256MX8BIT Search Results

HY27UF082G2A

Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY27UG082

Contextual Info: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004

hy27uf082

Abstract: hy27uf082G
Contextual Info: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary

hy27uf082G

Contextual Info: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005

Contextual Info: 204PIN DDR3 1333 SO-DIMM JM1333KSN-2G 2048MB With 256Mx8 CL9 Description Placement The JM1333KSN-2G is a 256M x 64bits DDR3-1333 SO-DIMM. The JM1333KSN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 204PIN DDR3 1066Mhz SODIMM JM1066KSN-4G 4096MB With 256Mx8 CL7 Description Placement The JM1066KSN-4G is a 512M x 64bits DDR3-1066 SO-DIMM. The JM1066KSN-4G consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 240PIN DDR3 1333 ECC UDIMM TS512MLK72V3N 4096MB With 256Mx8 CL9 Description Placement The TS512MLK72V3N is a 512M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS512MLK72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

TS256MSK64V1N

Contextual Info: 204PIN DDR3 1066 SO-DIMM TS256MSK64V1N 2048MB With 256Mx8 CL7 Description Placement The TS256MSK64V1N is a 256M x 64bits DDR3-1066 SO-DIMM. The TS256MSK64V1N consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 204PIN DDR3 1333 SO-DIMM 4096MB With 256Mx8 CL9 TS512MSK64V3N Description Placement The TS512MSK64V3N is a 512M x 64bits DDR3-1333 SO-DIMM. The TS512MSK64V3N consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 204PIN DDR3 1333 SO-DIMM TS256MSK64V3N 2048MB With 256Mx8 CL9 Description Placement The TS256MSK64V3N is a 256M x 64bits DDR3-1333 SO-DIMM. The TS256MSK64V3N consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 240PIN DDR3 1600 UDIMM JM1600KLN-2G 2048MB With 256Mx8 CL11 Description Placement The JM1600KLN-2G is a 256M x 64bits DDR3-1600 unbuffered DIMM. The JM1600KLN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

hy27uf082g2b

Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
Contextual Info: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

hy27uf082

Abstract: hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit HY27UF hynix nand flash 4Gb
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 240PIN DDR3 1066 Registered DIMM TS1GKR72V1N 8GB With 256Mx8 CL7 Description Placement The TS1GKR72V1N is a 1G x 72bits DDR3-1066 Registered DIMM. The TS1GKR72V1N consists of 36pcs 256Mx8bits DDR3 SDRAM in FBGA package, 1 pcs register in 176 ball TFBGA package and a 2048 bits

Contextual Info: 240PIN DDR3 1333 Registered DIMM TS512MKR72V3N 4GB With 256Mx8 CL9 Description Placement The TS512MKR72V3N is a 512M x 72bits DDR3-1333 Registered DIMM. The TS512MKR72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages, 1 pcs register in 177 ball TFBGA package and a 2048 bits

TS512MSK64V3N-I

Contextual Info: 204PIN DDR3 1333 SO-DIMM TS512MSK64V3N-I 2Rank 4GB With 256Mx8 CL9 Description Placement The TS512MSK64V3N-I is a 512M x 64bits DDR3-1333 2Rank SO-DIMM. The TS512MSK64V3N-I consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit

TS256MKR72V3N

Contextual Info: 240PIN DDR3 1333 Registered DIMM TS256MKR72V3N 2048MB With 256Mx8 CL9 Description Placement The TS256MKR72V3N is a 256M x 72bits DDR3-1333 Registered DIMM. The TS256MKR72V3N consists of 9pcs 256Mx8bits DDR3 SDRAMs in FBGA packages, 1 pcs register in 176 ball TFBGA package and a 2048 bits

JM1600KSN-4G

Contextual Info: 204PIN DDR3 1600Mhz SODIMM JM1600KSN-4G 4096MB With 256Mx8 CL11 Description Placement The JM1600KSN-4G is a 512M x 64bits DDR3-1600 SO-DIMM. The JM1600KSN-4G consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.

Contextual Info: 240PIN DDR3 1333 UDIMM JM1333KLN-2G 2048MB With 256Mx8 CL9 Description Placement The JM1333KLN-2G is a 256M x 64bits DDR3-1333 unbuffered DIMM. The JM1333KLN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit

Contextual Info: 204PIN DDR3 1333 SO-DIMM TS256MSK64V3N-I 1Rank 2GB With 256Mx8 CL9 Description Placement The TS256MSK64V3N-I is a 256M x 64bits DDR3-1333 1Rank SO-DIMM. The TS256MSK64V3N-I consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit

Contextual Info: 240PIN DDR3 1333 Registered DIMM TS1GKR72V3N 8GB With 256Mx8 CL9 Description Placement The TS1GKR72V3N is a 1G x 72bits DDR3-1333 Registered DIMM. The TS1GKR72V3N consists of 36pcs 256Mx8bits DDR3 SDRAM in FBGA package, 1 pcs register in 176 ball TFBGA package and a 2048 bits

HY27UG082G2M

Contextual Info: HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004 Preliminary

Contextual Info: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004

HY27UG082G2M

Abstract: HY27UG hynix hy27 HY27 48-WSOP1
Contextual Info: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004