r500-223kne c1206x7r160 smd diode S7 R50 SOT23 SMD code P32 23 smd ntc lug p28 smd
Contextual Info: ISL8103EVAL1: Three Phase Buck Converter with Integrated High Current 5-12V Drivers Application Note January 3, 2006 AN1211.0 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low

is42s32160

Contextual Info: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page

Automotive Product Selector Guide

Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Contextual Info: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from

8X13

Contextual Info: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM (Rev 1.7 Oct./2007) Ordering Information Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode - CAS# Latency: 2 or 3

IS42S32800B-6BLI

Abstract: IS42S32800B-7BL is42S32800B-7B 2M Words x 32 Bits x 4 Banks (256-MBIT) IS42S32800B-6TI IS42S32800B-7BLI IS42S32800B-7TLI IS42S32800B
Contextual Info: ISSI IS42S32800B 2M Words x 32 Bits x 4 Banks 256-MBIT SYNCHRONOUS DYNAMIC RAM July 2006 FEATURES DESCRIPTION • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank)

Contextual Info: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM48AM3284LBB This is to notify our valuable customers that EOREX had launched its new version device for 16M*32 Mobile

IS42S32800B

Abstract: 42S32800B IS42S32800B-7BLI IS42S32800B-7B IS42S32800B-6BI IS42S32800B-6BLI IS42S32800B7BL IS42S32800B-6TI T17 07 IS42S32800B-7TLI
Contextual Info: IS42S32800B 2M Words x 32 Bits x 4 Banks 256-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank) · Programmable Mode