45VM32160D
Abstract: No abstract text available
Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42/45VM32160D
32Bits
IS42/45VM32160D
-40oC
16Mx32
IS42VM32160D-6BLI
IS42VM32160D-75BLI
90-ball
45VM32160D
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K4S643233H
Abstract: K4S643233H-F
Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
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K4S643233H
32Bit
90FBGA
K4S643233H-F
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K4S28323LF
Abstract: K4S28323LF-F
Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4S28323LF
32Bit
90FBGA
K4S28323LF-F
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GDDR
Abstract: K4D553238E-JC33 k4d553238e-jc40
Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.
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K4D553238E-JC
256Mbit
32Bit
144-Ball
K4D553238E-JC33/36
15tCK
14tCK
10tCK
GDDR
K4D553238E-JC33
k4d553238e-jc40
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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Untitled
Abstract: No abstract text available
Text: 32bit TX System RISC TX19 family TMP1942FDU/XBG Rev1.0 March 29, 2007 TMP1942FD 32-Bit RISC Microprocessor TX19 Family TMP1942FDU/FDXBG 1. Features The TX19 is a family of high-performance 32-bit microprocessors that offers the speed of a 32-bit RISC solution with the added advantage of a significantly reduced code size of a 16-bit architecture.
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32bit
TMP1942FDU/XBG
TMP1942FD
32-Bit
TMP1942FDU/FDXBG
32-bit
16-bit
R3000ATM
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TPS65381-Q1
Abstract: pin configuration of transistor d313 TPS65381 tms570 Interrupt m117 code d114 digital transistor airbag inductor
Text: TPS65381-Q1 www.ti.com SLVSBC4 – MAY 2012 Multi-Rail Power Supply for Microcontrollers in Safety-Critical Applications FEATURES 1 • 2 • • 1 2 Multi-Rail Power Supply Supporting Among Others: – Texas Instruments TMS570LS Series 16/32Bit RISC Flash Microcontroller
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TPS65381-Q1
TMS570LS
16/32Bit
TPS65381-Q1
pin configuration of transistor d313
TPS65381
tms570 Interrupt
m117 code
d114 digital transistor
airbag inductor
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SM32200K
Abstract: IS42SM32200K
Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42SM/RM/VM32200K
32Bits
IS42SM/RM/VM32200K
200K-6BLI
IS42SM32200K-75BLI
90-ball
-40oC
2Mx32
IS42RM32200K-6BLI
SM32200K
IS42SM32200K
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Untitled
Abstract: No abstract text available
Text: THCV218_Rev.1.00_E_Brief THCV218 V-by-One HS High-speed video data receiver General Description Features THCV218 is designed to support video data transmission between the host and display. One high-speed lane can carry up to 32bit data and 3 bits of synchronizing signals at a pixel clock
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THCV218
THCV218
32bit
20MHz
85MHz.
1080p/10b/60Hz.
24bit
32bit
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NT5DS4M32EF-25
Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
Text: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.
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NT5DS4M32EF
4Mx32
128Mbit
32Bit
144-Ball
144-Balla
NT5DS4M32EF-25
NT5DS4M32EF-28
NT5DS4M32EF-33
NT5DS4M32EF-4
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K4M283233H
Abstract: No abstract text available
Text: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4M283233H
32Bit
90FBGA
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LPC-H2129
Abstract: olimex LPC2129 ARM7TDMI-S programming LPC2129 ARM7TDMI-S lpc2129 pin arm lpc2129 programmer schematic arm pic 16 Programming Bootloader LPC2129 board MSP430
Text: LPC-H2129 HEADER BOARD FOR LPC2129 ARM7TDMI-S MICROCONTROLLER Features: • MCU: LPC2129 16/32 bit ARM7TDMI-S with 256K Bytes Program Flash, 16K Bytes RAM, RTC, 4x 10 bit ADC 2.44 uS, 2x UART, 2x CAN, I2C, SPI, 2x 32bit TIMERS, 7x CCR, 6x PWM, WDT, 5V tolerant I/O, up to 60MHz operation
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LPC-H2129
LPC2129
32bit
60MHz
800mA
RS232
10Mhz
7456Mhz
115Kbps
olimex
LPC2129 ARM7TDMI-S programming
LPC2129 ARM7TDMI-S
lpc2129 pin
arm lpc2129
programmer schematic arm
pic 16 Programming Bootloader
LPC2129 board
MSP430
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CS494001-CQ
Abstract: Pacific Microsonics IEC-61937 CS49400-CQ UHS-1 hdcd CS49300 CS494501-CQ 33k ohm resistor IEC61937 MLP
