256MX8 Search Results

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

SSTL-15

Abstract: 204 pin so-DIMM DDR3 connector SSTL15 256Mx8 sstl_15 204Pin SODIMM ddr3 204 DDR3-1066 MODULE MEMORY DDR3 DDR3 Connector Specification
Contextual Info: Memory Product Specification DDR3-1066 SO-DIMM Description The Module is DDR3-1066 CL7 Small Outline Memory module. The Module density from 1GB to 4GB, it consists it consists 128M/256Mx8 bit DDR3-1066MHz Synchronous DRAMs in FBGA packages, Memory Module intented for mounting into 204-pin edge connector sockets.

Contextual Info: Product Specifications PART NO.: VL393T5263A-F7M REV: 1.0 General Information 4GB 512Mx72 DDR2 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL393T5263A is a 512Mx72 DDR2 SDRAM high density DIMM. This dual rank memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit registered buffer

HY27UF082G2A

Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

78 ball fbga

Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       

H5TQ2G63FFR-RDC

Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
Contextual Info: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC

Contextual Info: Product Specifications PART NO.: VL33B1K63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B1K63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: SG564568FG8NRUU May 30, 2006 Ordering Information Part Numbers Description Module Speed SG564568FG8NRDB 256Mx64 2GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based (Stacked - two 128Mx8), DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant).

Contextual Info: Product Specifications PART NO.: VL393T5263A-F7Y/E7Y/E6Y REV: 1.0 General Information 4GB 512Mx72 DDR2 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL393T5263A is a 512Mx72 DDR2 SDRAM high density DIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit registered buffers

Contextual Info: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V      

Contextual Info: SG572568DG8EWUU July 18, 2006 Ordering Information Part Numbers Description Module Speed SG572568DG8EWDB 256Mx72 2GB , DDR2, 200-pin SO-DIMM, Registered, ECC, 256Mx8 Based (Stacked- two 128Mx8), DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6

Contextual Info: SG572568FG8ERUU July 30, 2007 Ordering Information Part Numbers Description Module Speed SG572568FG8ERDB 256Mx72 2GB , DDR2, 200-pin SO-DIMM, Registered, ECC, 256Mx8 Based (Stacked - two 128Mx8), DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6

K/DDR31066-666

Contextual Info: SG564128FH8NZUU February 23, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8NZKA 512Mx64 4GB , DDR3, 204-pin Unbuffered SO-DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8NZ6B

Contextual Info: Product Specifications PART NO.: VL33B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B5263A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance: Speed Sort

HY27UG082

Contextual Info: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004

hy27uf082

Abstract: hy27uf082G
Contextual Info: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary

hy27uf082G

Contextual Info: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005

128MX16

Abstract: NT4GC64B8HB0NS-CG
Contextual Info: NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

srx 2039

Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

NT2GC72C89B2NF

Abstract: NT4GC72B8PB0NF-DI nanya 4GB udimm ddr3
Contextual Info: NT2GC72B89B0NF / NT4GC72B8PB0NF NT2GC72C89B0NF / NT4GC72C8PB0NF NT2GC72C89B2NF / NT4GC72C8PB2NF 2GB: 256M x 72 / 4GB: 512M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 256Mx8 SDRAM B-Die Features •Performance: Speed Sort

nanya 4GB udimm ddr3

Contextual Info: NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency