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GDDR

Abstract: K4D553238E-JC33 k4d553238e-jc40
Contextual Info: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.

P83C524

Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES

Contextual Info: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of

Contextual Info: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO.: VL41D5763B-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D5763B is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This single rank memory module consists

Contextual Info: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

Contextual Info: Product Specifications PART NO.: VL33B1K63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B1K63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO.: VL47B1G63A-K0-K9-F8-E7S-S1 REV: 1.0 General Information 8GB 1Gx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B1G63A is a 1Gx64 DDR3 SDRAM high density SODIMM. This memory module is dual rank, consists of

Contextual Info: Product Specifications PART NO.: VL41B5263A-K9S/F8S/E7S-S1 REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC SO-UDIMM 204 PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin MLF

Contextual Info: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO.: VL33B2K69F-K0/K9/F8S REV: 1.0 General Information 16GB 2Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B2K69F is a 2Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of eighteen stacked CMOS 1Gx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered

L9D3256M32SBG1

Contextual Info: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999

Contextual Info: Product Specifications PART NO.: VL51B5763F-K0/K9/F8/E7S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM ULP ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5763F is a 256Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is single rank, consists

Contextual Info: Product Specifications PART NO.: VL47D5763D-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5763D is a 256Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of

Contextual Info: Product Specifications PART NO.: VL33B2K60A-K9/F8S REV: 1.0 General Information 16GB 2Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B2K60A is a 2Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of thirty-six CMOS 1Gx4 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL

Contextual Info: MicroConverter , 12-Bit ADCs and DACs with Embedded 62 kBytes Flash MCU ADuC831 FEATURES ANALOG I/O 8-Channel, 247 kSPS 12-Bit ADC DC Performance: ؎1 LSB INL AC Performance: 71 dB SNR DMA Controller for High Speed ADC-to-RAM Capture 2 12-Bit Monotonic Voltage Output DACs

MICRON ddr3

Abstract: A-225 DDR3 1gb dimm
Contextual Info: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

M471B2874DZ1

Abstract: ddr3 udqs K4B1G0846D
Contextual Info: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb D-die 64-bit Non-ECC RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4J10324KE-HC1A

Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Contextual Info: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Unbuffered DIMM DDR3 SDRAM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb D-die 64/72-bit Non-ECC/ECC 82FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

tsop-ii 66 JEDEC TRAY

Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,