Text: CS49400 Audio Decoder & Programmable 32-bit DSP Family - Product Brief Features Multi-standard Audio Decoder The CS49400 DSP family integrates a programmable multi-channel audio decoder and a high performance 32bit audio processor with an audio optimized software
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CS49400
32-bit
CS49400
32bit
CS49300
DS536PB1
CS494001-CQ
Pacific Microsonics
IEC-61937
CS49400-CQ
UHS-1
hdcd
CS494501-CQ
33k ohm resistor
IEC61937 MLP
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Untitled
Abstract: No abstract text available
Text: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers
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H8S/2245
32bit
H8S/2000
16-bit
32-bit
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46LR32640A
Abstract: Mobile DDR SDRAM
Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR32640A
32Bits
IS43/46LR32640A
32-bit
IS43LR32640A-6BLI
90-ball
-40oC
64Mx32
IS46LR32640A-5BLA1
46LR32640A
Mobile DDR SDRAM
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4 Banks x 1m x 32Bit Synchronous DRAM
Abstract: No abstract text available
Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added
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HY57V283220
HY5V22
32Bit
133MHz
11x13
400mil
86pin
HY5V22F
4 Banks x 1m x 32Bit Synchronous DRAM
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Untitled
Abstract: No abstract text available
Text: N32D3225LPAW 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3225LPAW are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N32D3225LPAW
32Bits
N32D3225LPAW
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Untitled
Abstract: No abstract text available
Text: N128D3218LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N128D3218LPAF2
32Bits
N128D3218LPAF2
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Untitled
Abstract: No abstract text available
Text: IS42RM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are
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IS42RM32400F
32Bits
IS42RM32400F
90Ball
-25oC
4Mx32
IS42RM32400F-6BLE
IS42RM32400F-75BLE
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Untitled
Abstract: No abstract text available
Text: K4S643234E-SE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Extended Temperature 90-Ball FBGA Revision 1.8 April 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.8 April 2002
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K4S643234E-SE/N
32bit
90-Ball
2Mx32
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A45L9332A
Abstract: No abstract text available
Text: A45L9332A Series Preliminary 256K X 32 Bit X 2 Banks Synchronous Graphic RAM Document Title 256K X 32Bit X 2 Banks Synchronous Graphic RAM Revision History History Issue Date Remark 0.0 Initial issue August 21, 2001 Preliminary 0.1 Update AC and DC data specification
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A45L9332A
32Bit
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Q 2 72 t5
Abstract: Q 72 t5 T436432B T436432B-55SG T436432B-5S T436432B-5SG
Text: tm TE CH T436432B SDRAM 512K x 32bit x 4Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION 2M x 32 SDRAM • • • • • 3.3V power supply Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns Internal four banks operation LVTTL compatible with multiplexed address
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T436432B
32bit
400mil
Q 2 72 t5
Q 72 t5
T436432B
T436432B-55SG
T436432B-5S
T436432B-5SG
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intel CORE i3 instruction set
Abstract: intel packaging handbook 240800
Text: 80960JA/JF/JD/JT 3.3 V Embedded 32Bit Microprocessor Preliminary Datasheet Product Features • Pin/Code Compatible with all 80960Jx Processors ■ High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JA/JF lx the Bus Clock
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80960JA/JF/JD/JT
32Bit
80960Jx
80960JA/JF
80960JD
80960JT
32-Bit
80960JA
80960JF/JD
intel CORE i3 instruction set
intel packaging handbook 240800
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Untitled
Abstract: No abstract text available
Text: HY5W2A2 L/S F / HY57W2A3220(L/S)T HY5W22F / HY57W283220T 4Banks x 1M x 32bits Synchronous DRAM Revision History Revision No. History 0.3 Changed TA, PKG Drawing, Output Load Circuit 0.4 Changed Cin Value. 0.6 1. Added Operation Code in Mode Register 2. Changed Burst Stop in Full Page
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HY57W2A3220
HY5W22F
HY57W283220T
32bits
HY5W22CF
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