128MX16 Search Results

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

Contextual Info: MEMORY MODULE DDR2 SDRam 128Mx72-BGA 3D2D8G72UB3369 DDR2 Synchronous Dynamic Ram 8Gbit DDR2 SDRam organized as 128Mx72, based on 128Mx16 MODULE Pin Assignment Top View BGA 208 - (11x19 - Pitch 1.00mm) (TOP VIEW - VIEWED BY TRANSPARENCY) 11 10 9 8 7 6 5 4

3DSD2G16VS4364

Abstract: 3D-PLUS
Contextual Info: MEMORY MODULE SDRAM 128Mx16-SOP 3D SD2G16VS4364 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 128Mx16, based on 128Mx4 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Stack of four 512Mbit SDRam. - Organized as 128Mx16-bit. - Single +3.3 power supply.

HY27UF082G2A

Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

78 ball fbga

Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       

Contextual Info: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V      

hynix NAND ECC

Abstract: reset nand flash HYNIX hynix nand spare area hynix nand flash 2gb transistor Marking 1K32 63FBGA 256kb nand flash Hynix E NAND hynix nand PROGRAMMING
Contextual Info: Preliminary HY27UG162G5A Series 2Gbit 128Mx16bit NAND Flash 2Gb NAND FLASH HY27UG162G5A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: SG516288FG8NZUU May 31, 2006 Ordering Information Part Numbers Description Module Speed SG516288FG8NZDB 128Mx16 256MB , DDR2, 144-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR2-400-333, 31.75mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: FEDR36V02G54B-002-01 Issue Date: Oct. 01, 2008 MR36V02G54B 64M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 64Mx32 or 128Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply

Contextual Info: NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance: Speed Sort

HY27UG082

Contextual Info: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004

hy27uf082

Abstract: hy27uf082G
Contextual Info: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary

hy27uf082G

Contextual Info: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005

nanya 4GB udimm ddr3

Contextual Info: NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency

4GB 512MX64 DDR3 SDRAM MODULE

Abstract: nanya 4GB udimm ddr3
Contextual Info: NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency

nanya 4gb DDR3 DIMM

Abstract: 240 unbuffered DDR3 4GB 512MX64 DDR3 SDRAM MODULE NT4GC64B8HB0NF-BF 128mx16 ddr3 DDR3 DIMM PC3-10600 nanya 4GB udimm ddr3
Contextual Info: NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort PC3-8500

IS43DR82560B

Abstract: IS46DR16128B IS43DR16128B-25EBLI IS46DR16128B-3DBLA1 IS43DR16128B-25EBL
Contextual Info: IS43/46DR82560B IS43/46DR16128B 256Mx8, 128Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

Contextual Info: M2F1G64CBH4B5P/ M2F1G64CBH4B9P M2F X 2G64CB88B7N / M2F(X)2G64CB88BHN M2F(X)4G64CB8HB5N / M2F(X)4G64CB8HB9N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 (1GB) and DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die

Contextual Info: NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance: Speed Sort

Contextual Info: IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM PRELIMINARY INFORMATION OCTOBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V

Contextual Info: IS43/46DR82560B IS43/46DR16128B 256Mx8, 128Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

hy27uf082

Abstract: hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit HY27UF hynix nand flash 4Gb
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: SG516288FG8NWUU May 31, 2006 Ordering Information Part Numbers Description Module Speed SG516288FG8NWDB 128Mx16 256MB , DDR2, 144-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 31.75mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0