90BALL Search Results

H9ccnnn

Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
Contextual Info: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz

K4S643232E

Abstract: K4S643233E
Contextual Info: K4S643233E-SE N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.0V & 3.3V) Extended Temperature TSOP / 90Ball FBGA (V DD/V DDQ 3.0V/3.0V, 3.3V/3.3V) Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.

45VM32160D

Contextual Info: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42S32400D

Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Contextual Info: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

K4S643233H

Abstract: K4S643233H-F
Contextual Info: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,

K4S28323LF

Abstract: K4S28323LF-F
Contextual Info: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,

MT48LC4M32B2P

Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Contextual Info: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive

MT48LC2M32B2P

Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Contextual Info: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

IS61WV51232BLL-10BLI

Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
Contextual Info: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

MT48LC8M32LFB5

Abstract: D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48H8M32LF MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g
Contextual Info: 256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • •

Contextual Info: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft

SM32200K

Abstract: IS42SM32200K
Contextual Info: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42S32400

Abstract: 42S32400
Contextual Info: IS42S32400 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2010 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

micron lpddr

Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
Contextual Info: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

K4M283233H

Contextual Info: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,

EM48AM3284LBA

Abstract: EM48AM3284LBA-75F EM48AM3284LBA-75FE
Contextual Info: eorex EM48AM3284LBA 512Mb 4Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V +/- 0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

K4S283234F-M

Contextual Info: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V, VDDQ 2.5V Revision 0.1 November 2001 Rev. 0.1 Jan. 2002 K4S283234F-M CMOS SDRAM Revision History Revision 0.0 (Nov. 16. 2001, Final) • Final generation for 4Mx32 2.5V SDRAM FBGA. Revision 0.1 (Jan. 14. 2002, Final)

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007

w989d2kb

Abstract: smd 6ac
Contextual Info: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

A1833

Contextual Info: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4